IR2181STRPBF [INFINEON]
HIGH AND LOW SIDE DRIVER; 高端和低端驱动器
| 型号： | IR2181STRPBF |
| 厂家： | 
Infineon |
| 描述： | HIGH AND LOW SIDE DRIVER |
| 文件： | 总21页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD60172 Rev.G
( )( ) &(PbF)
S
IR2181 4
HIGH AND LOW SIDE DRIVER
Packages
Features
Floating channel designed for bootstrap operation
•
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
14-Lead PDIP
8-Lead PDIP
IR21814
IR2181
Gate drive supply range from 10 to 20V
•
Undervoltage lockout for both channels
•
3.3V and 5V input logic compatible
•
Matched propagation delay for both channels
•
Logic and power ground +/- 5V offset.
•
14-Lead SOIC
8-Lead SOIC
IR21814S
Lower di/dt gate driver for better noise immunity
•
IR2181S
Output source/sink current capability 1.4A/1.8A
•
Also available LEAD-FREE (PbF)
•
IR2181/IR2183/IR2184 Feature Comparison
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Description
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The IR2181(4)(S) are high voltage,
high speed power MOSFET and IGBT
drivers with independent high and low
side referenced output channels. Pro-
prietary HVIC and latch immune
CMOS technologies enable rugge-
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dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to
3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-
conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side
configuration which operates up to 600 volts.
Typical Connection
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ꢀ
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ꢀ
ꢀ
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ꢆꢈꢉ
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ꢆꢈꢉ
ꢄꢅ
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ꢁꢅꢇ
ꢆꢅ
ꢊꢋꢌꢍꢎꢌꢏꢐꢐꢀ
IR2181
IR21814
ꢄꢅ
ꢀ
ꢀ
ꢀ
ꢁꢁ
ꢁꢁ
ꢂ
ꢄꢈꢉ
ꢆꢈꢉ
ꢄꢈꢉ
ꢆꢈꢉ
ꢀ
ꢃ
ꢑꢅ
ꢆꢅꢒꢓ
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
ꢀ
ꢁꢅꢇ
ꢆꢅ
ꢀ
ꢃꢃ
ꢃꢃ
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IR2181 4
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Min.
Max.
Units
V
B
-0.3
625
V
S
V
- 25
V
+ 0.3
+ 0.3
25
B
B
B
V
HO
V
S
- 0.3
V
V
Low side and logic fixed supply voltage
Low side output voltage
-0.3
-0.3
CC
V
V
LO
V
V
+ 0.3
CC
V
Logic input voltage (HIN & LIN - IR2181/IR21814)
Logic ground (IR21814 only)
V
- 0.3
SS
+ 10
IN
SS
V
V
- 25
V + 0.3
CC
SS
CC
dV /dt
S
Allowable offset supply voltage transient
—
50
V/ns
P
D
Package power dissipation @ T ≤ +25°C
A
(8-lead PDIP)
—
1.0
(8-lead SOIC)
(14-lead PDIP)
(14-lead SOIC)
(8-lead PDIP)
(8-lead SOIC)
(14-lead PDIP)
(14-lead SOIC)
—
—
—
—
—
—
—
—
-50
—
0.625
1.6
W
1.0
Rth
JA
Thermal resistance, junction to ambient
125
200
ꢥ5
°C/W
120
150
150
300
T
J
Junction temperature
T
S
Storage temperature
°C
T
L
Lead temperature (soldering, 10 seconds)
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V and V offset rating are tested with all supplies biased at 15V differential.
S SS
Symbol
Definition
Min.
Max.
Units
VB
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
V
+ 10
V + 20
S
S
V
S
Note 1
600
V
HO
V
S
V
B
V
Low side and logic fixed supply voltage
Low side output voltage
10
0
20
CC
V
V
V
CC
LO
V
Logic input voltage (HIN & LIN - IR2181/IR21814)
Logic ground (IR21814/IR21824 only)
Ambient temperature
V
V
SS
+ 5
IN
SS
V
-5
5
SS
T
A
-40
125
°C
Note 1ꢦ Logic operational for V of -5 to +600V. Logic state held for V of -5V to -V . (Please refer to the Design Tip
S S BS
DTꢧꢥ-3 for more details).
Note 2ꢦ HIN and LIN pins are internally clamped with a 5.2V zener diode.
2
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IR2181 4
Dynamic Electrical Characteristics
V
(V , V ) ꢨ 15V, V ꢨ COM, C ꢨ 1000 pF, T ꢨ 25°C.
BIAS CC BS
L
A
SS
Symbol
Definition
Turn-on propagation delay
Turn-off propagation delay
Delay matching, HS & LS turn-on/off
Turn-on rise time
Min. Typ. Max. Units Test Conditions
t
—
—
—
—
—
180
220
0
2ꢥ0
330
35
V ꢨ 0V
S
on
t
V ꢨ 0V or 600V
S
off
MT
nsec
t
40
60
V
V
ꢨ 0V
ꢨ 0V
r
S
S
t
f
Turn-off fall time
20
35
Static Electrical Characteristics
V
(V , V ) ꢨ 15V, V ꢨ COM and T ꢨ 25°C unless otherwise specified. The V , V and I parameters are
SS O O
BIAS
CC BS
SS
A
IL IH
IN
referenced to V /COM and are applicable to the respective input leads HIN and LIN. The V , I and Ron parameters are
referenced to COM and are applicable to the respective output leadsꢦ HO and LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
(IR2181/IR21814 )
2.ꢥ
VCC ꢨ 10V to 20V
VCC ꢨ 10V to 20V
V
Logic “1” input voltage
Logic “0” input voltage
—
—
—
0.8
1.2
0.1
50
IH
(IR2181/IR21814)
V
—
—
—
—
20
50
IL
V
µA
V
V
OH
High level output voltage, V
- V
—
I
I
ꢨ 0A
ꢨ 0A
BIAS
O
O
O
V
OL
Low level output voltage, V
—
O
I
Offset supply leakage current
—
V
ꢨ V ꢨ 600V
B S
LK
I
Quiescent V supply current
BS
60
120
150
240
V
IN
ꢨ 0V or 5V
QBS
I
Quiescent V
supply current
V
ꢨ 0V or 5V
IN
QCC
CC
I
Logic “1” input bias current
Logic “0” input bias current
VIN ꢨ 5V
VIN ꢨ 0V
—
—
25
—
60
IN+
I
1.0
ꢧ.8
IN-
V
V
and V supply undervoltage positive going
BS
8.0
8.ꢧ
CCUV+
CC
V
threshold
BSUV+
V
V
and V supply undervoltage negative going
BS
ꢥ.4
0.3
8.2
0.ꢥ
ꢧ.0
—
CCUV-
CC
V
threshold
BSUV-
V
Hysteresis
CCUVH
V
BSUVH
I
Output high short circuit pulsed current
Output low short circuit pulsed current
1.4
1.8
1.ꢧ
2.3
—
—
V ꢨ 0V,
O
O+
PW ≤ 10 µs
ꢨ 15V,
A
I
V
O
O-
PW ≤ 10 µs
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IR2181 4
Functional Block Diagrams
VB
UV
2181
DETECT
HO
R
R
Q
PULSE
FILTER
HV
LEVEL
SHIFTER
S
VSS/COM
VS
HIN
LEVEL
SHIFT
PULSE
GENERATOR
VCC
LO
UV
DETECT
VSS/COM
LEVEL
LIN
DELAY
SHIFT
COM
VB
UV
21814
DETECT
HO
R
R
Q
PULSE
FILTER
HV
LEVEL
SHIFTER
S
VSS/COM
LEVEL
VS
HIN
PULSE
SHIFT
GENERATOR
VCC
UV
DETECT
LO
VSS/COM
LEVEL
LIN
DELAY
SHIFT
COM
VSS
4
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IR2181 4
Lead Definitions
Symbol Description
HIN
LIN
Logic input for high side gate driver output (HO), in phase (IR2181/IR21814)
Logic input for low side gate driver output (LO), in phase (IR2181/IR21814)
Logic Ground (IR21814 only)
VSS
V
B
High side floating supply
HO
High side gate drive output
V
S
High side floating supply return
V
CC
Low side and logic fixed supply
LO
Low side gate drive output
COM
Low side return
Lead Assignments
V
V
1
2
3
4
HIN
LIN
1
2
3
4
HIN
LIN
B
8
ꢥ
B
8
HO
HO
ꢥ
V
S
V
S
COM
LO
COM
LO
6
5
6
5
V
V
CC
CC
8-Lead PDIP
8-Lead SOIC
IR2181
IR2181S
14
13
12
11
10
ꢧ
1
2
3
4
5
6
ꢥ
HIN
14
13
12
11
10
ꢧ
1
2
3
4
5
6
ꢥ
HIN
LIN
V
LIN
B
V
B
HO
VSS
HO
VSS
V
S
V
S
COM
LO
COM
LO
8
V
CC
8
V
CC
14-Lead SOIC
14-Lead PDIP
IR21814S
IR21814
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IR2181 4
;ꢐ]
;ꢐ]
ꢄꢈꢉ
ꢆꢈꢉ
ꢄꢈꢉ
ꢆꢈꢉ
ꢍ
ꢎꢗ
ꢍ
ꢎꢢꢢ
ꢍ
ꢢ
ꢍ
ꢖ
^ꢐ]
^ꢐ]
ꢄꢅ
ꢆꢅ
ꢄꢅ
ꢆꢅ
*ꢐ]
*ꢐ]
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
;ꢐ]
;ꢐ]
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ꢆꢅ
ꢄꢅ
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ꢇꢑ
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^ꢐ]
ꢆꢅ
ꢄꢅ
Figure 3. Delay Matching Waveform Definitions
6
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IR2181 4
500
400
300
200
100
0
500
400
300
200
100
0
Max.
Max.
Typ.
Typ.
-50 -25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
Supply Voltage (V)
Figure 4A. Turn-on Propagation Delay
vs. Temperature
Figure 4B. Turn-on Propagation Delay
vs. Supply Voltage
600
500
400
300
200
100
600
500
400 Max.
300
Typ.
Max.
Typ.
200
100
0
-50 -25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
Supply Voltage (V)
Figure 5A. Turn-off Propagation Delay
vs. Temperature
Figure 5B. Turn-off Propagation Delay
vs. Supply Voltage
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IR2181 4
120
100
80
60
40
20
0
120
100
80
Max.
Typ.
60
Max.
40
Typ.
20
0
-50 -25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
Supply Voltage (V)
Figure 6A. Turn-on Rise Time vs. Temperature
Figure 6B. Turn-on Rise Time vs. Supply Voltage
80
80
60
60
40
20
0
Max.
40
Max.
Typ
Typ.
20
0
-50
-25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
Supply Voltage (V)
Figure 7A. Turn-off Fall Time vs. Temperature
Figure 7B. Turn-off Fall Time vs. Supply Voltage
8
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IR2181 4
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Min.
Min.
-50
-25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
Supply Voltage (V)
Figure 8A. Logic "1" Input Voltage
vs. Temperature
Figure 8B. Logic "1" Input Voltage
vs. Supply Voltage
6
6
5
4
3
2
1
0
5
4
3
2
1
0
Max.
Max.
10
12
14
16
18
20
-50
-25
0
25
50
75
100 125
Temperature (oC)
Supply Voltage (V)
Figure 9B. Logic "0" Input Voltage
vs. Supply Voltage
Figure 9A. Logic "0" Input Voltage
vs. Temperature
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IR2181 4
5
4
3
2
1
0
5
4
3
Max.
2
Max.
1
0
-50
10
12
14
16
18
20
-25
0
25
50
75
100 125
Temperature (oC)
Supply Voltage (V)
Figure 10B. High Level Output vs. Supply Voltage
Figure 10A. High Level Output vs. Temperature
0.5
0.4
0.3
0.2
0.5
0.4
0.3
0.2
Max.
Max.
0.1
0.1
0.0
0.0
10
12
14
16
18
20
-50
-25
0
25
50
75
100 125
Temperature (oC)
Supply Voltage (V)
Figure 11B. Low Level Output vs. Supply Voltage
Figure 11A. Low Level Output vs. Temperature
10
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IR2181 4
500
400
300
200
100
0
500
400
300
200
100
0
Max.
Max.
100
200
300
400
500
600
-50 -25
0
25
50
75
100 125
Temperature (oC)
VB Boost Voltage (V)
Figure 12A. Offset Supply Leakage Current
vs. Temperature
Figure 12B. Offset Supply Leakage Current
vs. VB Boost Voltage
250
200
150
100
50
250
200
150
100
50
Max.
Max.
Typ.
Min.
Typ.
Min.
0
-50
0
-25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
VBS Floating Supply Voltage (V)
Figure 13B. VBS Supply Current
vs. VBS Floating Supply Voltage
Figure 13A. VBS Supply Current
vs. Temperature
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IR2181 4
500
400
500
400
300
200
100
0
300
Max.
Typ.
Max.
200
Typ.
Min.
100
Min.
0
-50 -25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
V
CC Supply Voltage (V)
Figure 14B. VCC Supply Current
vs. VCC Supply Voltage
Figure 14A. VCC Supply Current
vs. VCC Temperature
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Max.
Typ.
Max.
Typ.
-50 -25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
Supply Voltage (V)
Figure 15A. Logic "1" Input Bias Current
vs. Temperature
Figure 15B. Logic "1" Input Bias Current
vs. Supply Voltage
12
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IR2181 4
5
4
3
2
1
0
5
4
3
2
1
0
Max.
Max.
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
Supply Voltage (V)
Figure 16B. Logic "0" Input Bias Current
vs. Supply Voltage
Figure 16A. Logic "0" Input Bias Current
vs. Temperature
12
11
10
9
12
11
10
9
Max.
Max.
Typ.
Min.
Typ.
Min.
8
8
7
7
6
-50
6
-50
-25
0
25
50
75
100 125
-25
0
25
50
75
100
125
Temperature (oC)
Temperature (oC)
Figure 18. VCC and VBS Undervoltage Threshold (-)
vs. Temperature
Figure 17. VCC and VBS Undervoltage Threshold (+)
vs. Temperature
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IR2181 4
5
4
5
4
3
2
1
0
3
Typ.
2
Typ.
Min.
Min.
1
0
-50
-25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
Supply Voltage (V)
Figure 19B. Output Source Current
vs. Supply Voltage
Figure 19A. Output Source Current
vs. Temperature
5.0
5
4
3
2
1
0
4.0
3.0
2.0
1.0
Typ.
Typ.
Min.
Min.
-50
-25
0
25
50
75
100 125
10
12
14
16
18
20
Temperature (oC)
Supply Voltage (V)
Figure 20B. Output Sink Current
vs. Supply Voltage
Figure 20A. Output Sink Current
vs. Temperature
14
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IR2181 4
140
120
100
80
140
120
100
80
140v
140v
70v
0v
70v
0v
60
60
40
40
20
20
1
10
100
1000
1
10
100
1000
Frequency (KHz)
Frequency (KHz)
Figure 22.IR2181 vs.Frequency (IRFBC30),
Figure 21. IR2181 vs. Frequency (IRFBC20),
Rgate
CC=15V
Rgate=33 , VCC=15V
=22Ω,V
Ω
140v
140
120
100
80
140
70v
0v
120
100
80
140v
70v
0v
60
60
40
40
20
20
1
10
100
1000
1
10
Frequency (KHz)
Figure 23.IR2181 vs.Frequency (IRFBC40),
Rgate CC=15V
100
1000
Frequency (KHz)
Figure 24.IR2181 vs.Frequency (IRFPE50),
Rgate CC=15V
=15Ω,V
=10Ω,V
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IR2181 4
140
120
100
80
140
120
100
80
140v
70v
0v
60
60
140v
70v
0v
40
40
20
20
1
1
10
Frequency (KHz)
Figure 26.IR21814 vs.Frequency (IRFBC30),
100
1000
10
100
1000
Frequency (KHz)
Figure 25.IR21814 vs.Frequency (IRFBC20),
Rgate
CC=15V
=22Ω,V
Rgate
CC=15V
=33Ω,V
140v
140
120
100
80
140
120
100
80
70v
0v
140v
70v
0v
60
60
40
40
20
20
1
10
100
1000
1
10
100
1000
Frequency (KHz)
Figure 28.IR21814 vs.Frequency (IRFPE50),
Rgate CC=15V
Frequency (KHz)
Figure 27.IR21814 vs.Frequency (IRFBC40),
Rgate CC=15V
=10Ω,V
=15Ω,V
16
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( ) ( ) &(PbF)
S
IR2181 4
140
120
100
80
140
120
100
80
140v
70v
0v
140v
70v
0v
60
60
40
40
20
20
1
10
Frequency (KHz)
Figure 29.IR2181s vs.Frequency (IRFBC20),
100
1000
1
10
100
1000
Frequency (KHz)
Figure 30.IR2181s vs.Frequency (IRFBC30),
=33Ω,V
Rgate
CC=15V
=22Ω,V
Rgate
CC=15V
140V 70V 0V
140v70v
140
120
100
80
140
120
100
80
0v
60
60
40
40
20
20
1
10
100
1000
1
10
100
1000
Frequency (KHz)
Frequency (KHz)
Figure 31.IR2181s vs.Frequency (IRFBC40),
Rgate CC=15V
Figure 32.IR2181s vs.Frequency (IRFPE50),
Rgate CC=15V
=10Ω,V
=15Ω,V
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1ꢥ
( ) ( ) &(PbF)
S
IR2181 4
140
120
100
80
140
120
100
80
140v
70v
0v
60
60
140v
70v
0v
40
40
20
20
1
1
10
Frequency (KHz)
Figure 34.IR21814s vs.Frequency (IRFBC30),
100
1000
10
Frequency (KHz)
Figure 33.IR21814s vs.Frequency (IRFBC20),
100
1000
=33Ω,V
Rgate
CC=15V
=22Ω,V
Rgate
CC=15V
140v70v
140
120
100
80
140
120
100
80
0v
140v
70v
0v
60
60
40
40
20
20
1
10
100
1000
1
10
100
1000
Frequency (KHz)
Frequency (KHz)
Figure 35.IR21814s vs.Frequency (IRFBC40),
Rgate CC=15V
Figure 36.IR21814s vs.Frequency (IRFPE50),
Rgate CC=15V
=15Ω,V
=10Ω,V
18
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( ) ( ) &(PbF)
S
IR2181 4
Case outlines
01-6014
01-3003 01 (MS-001AB)
8-Lead PDIP
INC HES
MILLIMETERS
DIM
D
B
MIN
.0532
A1 .0040
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
FOOTPRINT
8X 0.72 [.028]
5
A
A
b
c
D
E
e
.013
.0075
.189
.1497
.0098
.1968
.1574
8
1
7
2
6
3
5
6
H
E
0.25 [.010]
A
.050 BASIC
1.27 BASIC
0.635 BASIC
6.46 [.255]
4
e 1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
3X 1.27 [.050]
e
6X
8X 1.78 [.070]
y
K x 45°
e1
A
A
C
y
0.10 [.004]
8X c
8X L
A1
B
8X b
7
0.25 [.010]
C
NOTES:
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
01-602ꢥ
01-0021 11 (MS-012AA)
8-Lead SOIC
www.irf.com
1ꢧ
( ) ( ) &(PbF)
S
IR2181 4
01-6010
01-3002 03 (MS-001AC)
14-Lead PDIP
01-601ꢧ
14-Lead SOIC (narrow body)
01-3063 00 (MS-012AB)
20
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( ) ( ) &(PbF)
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IR2181 4
LEADFREE PART MARKING INFORMATION
Part number
IRxxxxxx
Date code
IR logo
YWW?
?XXXX
Pin 1
Identifier
Lot Code
(Prod mode - 4 digit SPN code)
?
MARKING CODE
P
Lead Free Released
Non-Lead Free
Released
Assembly site code
Per SCOP 200-002
ORDER INFORMATION
Basic Part (Non-Lead Free)
Leadfree Part
8-Lead PDIP IR2181 order IR2181
8-Lead SOIC IR2181S order IR2181S
14-Lead PDIP IR21814 order IR21814
14-Lead SOIC IR21814 order IR21814S
8-Lead PDIP IR2181 order IR2181PbF
8-Lead SOIC IR2181S order IR2181SPbF
14-Lead PDIP IR21814 order IR21814PbF
14-Lead SOIC IR21814 order IR21814SPbF
Thisproduct has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web Site http://www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
10/15/2004
www.irf.com
21
相关型号：
IR21834STRPBF
Half Bridge Based MOSFET Driver, 2.3A, CMOS, PDSO14, LEAD FREE, MS-012AB, SOIC-14
INFINEON
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