IR3312S [INFINEON]
Buffer/Inverter Based Peripheral Driver, 1 Driver, 37A, PSSO4, D2PAK-5;
| 型号： | IR3312S |
| 厂家： | 
Infineon |
| 描述： | Buffer/Inverter Based Peripheral Driver, 1 Driver, 37A, PSSO4, D2PAK-5 开关 高压 |
| 文件： | 总12页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DataSheetNo.PD60211rev.D
IR3312(S)
PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH
Product Summary
Features
• Load current feedback
• Programmable over current shutdown
• Active clamp
R
20mΩ
6 to 28V
2800
ds(on)
V
cc.op.
• E.S.D protection
• Input referenced to Vcc
• Over temperatue shutdown
• Reverse battery protection
Current ratio
I
3 to 30A
35V
shutdown
Description
Active clamp
Load Dump
The IR 3312(S) is a Fully Protected 4 terminal high side switch.
The input signal is referenced to Vcc. When the input voltage
Vcc - Vin is higher than the specified Vih threshold, the output
power MOSFET is turned-on. When Vcc - Vin is lower than
the specified Vil threshold, the output MOSFET is turned-off.
A sense current proportional to the current in the power Mosfet
is sourced to the Ifb pin. Over-current shutdown occurs when
Vifb - Vin > 4.5 V. The current shutdown threshold is adjusted
by selecting the proper RIfb. Either over-current and over-tem-
perature latches off the switch. The device is reset by pulling
the input pin high. Other integrated protections ( ESD, reverse
battery, active clamp ) make the IR3312(S) very rugged and
suitable for the automotive environment.
40V
Package
5 Lead
D2Pak (SMD220)
IR3312S
5 Lead TO220
IR3312
Typical Connection
VCC
IR 3312
IN
Battery
Ifb
OUT
10 k
LOAD
RIfb
on
System
Ground
off
Power
Ground
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1
IR3312(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
o
are referenced to Vcc lead. (T
Ambient
= 25 C unless otherwise specified).
Symbol
Parameter
Min.
-16
Max.
50
Units
V
V
cc - in max
Maximum input voltage
V
V
cc- Ifb max
Maximum Ifb voltage
-0.3
-0.3
50
V
Vcc - Vout max.
Ids cont.
Ids1 cont
Ids pulsed
ESD 1
Maximum output voltage
33
Diode max. permanent current (Rth = 60 °C/W) (1)
Diode max. permanent current (Rth = 5 °C/W) (1)
Diode max. pulsed current (1)
—
—
—
—
—
2.8
A
25
100
4
Electrostatic discharge ( human body model )C=100pF, R=1500Ω,
Electrostatic discharge (machine model)C=200pF,R=0Ω, L=10µH
Power dissipation ( Rth = 60 °C/W )
Max. storage and junction temperature
Minimum resistor on the Ifb pin
kV
ESD 2
0.5
2
Pd
W
°C
—
TJ max.
Min RIfb
Ifb max
-40
150
0.3
-20
kΩ
mA
—
Max. Ifb current
+20
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
R
R
R
R
R
1
2
1
2
3
60
Thermal resistance junction to Ambient - TO220
Thermal resistance junction to case - TO220
—
th
th
th
th
th
—
0.7
60
°C/W
Thermal resistance with standard footprint - SMD220
Thermal resistance with 1" square footprint - SMD220
Thermal resistance junction to case - SMD220
—
35
—
0.7
—
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
Parameter
Min.
6
Max.
28
Units
V
V
cc - in
Continuous input voltage
V
V
cc - Ifb
Continuous Ifb pin voltage
0.3
6
28
V
Vcc
Supply to power ground voltage
28
Iout
Continuous output current ( Rth/amb < 5 °C/W, Tj = 125°C)
Continuous output current ( Rth/amb < 60 °C/W, Tj = 125°C)
Ifb resistor to program Isd and scale (2 & 3)
Minimum turn-on pulse width
—
14
A
Iout 85°C amb.
RIfb
Pulse min.
—
0.5
1
3.9
3.5
kΩ
ms
—
Fmax
Maximum operating frequency
—
—
500
200
Hz
Fmax Prot.
Maximum frequency with protections activated
1) Limited by junction temperature. Pulsed current is also limited by wiring
2) <500 Ohm or shorting Ifb to gnd may damage the part with Isd around 37A
3) >5000 Ohm or leaving Ifb open will shutdown the part. No current will flow in the load.
2
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IR3312(S)
Protection Characteristics
o
Tj = 25 C (unless otherwise specified), RIfb = 500 to 5kOhm.
Symbol Parameter
Min. Typ. Max. Units Test Conditions
VIfb -Vin
@ Isd
Tsd
Over-current shutdown threshold
Over-temp. shutdown threshold
4
—
4.5
5.4
V
°C
see Fig. 7
see Fig. 7
165
—
—
Treset
OV
Isdf
Protection reset time
50
36
300
41
µS
V
33
30
9
Over voltage shutdown (not latched)
Fixed over current shutdown
Adjustable over current shutdown 1K
37
45
A
VIfb<Vin
Isd_1k
12
16
A
RIfb=1k
Min.Pulse Minimum pulse width (no WAIT state)
200
0.5
500
1.2
1200
3.5
µs
ms
see Fig. 6
WAIT
WAIT function timer
see Figs. 6 and 7
Rev.Rds
Rds(on) reverse battery protection
10
16
28
mΩ
Vcc-Vin=-12V, Iload=5A
on
Static Electrical Characteristics
o
(T = 25 C, V = 14V unless otherwise specified.)
j cc
Symbol Parameter
Min. Typ. Max. Units Test Conditions
Iq
Total quiescent current (Iout +Ifb)
—
µ
22
50
A
Vcc-Vin=0, Vcc-
Vout=12V
Vcc-VIfb=12V
Vcc-Vin=14V
1.5
—
4
5
4
1
9
6
mA
V
Iin
Input current
Vih
High level input threshold voltage (4)
Low level input threshold voltage (4)
Input hysterisis = Vih-Vil
5.5
—
Vil
3.5
0.4
—
Vhys
Iout qs
1.5
15
Output quiescent current
µA Vcc-Vin=0; Vcc-VIfb=0;
Vcc-Vout=12V
Rds1 on
Rds2 on
Rds3 on
ON state resistance (5)
ON state resistance (5)
ON state resistance (5)
10
10
20
15
16
20
28
38
—
Iout=15A, Vcc-Vin=14V
I
=10A,
V
out
Vcc -Vin=6
mΩ
o
=15A,
out Tj = 150 C
28.5
I
Iout = 10mA
Vclamp1
Vclamp2
Vsd
Vcc to Vout active clamp voltage
Vcc to Vout active clamp voltage
Body diode forward voltage
33
—
—
35
36
Iout=30A,
40
1
Vcc-VIfb<20V
V
0.85
Iout=5A
Iout=100mA,Vcc-Vfb> 35V
Vaval.
Vcc to Vout avalanche voltage
40
43
50
Switching Electrical Characteristics
o
V
cc
= 14V, Resistive Load = 0.4Ω, Tj = 25 C, (unless otherwise specified).
Symbol Parameter
Min. Typ. Max. Units Test Conditions
Td
Turn-on delay time to Vcc-Vout= 0.9 Vcc
9
2
0.2
5
20
5
on
T
Rise time to Vcc-Vout=5V
Rise time to V -V = 0.1V
out
1
15
r1
µs
see figure 2
T
cc
cc
60
1.5
60
25
1
r2
E
Turn ON energy
0.75
14
mJ
µs
—
5
on
Td
Turn-off delay to V -V = 0.1V
cc
out cc
off
see figure 3
T
f
Fall time to Vcc-Vout = 0.9 V
7
2
cc
E
Turn OFF energy
0.5
mJ
—
off
4) Input thresholds are measured directly between the input pin and the tab. Any parasitic resistance in common between the load
current path and the input signal path can significantly affect the thresholds.
5) Rds(on) is measured between the Tab and the Out pin, 5mm away from the package.
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3
IR3312(S)
Current Sense Characteristics
Symbol Parameter
Min. Typ. Max. Units Test Conditions
Ratio
I load / IIfb current ratio
2,400
2,800 3,300
—
T = 25oC ,Rfb = 500Ω,
I = 30A
j
Ratio_TC Iload/Ifb variation over temperature
offset Load current diagnostic offset
Trst Ifb response time (low signal)
-5
-0.45
—
0
0
5
+5
0.45
15
%
A
T = -40 T0 +150oC
j
I = 2A
µs
90% of the I load step
Functional Block Diagram
VCC
active clamp
disconnection
charge
pump
driver
On/Off
fast turn-off
4mA
70V
33V
70V
+
-
33V
36V
Reset
Q
latch
Set
Wait
timer
43V
1.5 ms
timer
4V
300 us
-
-
Min. pulse
+
+
80Ω
I out > 30 A
reverse
battery
protection
Tj > 165 °C
Ifb
OUT
IN
4
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IR3312(S)
Lead Assignments
3 (Vcc)
3 (Vcc)
1 - In
2 - Ifb
3 - Vcc (tab)
4 - NC
5 - Out
1 2 3 4 5
1 2 3 4 5
5 Lead - D2PAK (SMD220)
5 Lead - TO220
IR3312
IR3312S
Part Number
Vcc-Vin
Vcc-Vin
Vcc-Vin max
Vcc-Vin1 max
Vcc-Vin (op)
Vih
Vcc-Vout
Vcc-Vout max
Vclamp1
Vcc
Vcc
Vclamp2
90%
Vil
Vhys
In
IR3312
Iout
Iout max
-Ids cont.
-Ids pulsed
Iout 85°C
Isd
Vcc-Vout
DV/dt(on)
Iin
Iin max
Iin1,2
5V
10 %
Iin(on)
VIfb
Ifb
Ifb
Out
Td on
Tr2
Iq
Tr1
Figure 1 - Voltages and currents definitions
Figure 2 - Switching time definitions (turn-on)
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5
IR3312(S)
Vcc
Vcc-Vin
Vin
Ids
90%
Vcc-Vout
DV/dt(off)
Vds clamp
T clamp
Vcc
10 %
Td off
Tf
Vout
Vcc-Vclamp
( see Design tip to evaluate power dissipation )
Figure 3 - Switching time definitions (turn-off)
Figure 4 - Active clamp waveforms
Vin
clamp
Vcc-Vin
12V
0 V
I Load
Ifb
T minpulse
T minpulse
Wait
24 us (typ.)
Iout
0 V
Precise measurement
Figure 6 - Minimum pulse & WAIT
function
Figure 5 - Current sense precision:
Accurate measurement only when the power Mosfet is fully ON
6
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IR3312(S)
Vcc-Vin
12V
0 V
t > T reset
t > T reset
Iout
t < T reset
t < T reset
OI shutdown
Isd
wait
wait
Tj
OT shutdown
Tjsd
Figure 7 - Protection Timing Diagrams
All curves are typical characteristics. Operation in hatched areas is not recommended. Tj=250C, RIfb=500 Ohm,
Vcc=14V (unless otherwise specified).
40
10
35
8
30
25
6
20
4
15
10
2
5
0
0
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
Figure 9- Rds (mΩ) vs Vcc-Vin (V)
on
Figure 8 - Icc (mA) vs Vcc-Vin (V)
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7
IR3312(S)
200%
180%
160%
140%
120%
100%
80%
6
5
4
3
2
1
0
60%
Vifb-Vin
Vih
40%
20%
Vil
0%
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25
50 75 100 125 150
o
Figure 10 -Normalized Rdson (%) vs Tj ( C)
o
Figure 11 - Vih, Vil & Vifb -Vin (V) vs Tj ( C)
100
10
1
Isd min 3s
isd typ
Isd max 3s
4
3
2
1
0
Max. specified
Typical value
100
1000
10000
0
15
30
Figure 12 - Error (+/-A) vs Iload (A)
Figure 13 - Isd (A) vs RIfb (Ohm)
8
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IR3312(S)
100
10
1
35
30
25
20
15
10
5
single pulse
5°C/W
100Hz rth=60°C/W dT=25°C
1kHz rth=60°C/W dT=25°C
15°C/W
35°C/W 1'' foot
60°C/W std fooprint
0
-50
0
50
100
150
200
0.001
0.01
0.1
1
10
Figure 14 - Max. DC current (A) vs Temp. (°C)
Figure 15 - Max. I (A) vs inductance (mH)
100
10
1
100
10
1
60°C/W free air
5°C/W
Current path capability
should be above those
Load characteristic
should be above those
T=25°C free air/ std. footprint
T=100°C free air/ std. footprint
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
1E-05 0.0001 0.001
0.01
0.1
1
10
100
1000
o
Figure 17 - Rth ( C/W) vs Time (s)
Figure 16 - I out (A) vs Protection resp. Time (s)
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IR3312(S)
Case Outline - TO220 (5 lead)
IRGB 01-3042 01
10
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IR3312(S)
Case Outline 5 Lead - D2PAK (SMD220)
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11
IR3312(S)
Tape & Reel 5 Lead - D2PAK (SMD220)
01-3071 00 / 01-3072 00
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q100] market. 7/26/2004
12
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