IR21091PBF [INFINEON]

HALF-BRIDGE DRIVER; 半桥驱动器
IR21091PBF
型号: IR21091PBF
厂家: Infineon    Infineon
描述:

HALF-BRIDGE DRIVER
半桥驱动器

驱动器 MOSFET驱动器 驱动程序和接口 接口集成电路 光电二极管
文件: 总8页 (文件大小:110K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet No. PD60191 revD  
( ) & (PbF)  
S
IR21091  
HALF-BRIDGE DRIVER  
Product Summary  
Features  
Floating channel designed for bootstrap operation  
V
600V max.  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
OFFSET  
I +/-  
120 mA / 250 mA  
10 - 20V  
O
Gate drive supply range from 10 to 20V  
Undervoltage lockout for both channels  
3.3V, 5V and 15V input logic compatible  
Cross-conduction prevention logic  
Matched propagation delay for both channels  
High side output in phase with IN input  
Logic and power ground +/- 5V offset.  
Internal 500ns dead-time, and programmable  
V
OUT  
ton/off (typ.)  
Dead time  
680 & 170 ns  
500 ns  
(programmable up to 5uS)  
up to 5us with one external R resistor  
DT  
Lower di/dt gate driver for better noise immunity  
The dual function DT/SD pin input turns off both  
channels.  
Packages  
Available in Lead-Free  
Description  
The IR21091(S) are high voltage, high speed power  
MOSFET and IGBT drivers with dependant high and  
low side referenced output channels.Proprietary HVIC  
and latch immune CMOS technologies enable rugge-  
8 Lead SOIC  
8 Lead PDIP  
dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to  
3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-  
conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high  
side configuration which operates up to 600 volts.  
Typical Connection  
up to 600V  
VCC  
VCC  
VB  
HO  
VS  
IN  
IN  
TO  
LOAD  
SD  
DT/SD  
COM  
LO  
IR21091(S)  
(Refer to Lead Assignments for correct configuration).This/These diagram(s) show electrical connections  
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1
( ) & (PbF)  
S
IR21091  
Absolute Maximum Ratings  
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-  
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions.  
Symbol  
Definition  
High side floating absolute voltage  
High side floating supply offset voltage  
High side floating output voltage  
Low side and logic fixed supply voltage  
Low side output voltage  
Min.  
Max.  
Units  
V
V
-0.3  
625  
B
S
V
B
- 25  
V
B
V
B
+ 0.3  
+ 0.3  
25  
V
HO  
V
CC  
V
S
- 0.3  
-0.3  
-0.3  
V
V
LO  
V
V
V
+ 0.3  
+ 0.3  
+ 0.3  
CC  
CC  
CC  
DT/SD  
Programmable dead-time and shut-down pin voltage  
Logic input voltage  
V
- 0.3  
SS  
SS  
V
IN  
V
- 0.3  
dV /dt  
Allowable offset supply voltage transient  
50  
V/ns  
W
S
P
Package power dissipation @ T +25°C (8 Lead PDIP)  
-50  
1.0  
0.625  
125  
200  
150  
150  
300  
D
A
(8 Lead SOIC)  
Rth  
Thermal resistance, junction to ambient  
(8 Lead PDIP)  
(8 Lead SOIC)  
JA  
°C/W  
°C  
T
T
Junction temperature  
J
Storage temperature  
S
T
L
Lead temperature (soldering, 10 seconds)  
Recommended Operating Conditions  
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the  
recommended conditions. The V offset rating are tested with all supplies biased at 15V differential.  
S
Symbol  
Definition  
High side floating supply absolute voltage  
High side floating supply offset voltage  
High side floating output voltage  
Min.  
Max.  
Units  
VB  
V
+ 10  
V + 20  
S
S
V
Note 1  
600  
S
V
HO  
V
V
B
S
V
Low side and logic fixed supply voltage  
10  
0
20  
CC  
V
V
Low side output voltage  
V
LO  
CC  
CC  
CC  
V
Logic input voltage  
V
V
V
IN  
SS  
SS  
DT/SD  
Programmable dead-time and shut-down pin voltage  
Ambient temperature  
V
T
A
-40  
125  
°C  
Note 1: Logic operational for V of -5 to +600V. Logic state held for V of -5V to -V (Please refer to the Design Tip  
BS.  
S
S
DT97-3 for more details).  
2
www.irf.com  
( ) & (PbF)  
S
IR21091  
Dynamic Electrical Characteristics  
V (V , V ) = 15V, C = 1000 pF, T = 25°C, DT = VSS unless otherwise specified.  
BIAS CC BS L A  
Symbol  
Definition  
Min. Typ. Max. Units Test Conditions  
t
Turn-on propagation delay  
750  
200  
0
950  
280  
70  
V = 0V  
S
on  
off  
t
Turn-off propagation delay  
V
S
= 0V or 600V  
MT  
Delay matching, HS & LS turn-on/off  
Turn-on rise time  
t
150  
50  
220  
80  
V
V
= 0V  
= 0V  
nsec  
r
S
t
Turn-off fall time  
f
S
DT  
Deadtime: LO turn-off to HO turn-on(DT  
400  
4
540  
5
680  
6
RDT= 0  
LO-HO) &  
HO turn-off to LO turn-on (DT  
usec  
nsec  
RDT = 200k  
HO-LO)  
MDT  
tsd  
Deadtime matching = DT  
- DT  
0
0
60  
RDT=0  
LO - HO  
HO-LO  
600  
RDT = 200k  
Shut down propagation delay  
215  
615  
Static Electrical Characteristics  
V
(V , V ) = 15V, DT= V  
CC BS  
and T = 25°C unless otherwise specified. The V , V and I parameters are  
SS A IL IH IN  
BIAS  
referenced to V /COM and are applicable to the respective input leads: IN and DT. The V , I and Ron parameters are  
SS  
O O  
referenced to COM and are applicable to the respective output leads: HO and LO.  
Symbol  
Definition  
Min. Typ. Max. Units Test Conditions  
V
Logic “1” input voltage for HO & logic “0” for LO  
2.9  
0.8  
14.5  
1.4  
0.6  
50  
V
= 10V to 20V  
IH  
CC  
CC  
V
Logic “0” input voltage for HO & logic “1” for LO  
V
= 10V to 20V  
IL  
V
11.5  
13  
0.8  
0.3  
SD,TH  
DT/SD pin shutdown input threshold  
V
V
OH  
High level output voltage, V  
- V  
I
I
= 20 mA  
= 20 mA  
BIAS  
O
O
O
V
OL  
Low level output voltage, V  
O
I
LK  
Offset supply leakage current  
Quiescent V supply current  
V
= V = 600V  
B
S
µA  
I
20  
60  
1.0  
150  
1.6  
V
= 0V or 5V  
= 0V or 5V  
QBS  
QCC  
BS  
IN  
IN  
I
Quiescent V  
supply current  
0.4  
mA  
V
CC  
RDT = 0  
I
Logic “1” input bias current  
Logic “0” input bias current  
5
1
20  
2
IN = 5V, SD = 0V  
IN = 0V, SD = 5V  
IN+  
µA  
V
I
IN-  
V
V
and V supply undervoltage positive going  
8.0  
8.9  
9.8  
CCUV+  
CC  
BS  
V
threshold  
BSUV+  
V
V
and V supply undervoltage negative going  
7.4  
0.3  
8.2  
0.7  
9.0  
CCUV-  
CC  
BS  
V
threshold  
BSUV-  
V
Hysteresis  
CCUVH  
V
BSUVH  
I
Output high short circuit pulsed vurrent  
Output low short circuit pulsed current  
120  
250  
200  
350  
V
= 0V, PW 10 µs  
=15V,PW 10 µs  
O+  
O
mA  
I
V
O
O-  
www.irf.com  
3
( ) & (PbF)  
S
IR21091  
Functional Block Diagrams  
VB  
UV  
DETECT  
IR21091(S)  
HO  
R
R
Q
PULSE  
FILTER  
HV  
LEVEL  
S
SHIFTER  
VSS/COM  
LEVEL  
SHIFT  
IN  
VS  
PULSE  
GENERATOR  
VCC  
LO  
DEADTIME  
DT/SD  
UV  
DETECT  
VSS/COM  
LEVEL  
SHIFT  
DELAY  
COM  
4
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( ) & (PbF)  
S
IR21091  
Lead Definitions  
Symbol Description  
IN  
Logic input for high and low side gate driver outputs (HO and LO), in phase with HO  
DT/SD  
Programmable dead-time lead, referenced to VSS. Disables input/output logic when tied to VCC  
V
High side floating supply  
High side gate drive output  
High side floating supply return  
Low side and logic fixed supply  
Low side gate drive output  
Low side return  
B
HO  
V
V
S
CC  
LO  
COM  
Lead Assignments  
V
V
1
2
3
4
V
1
2
3
4
B
8
7
B
8
V
CC  
CC  
HO  
HO  
IN  
7
6
5
IN  
V
S
V
S
DT/SD  
COM  
6
5
DT/SD  
COM  
LO  
LO  
8 Lead PDIP  
8 Lead SOIC  
IR21091  
IR21091(S)  
www.irf.com  
5
( ) & (PbF)  
S
IR21091  
Case Outlines  
01-6014  
01-3003 01 (MS-001AB)  
8 Lead PDIP  
INCHES  
MILLIMETERS  
DIM  
A
D
B
MIN  
.0532  
MAX  
.0688  
.0098  
.020  
MIN  
1.35  
0.10  
0.33  
0.19  
4.80  
3.80  
MAX  
1.75  
0.25  
0.51  
0.25  
5.00  
4.00  
FOOTPRINT  
8X 0.72 [.028]  
5
A
A1 .0040  
b
c
.013  
.0075  
.189  
.0098  
.1968  
.1574  
8
1
7
2
6
3
5
6
D
E
e
H
E
.1497  
0.25 [.010]  
A
.050 BASIC  
1.27 BASIC  
6.46 [.255]  
4
e 1 .025 BASIC  
0.635 BASIC  
H
K
L
y
.2284  
.0099  
.016  
0°  
.2440  
.0196  
.050  
8°  
5.80  
0.25  
0.40  
0°  
6.20  
0.50  
1.27  
8°  
3X 1.27 [.050]  
e
6X  
8X 1.78 [.070]  
e1  
K x 45°  
A
C
y
0.10 [.004]  
8X c  
8X L  
A1  
B
8X b  
7
0.25 [.010]  
C A  
NOT ES :  
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .  
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].  
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.  
2. CONTROLLING DIMENSION: MILLIMETER  
DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .  
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].  
3. DIMENS IONS ARE S HOWN IN MILLIME TE RS [INCHES ].  
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.  
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO  
A SUBSTRATE.  
01-6027  
01-0021 11 (MS-012AA)  
8 Lead SOIC  
6
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( ) & (PbF)  
S
IR21091  
IN(LO)  
IN  
50%  
50%  
t
IN(HO)  
t
DT/SD  
t
t
f
on  
off  
r
HO  
LO  
90%  
90%  
LO  
HO  
10%  
10%  
Figure 2. Switching Time Waveform Definitions  
Figure 1. Input/Output Timing Diagram  
50%  
50%  
50%  
tsd  
IN  
DT/SD  
90%  
90%  
HO  
LO  
DT  
10%  
HO  
LO  
LO-HO  
DT  
HO-LO  
10%  
90%  
Figure 3. Shutdown Waveform Definitions  
MDT=  
DT  
- DT  
LO-HO  
HO-LO  
Figure 4. Deadtime Waveform Definitions  
IN(LO)  
50%  
50%  
IN(HO)  
LO  
HO  
10%  
MT  
MT  
90%  
LO  
HO  
Figure 5. Delay Matching Waveform Definitions  
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7
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IR21091  
Basic Part (Non-Lead Free)  
Lead-Free Part  
8-Lead PDIP IR21091 order IR21091  
8-Lead SOIC IR21091S order IR21091S  
8-Lead PDIP IR21091 order IR21091PBF  
8-Lead SOIC IR21091S order IR21091SPBF  
This product has been designed and qualified for the Industrial market.  
Qualification Standards can be found on IR’s Website.  
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 7/19/2005  
8
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