IR2131PBF [INFINEON]
暂无描述;
| 型号： | IR2131PBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 驱动器 MOSFET驱动器 驱动程序和接口 接口集成电路 光电二极管 信息通信管理 |
| 文件： | 总8页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Previous Datasheet
Index
Next Data Sheet
Data Sheet No. PD-6.032C
IR2131
3 HIGH SIDE AND 3 LOW SIDE DRIVER
Features
Product Summary
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for all channels
n Over-current shutdown turns off all six drivers
n Independent 3 high side & 3 low side drivers
n Matched propagation delay for all channels
n Outputs out of phase with inputs
V
600V max.
200 mA / 420 mA
10 - 20V
OFFSET
I +/-
O
V
OUT
t
(typ.)
1.3 & 0.6 µs
700 ns
on/off
Deadtime (typ.)
Packages
Description
The IR2131 is a high voltage, high speed power
MOSFET and IGBT driver with three independent high
and low side referenced output channels. Proprietary
HVIC technology enables ruggedized monolithic
construction. Logic inputs are compatible with 5V
CMOS or LSTTL outputs. A current trip function which
terminates all six outputs can be derived from an
external current sense resistor. A shutdown input is
provided for a customized shutdown function. An open
drain FAULT signal is provided to indicate that any of
the shutdowns has occurred. The output drivers
feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays
are matched to simplify use in high frequency
applications. The floating channels can be used to
drive N-channel power MOSFETs or IGBTs in the high
side configuration which operate up to 600 volts.
Typical Connection
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
B-157
To Order
Previous Datasheet
Index
Next Data Sheet
IR2131
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions. Additional Information is shown in Figures 7 through 10.
Parameter
Definition
Value
Symbol
Min.
Max.
Units
V
V
High Side Floating Supply Voltage
High Side Floating Offset Voltage
High Side Floating Output Voltage
Low Side and Logic Fixed Supply Voltage
Logic Ground
-0.3
525
B1,2,3
S1,2,3
V
- 25
V
+ 0.3
B1,2,3
B1,2,3
V
V
- 0.3
V
+ 0.3
B1,2,3
HO1,2,3
S1,2,3
V
-0.3
25
+ 0.3
CC
V
V
V
- 25
V
V
V
V
SS
CC
CC
CC
CC
CC
V
Low Side Output Voltage
-0.3
+ 0.3
+ 0.3
+ 0.3
LO1,2,3
V
Logic Input Voltage (HIN1,2,3 ,LIN1,2,3,FLT -CLR,SD &ITRIP)
FAULT Output Voltage
V
V
- 0.3
- 0.3
IN
SS
SS
V
FLT
dV /dt
Allowable Offset Supply Voltage Transient
—
50
V/ns
W
S
P
D
Package Power Dissipation @ T ≤ +25°C
(28 Lead DIP)
(28 Lead SOIC)
(44 Lead PLCC)
(28 Lead DIP)
—
—
—
—
—
—
—
-55
—
1.5
1.6
2.0
83
A
R
Thermal Resistance, Junction to Ambient
θJA
(28 Lead SOIC)
(44 Lead PLCC)
78
°C/W
°C
63
T
J
Junction Temperature
150
150
300
T
S
Storage Temperature
T
Lead Temperature (Soldering, 10 seconds)
L
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to COM. The V offset rating is
S
tested with all supplies biased at 15V differential.
Parameter
Definition
High Side Floating Supply Voltage
High Side Floating Offset Voltage
High Side Floating Output Voltage
Low Side and Logic Fixed Supply Voltage
Logic Ground
Value
Symbol
Min.
Max.
Units
V
V
V
V
+ 10
V
+ 20
S1,2,3
B1,2,3
S1,2,3
S1,2,3
Note 1
600
V
V
V
B1,2,3
HO1,2,3
S1,2,3
V
CC
10
20
V
-5
0
5
SS
LO1,2,3
V
Low Side Output Voltage
V
CC
HIN1,2,3 LIN1,2,3
V
Logic Input Voltage (
,
,FLT -CLR, SD &ITRIP)
V
V
V
+ 5
SS
IN
SS
SS
V
FAULT Output Voltage
V
CC
FLT
T
A
Ambient Temperature
-40
125
°C
Note 1: Logic operational for V of -5V to +600V. Logic state held for V of -5V to -V
.
S
S
BS
B-158 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
To Order
Previous Datasheet
Index
Next Data Sheet
IR2131
Dynamic Electrical Characteristics
V
(V , V
CC BS1,2,3
) = 15V, V
= V
= COM, C = 1000 pF and T = 25°C unless otherwise specified. The
SS L A
BIAS
S1,2,3
dynamic electrical characteristics are defined in Figures 4 through 5.
Parameter
Definition
Value
Min. Typ. Max. Units Test Conditions
Symbol
t
Turn-On Propagation Delay
Turn-Off Propagation Delay
Turn-On Rise Time
0.6
0.2
—
1.3
0.6
80
2.0
1.0
on
µs
ns
t
V
= 0 & 5V
off
IN
t
150
100
V
= 0 to 600V
S1,2,3
r
t
Turn-Off Fall Time
—
40
f
t
ITRIP to Output Shutdown Propagation Delay
ITRIP Blanking Time
400
—
700 1000
400
700 1000
310
V
, V
IN ITRIP
= 0 & 5V
= 1V
itrip
t
—
V
ITRIP
bl
t
ITRIP to FAULT Indication Delay
Input Filter Time (All Six Inputs)
FLT -CLR to FAULT Clear Time
SD to Output Shutdown Propagation Delay
Deadtime
400
—
V , V = 0 & 5V
IN ITRIP
flt
t
—
V
= 0 & 5V
flt,in
IN
t
400
400
400
700 1000
700 1000
700 1200
V , V , V = 0&5V
IN IT FC
fltclr
t
V , V = 0 & 5V
IN SD
sd
DT
V
= 0 & 5V
IN
Static Electrical Characteristics
V
(V , V
BIAS CC BS1,2,3
) = 15V, V
= V = COM and T = 25°C unless otherwise specified.The V , V and I
S1,2,3 SS A IN TH IN
parameters are referenced to V and are applicable to all six logic input leads: HIN1,2,3 & LIN1,2,3. The V and I
O
SS
O
parameters are referenced to COM and V
and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
S1,2,3
Parameter
Value
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V
Logic “0” Input Voltage (OUT = LO)
Logic “1” Input Voltage (OUT = HI)
Logic “0” Fault Clear Input Voltage
Logic “1” Fault Clear Input Voltage
Shutdown Input Positive Going Threshold
Shutdown Input Negative Going Threshold
ITRIP Input Positive Going Threshold
ITRIP Input Negative Going Threshold
2.2
—
—
—
—
IH
V
0.8
IL
FCLR,IH
V
2.2
—
—
—
V
V
—
0.8
FCLR,IL
V
1.2
0.9
250
200
—
1.8
1.5
485
400
—
2.1
SD,TH+
V
1.8
SD,TH-
V
600
550
100
100
50
IT,TH+
V
IT,TH-
mV
V
OH
High Level Output Voltage, V
- VO
V
V
= 0V, I = 0A
O
BIAS
IN
IN
V
Low Level Output Voltage, VO
Offset Supply Leakage Current
—
—
= 5V, I = 0A
O
OL
LK
I
—
—
V = V = 600V
B S
µA
I
Quiescent V Supply Current
—
30
3.0
190
50
75
—
100
4.5
V
= 0V or 5V
= 0V or 5V
QBS
BS
IN
IN
I
Quiescent V Supply Current
—
mA
V
QCC
CC
I
Logic “1” Input Bias Current (OUT = HI)
Logic “0” Input Bias Current (OUT = LO)
“High” ITRIP Bias Current
—
300
100
150
100
250
150
150
100
V
= 0V
= 5V
IN+
IN
IN
I
IN-
—
µA
nA
µA
nA
V
I
—
ITRIP = 5V
ITRIP = 0V
ITRIP+
I
“Low” ITRIP Bias Current
—
ITRIP-
I
Logic “1” Fault Clear Bias Current
Logic “0” Fault Clear Bias Current
Logic “1” Shutdown Bias Current
Logic “0” Shutdown Bias Current
—
125
75
75
—
FLT -CLR = 0V
FLT -CLR = 5V
SD = 5V
FCLR+
I
—
FCLR-
I
—
SD+
I
—
SD = 0V
SD-
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-159
To Order
Previous Datasheet
Index
Next Data Sheet
IR2131
Static Electrical Characteristics -- Continued
V
(V , V
BIAS CC BS1,2,3
) = 15V, V
= V = COM and T = 25°C unless otherwise specified.The V , V and I
S1,2,3 SS A IN TH IN
parameters are referenced to V and are applicable to all six logic input leads: HIN1,2,3 & LIN1,2,3 . The V and I
SS
O
O
parameters are referenced to COM and V
and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
S1,2,3
Parameter
Value
Symbol
Definition
Min. Typ. Max. Units Test Conditions
V
V
Supply Undervoltage Positive Going
BS
8.2
7.8
8.2
7.8
8.7
8.3
8.7
8.3
9.2
8.8
9.2
8.8
BSUV+
Threshold
V Supply Undervoltage Negative Going
BS
Threshold
V Supply Undervoltage Positive Going
CC
Threshold
V Supply Undervoltage Negative Going
CC
Threshold
V
BSUV-
V
V
CCUV+
V
R
CCUV-
FAULT Low On-Resistance
Output High Short Circuit Pulsed Current
—
55
75
—
Ω
on,FLT
I
O+
200
250
V = 0V, V = 0V
O IN
PW ≤ 10 µs
mA
I
O-
Output Low Short Circuit Pulsed Current
420
500
—
V
O
= 15V, V = 5V
IN
PW ≤ 10 µs
Lead Assignments
28 Lead DIP
44 Lead PLCC w/o 12 Leads
IR2131J
28 Lead SOIC (Wide Body)
IR2131
IR2131S
Part Number
B-160 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
To Order
Previous Datasheet
Index
Next Data Sheet
IR2131
Functional Block Diagram
Lead Definitions
Lead
Symbol Description
Logic inputs for high side gate driver outputs (HO1,2,3), out of phase
Logic inputs for low side gate driver output (LO1,2,3), out of phase
Logic input for fault clear
HIN1,2,3
LIN1,2,3
FLT - CLR
SD
Logic input for shutdown
Indicates over-current or undervoltage lockout (low side) has occurred, negative logic
Low side and logic fixed supply
Input for over-current shutdown
Logic ground
FAULT
V
CC
ITRIP
V
V
SS
High side floating supplies
B1,2,3
HO1,2,3
High side gate drive outputs
V
High side floating supply returns
Low side gate drive outputs
S1,2,3
LO1,2,3
COM
Low side return
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-161
To Order
Previous Datasheet
Index
Next Data Sheet
IR2131
Device Information
Process & Design Rule
Transistor Count
Die Size
HVDCMOS 4.0 µm
700
167 X 141 X 26 (mil)
Die Outline
Thickness of Gate Oxide
800Å
Connections
First
Material
Width
Poly Silicon
4 µm
Layer
Spacing
Thickness
Material
Width
Spacing
Thickness
6 µm
5000Å
Al - Si (Si: 1.0% ±0.1%)
Second
Layer
6 µm
9 µm
20,000Å
8 µm X 8 µm
PSG (SiO2)
Contact Hole Dimension
Insulation Layer
Material
Thickness
Material
1.5 µm
PSG (SiO2)
Passivation
Thickness
1.5 µm
Method of Saw
Method of Die Bond
Wire Bond
Full Cut
Ablebond 84 - 1
Thermo Sonic
Au (1.0 mil / 1.3 mil)
Cu
Method
Material
Material
Die Area
Leadframe
Ag
Lead Plating
Types
Materials
Pb : Sn (37 : 63)
28 Lead PDIP & SOIC / 44 Lead PLCC
EME6300 / MP150 / MP190
Package
Remarks:
B-162 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
To Order
Previous Datasheet
Index
Next Data Sheet
IR2131
HIN1,2,3
LIN1,2,3
ITRIP
SD
FLT - CLR
FAULT
LO1,2,3
HO1,2,3
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
HIN1,2,3
LIN1,2,3
50%
50%
t
t
r
t
off
t
f
on
FLT-CLR
SD
90%
90%
C0M
HO1,2,3
LO1,2,3
10%
10%
Figure 3. Switching Time Test Circuit
Figure 4. Switching Time Waveform Definitions
LIN1,2,3
50%
HIN1,2,3
ITRIP
50%
50%
50%
SD
FLT - CLR
50%
LIN1,2,3
FAULT
50%
50%
LO1,2,3
50%
DT
50%
DT
50%
50%
LO1,2,3
HO1,2,3
t
t
t
sd
flt
fltclr
t
itrip
Figure 5. Deadtime Waveform Definitions
Figure 6. Shutdown Waveform Definitions
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-163
To Order
Previous Datasheet
Index
Next Data Sheet
IR2131
50
45
40
35
30
25
20
50
45
40
35
30
25
20
480V
320V
480V
320V
160V
0V
160V
0V
1E+2
1E+3
1E+4
1E+5
1E+2
1E+3
1E+4
1E+5
Frequency (Hz)
Frequency (Hz)
Figure 7. IR2131 TJ vs. Frequency (IRF820)
Figure 8. IR2131 TJ vs. Frequency (IRF830)
RGATE = 33Ω, VCC = 15V
RGATE = 20Ω, VCC = 15V
100
140
120
100
80
480V
320V
80
60
40
20
160V
0V
480V
320V
60
160V
0V
40
20
1E+2
1E+3
1E+4
1E+5
1E+2
1E+3
1E+4
1E+5
Frequency (Hz)
Frequency (Hz)
Figure 9. IR2131 TJ vs. Frequency (IRF840)
Figure 10. IR2131 TJ vs. Frequency (IRF450)
RGATE = 15Ω, VCC = 15V
RGATE = 10Ω, VCC = 15V
B-164 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
To Order
相关型号：
©2020 ICPDF网 联系我们和版权申明