IR3505ZMTRPBF [INFINEON]

XPHASE3TM PHASE IC; XPHASE3TM相位IC
IR3505ZMTRPBF
型号: IR3505ZMTRPBF
厂家: Infineon    Infineon
描述:

XPHASE3TM PHASE IC
XPHASE3TM相位IC

文件: 总20页 (文件大小:482K)
中文:  中文翻译
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IR3505Z  
DATA SHEET  
XPHASE3TM PHASE IC  
DESCRIPTION  
The IR3505Z Phase IC combined with an IR XPhase3TM Control IC provides a full featured and flexible way to  
implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides  
overall system control and interfaces with any number of “Phase” ICs which each drive and monitor a single  
phase of a multiphase converter. The XPhase3TM architecture results in a power supply that is smaller, less  
expensive, and easier to design while providing higher efficiency than conventional approaches.  
FEATURES  
7V/2A gate drivers (4A GATEL sink current)  
Support converter output voltage up to 5.1 V (Limited to VCCL-1.4V)  
Support loss-less inductor current sensing  
Feed-forward voltage mode control  
Integrated boot-strap synchronous PFET  
Only four IC related external components per phase  
3 wire analog bus connects Control and Phase ICs (VDAC, Error Amp, ISHARE)  
3 wire digital bus for accurate daisy-chain phase timing control without external components  
Debugging function isolates phase IC from the converter  
Self-calibration of PWM ramp, current sense amplifier, and current share amplifier  
Single-wire bidirectional average current sharing  
Small thermally enhanced 16L 3 x 3mm MLPQ package  
RoHS compliant  
APPLICATION CIRCUIT  
Page 1 of 20  
March 17, 2009  
IR3505Z  
ORDERING INFORMATION  
Part Number  
Package  
Order Quantity  
IR3505ZMTRPBF  
16 Lead MLPQ  
(3 x 3 mm body)  
16 Lead MLPQ  
(3 x 3 mm body)  
3000 per reel  
* IR3505ZMPBF  
* Samples only  
100 piece strips  
ABSOLUTE MAXIMUM RATINGS  
Stresses beyond those listed below may cause permanent damage to the device. These are stress ratings only  
and functional operation of the device at these or any other conditions beyond those indicated in the operational  
sections of the specifications are not implied.  
Operating Junction Temperature…………….. 0oC to 150oC  
Storage Temperature Range………………….-65oC to 150oC  
MSL Rating………………………………………2  
Reflow Temperature…………………………….260oC  
PIN #  
PIN NAME  
ISHARE  
DACIN  
VMAX  
8V  
VMIN  
-0.3V  
-0.3V  
n/a  
ISOURCE  
1mA  
1mA  
n/a  
ISINK  
1mA  
1mA  
n/a  
1
2
3
4
5
6
7
3.3V  
n/a  
LGND  
PHSIN  
8V  
-0.3V  
-0.3V  
-0.3V  
-0.3V  
1mA  
2mA  
1mA  
1mA  
2mA  
1mA  
n/a  
PHSOUT  
CLKIN  
8V  
8V  
PGND  
0.3V  
5A for 100ns,  
200mA DC  
8
9
GATEL  
VCCL  
8V  
8V  
-0.3V DC, -5V for  
100ns  
5A for 100ns,  
200mA DC  
5A for 100ns,  
200mA DC  
-0.3V  
n/a  
5A for 100ns,  
200mA DC  
10  
BOOST  
34V  
-0.3V  
1A for 100ns,  
100mA DC  
3A for 100ns,  
100mA DC  
11  
12  
GATEH  
SW  
34V  
34V  
-0.3V DC, -5V for  
100ns  
3A for 100ns,  
100mA DC  
3A for 100ns,  
100mA DC  
-0.3V DC, -5V for  
100ns  
3A for 100ns,  
100mA DC  
n/a  
13  
14  
15  
16  
VCC  
CSIN+  
CSIN-  
EAIN  
18V  
8V  
-0.3V  
-0.3V  
-0.3V  
-0.3V  
n/a  
10mA  
1mA  
1mA  
1mA  
1mA  
1mA  
1mA  
8V  
8V  
Note:  
1. Maximum GATEH – SW = 8V  
2. Maximum BOOST – GATEH = 8V  
Page 2 of 20  
March 17, 2009  
IR3505Z  
RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGIN  
8.0V VCC 16V, 4.75V VCCL 7.5V, 0.5V V(DACIN) 1.6V, 250kHz CLKIN 9MHz, 250kHz PHSIN  
1.5MHz, 0 oC TJ 125 oC  
ELECTRICAL CHARACTERISTICS  
The electrical characteristics involve the spread of values guaranteed within the recommended operating conditions.  
Typical values represent the median values, which are related to 25°C. CGATEH = 3.3nF, CGATEL = 6.8nF (unless  
otherwise specified).  
PARAMETER  
Gate Drivers  
GATEH Source Resistance BOOST – SW = 7V. Note 1  
TEST CONDITION  
MIN  
TYP  
MAX  
UNIT  
1.0  
1.0  
1.0  
0.4  
2.0  
2.0  
2.0  
4.0  
5
2.5  
2.5  
2.5  
1.0  
A
GATEH Sink Resistance  
GATEL Source Resistance  
GATEL Sink Resistance  
GATEH Source Current  
GATEH Sink Current  
GATEL Source Current  
GATEL Sink Current  
BOOST – SW = 7V. Note 1  
VCCL – PGND = 7V. Note 1  
VCCL – PGND = 7V. Note 1  
BOOST=7V, GATEH=2.5V, SW=0V.  
BOOST=7V, GATEH=2.5V, SW=0V.  
VCCL=7V, GATEL=2.5V, PGND=0V.  
VCCL=7V, GATEL=2.5V, PGND=0V.  
A
A
A
GATEH Rise Time  
BOOST – SW = 7V, measure 1V to 4V  
transition time  
10  
10  
20  
10  
40  
ns  
GATEH Fall Time  
GATEL Rise Time  
GATEL Fall Time  
BOOST - SW = 7V, measure 4V to 1V  
transition time  
5
10  
5
ns  
ns  
ns  
ns  
VCCL – PGND = 7V, Measure 1V to 4V  
transition time  
VCCL – PGND = 7V, Measure 4V to 1V  
transition time  
GATEL low to GATEH high  
delay  
BOOST = VCCL = 7V, SW = PGND = 0V,  
measure time from GATEL falling to 1V to  
GATEH rising to 1V  
10  
10  
30  
20  
GATEH low to GATEL high BOOST = VCCL = 7V, SW = PGND = 0V,  
20  
80  
40  
ns  
delay  
measure time from GATEH falling to 1V to  
GATEL rising to 1V  
Disable Pull-Down  
Resistance  
Note 1  
130  
kꢀ  
Clock  
CLKIN Threshold  
CLKIN Bias Current  
CLKIN Phase Delay  
Compare to V(VCCL)  
CLKIN = V(VCCL)  
40  
-0.5  
40  
45  
0.0  
75  
57  
0.5  
125  
%
µA  
ns  
Measure time from CLKIN<1V to  
GATEH>1V  
PHSIN Threshold  
Compare to V(VCCL)  
35  
4
50  
15  
55  
35  
%
PHSOUT Propagation  
Delay  
Measure time from CLKIN > (VCCL * 50% )  
to PHSOUT > (VCCL *50%). 10pF @125 C  
ns  
o
PHSIN Pull-Down  
Resistance  
30  
1
100  
0.6  
0.4  
170  
kꢀ  
V
PHSOUT High Voltage  
I(PHSOUT) = -10mA, measure VCCL –  
PHSOUT  
PHSOUT Low Voltage  
I(PHSOUT) = 10mA  
1
V
Page 3 of 20  
March 17, 2009  
IR3505Z  
PARAMETER  
PWM Comparator  
TEST CONDITION  
MIN  
TYP  
MAX  
UNIT  
mV/  
%DC  
PWM Ramp Slope  
Vin=12V  
Note 1  
42  
-5  
-5  
52.5  
0
57  
5
Input Offset Voltage  
EAIN Bias Current  
Minimum Pulse Width  
mV  
µA  
ns  
-0.3  
65  
5
0 EAIN 3V  
Note 1  
75  
Minimum GATEH Turn-off  
Time  
20  
80  
160  
nS  
Current Sense Amplifier  
CSIN+/- Bias Current  
-200  
-50  
0
0
200  
50  
nA  
nA  
CSIN+/- Bias Current  
Mismatch  
Note 1  
Input Offset Voltage  
CSIN+ = CSIN- = DACIN. Measure  
input referred offset from DACIN  
-1  
1
mV  
Gain  
0.5V V(DACIN) < 1.6V  
30  
32.5  
6.8  
35  
V/V  
Unity Gain Bandwidth  
C(ISHARE)=10pF. Measure at ISHARE.  
Note 1  
4.8  
8.8  
MHz  
Slew Rate  
6
V/µs  
mV  
mV  
V
Differential Input Range  
Differential Input Range  
Common Mode Input Range  
Rout at TJ = 25 oC  
Rout at TJ = 125 oC  
ISHARE Source Current  
ISHARE Sink Current  
Share Adjust Amplifier  
Input Offset Voltage  
Differential Input Range  
Gain  
0.8V V(DACIN) 1.6V, Note 1  
-10  
-5  
50  
50  
0.5V V(DACIN) < 0.8V, Note 1  
Note 1  
Note 1  
0
Note2  
3.7  
2.3  
3.0  
4.7  
1.6  
1.4  
kꢀ  
3.6  
5.4  
kꢀ  
0.500  
0.500  
2.9  
mA  
mA  
2.9  
Note 1  
-3  
-1  
0
3
1
mV  
V
Note 1  
CSIN+ = CSIN- = DACIN. Note 1  
Note 1  
4
5.0  
8.5  
0
6
V/V  
kHz  
mV  
Unity Gain Bandwidth  
PWM Ramp Floor Voltage  
4
17  
+116  
ISHARE unconnected  
-116  
Measured Relative to DACIN  
Maximum PWM Ramp Floor  
Voltage  
ISHARE = DACIN - 200mV  
Measured relative to FLOOR with  
ISHARE unconnected  
mV  
mV  
120  
180  
240  
Minimum PWM Ramp Floor  
Voltage  
ISHARE = DACIN + 200mV  
Measured relative to FLOOR with  
ISHARE unconnected  
-220  
-160  
-100  
Body Brake Comparator  
Threshold Voltage with EAIN  
falling.  
Measured relative to PWM Ramp Floor  
Voltage  
-300  
-200  
-200  
-100  
-110  
-10  
mV  
mV  
Threshold Voltage with EAIN  
rising.  
Measured relative to PWM Ramp Floor  
Voltage  
Hysteresis  
70  
40  
105  
65  
130  
90  
mV  
ns  
Propagation Delay  
VCCL = 5V. Measure time from EAIN <  
V(DACIN) (200mV overdrive) to GATEL  
transition to < 4V.  
Page 4 of 20  
March 17, 2009  
IR3505Z  
PARAMETER  
OVP Comparator  
TEST CONDITION  
MIN  
TYP  
MAX  
UNIT  
OVP Threshold  
Step V(ISHARE) up until GATEL drives  
high. Compare to V(VCCL)  
-1.0  
15  
-0.8  
40  
-0.4  
70  
V
Propagation Delay  
V(VCCL)=5V, Step V(ISHARE) up from  
V(DACIN) to V(VCCL). Measure time to  
V(GATEL)>4V.  
nS  
Synchronous Rectification Disable Comparator  
Threshold Voltage  
The ratio of V(CSIN-) / V(DACIN), below  
66  
75  
86  
%
which V(GATEL) is always low.  
Negative Current Comparator  
Input Offset Voltage  
Note 1  
-16  
0
16  
mV  
nS  
Propagation Delay Time  
Apply step voltage to V(CSIN+) –  
V(CSIN-). Measure time to V(GATEL)<  
1V.  
100  
200  
400  
Bootstrap Diode  
Forward Voltage  
I(BOOST) = 30mA, VCCL=6.5V  
Compare to V(VCCL)  
180  
260  
480  
-50  
mV  
mV  
Debug Comparator  
Threshold Voltage  
General  
-250  
-150  
VCC Supply Current  
VCCL Supply Current  
BOOST Supply Current  
1.1  
3.1  
1.2  
3.0  
6.7  
3.5  
6.1  
12.1  
5.8  
mA  
mA  
mA  
4.75V V(BOOST)-V(SW) 8V  
DACIN Bias Current  
SW Floating Voltage  
1
µA  
-1.5  
-0.75  
0.3  
Measured in the application  
V
Note 1: Guaranteed by design, but not tested in production  
Note 2: VCCL-0.5V or VCC – 2.5V, whichever is lower  
Page 5 of 20  
March 17, 2009  
IR3505Z  
PIN DESCRIPTION  
PIN# PIN SYMBOL PIN DESCRIPTION  
1
ISHARE  
Output of the Current Sense Amplifier is connected to this pin through a 3kꢀ  
resistor. Voltage on this pin is equal to V(DACIN) + 32.5 [V(CSIN+) – V(CSIN-)].  
Connecting all ISHARE pins together creates a share bus which provides an  
indication of the average current being supplied by all the phases. The signal is used  
by the Control IC for voltage positioning and over-current protection. OVP mode is  
initiated if the voltage on this pin rises above V(VCCL)- 0.8V.  
2
DACIN  
Reference voltage input from the Control IC. The Current Sense signal and PWM  
ramp is referenced to the voltage on this pin.  
3
4
5
LGND  
PHSIN  
Ground for internal IC circuits. IC substrate is connected to this pin.  
Phase clock input.  
PHSOUT  
Phase clock output.  
6
7
8
9
CLKIN  
PGND  
GATEL  
VCCL  
Clock input.  
Return for low side driver and reference for GATEH non-overlap comparator.  
Low-side driver output and input to GATEH non-overlap comparator.  
Supply for low-side driver. Internal bootstrap synchronous PFET is connected from  
this pin to the BOOST pin.  
10  
BOOST  
Supply for high-side driver. Internal bootstrap synchronous PFET is connected  
between this pin and the VCCL pin.  
11  
12  
13  
14  
15  
GATEH  
SW  
High-side driver output and input to GATEL non-overlap comparator.  
Return for high-side driver and reference for GATEL non-overlap comparator.  
Supply for internal IC circuits.  
VCC  
CSIN+  
CSIN-  
Non-Inverting input to the current sense amplifier, and input to debug comparator.  
Inverting input to the current sense amplifier, and input to synchronous rectification  
disable comparator.  
16  
EAIN  
PWM comparator input from the error amplifier output of Control IC. Body Braking  
mode is initiated if the voltage on this pin is less than V(DACIN).  
Page 6 of 20  
March 17, 2009  
IR3505Z  
SYSTEM THEORY OF OPERATION  
PWM Control Method  
The PWM block diagram of the XPhaseTM architecture is shown in Figure 1. Feed-forward voltage mode control with  
trailing edge modulation is used. A high-gain wide-bandwidth voltage type error amplifier in the Control IC is used for the  
voltage control loop. Input voltage is sensed in phase ICs and feed-forward control is realized. The PWM ramp slope will  
change with the input voltage and automatically compensate for changes in the input voltage. The input voltage can  
change due to variations in the silver box output voltage or due to the wire and PCB-trace voltage drop related to  
changes in load current.  
GATE DRIVE  
VOLTAGE  
VIN  
CONTROL IC  
PHSOUT  
PHASE IC  
VCC  
CLOCK GENERATOR  
CLKOUT  
CLKIN  
PHSIN  
CLK  
D
Q
VCCH  
RESET  
DOMINANT  
GATEH  
1
2
CBST  
PHSOUT  
PHSIN  
VOSNS+  
VOUT  
1
2
4
5
D
Q
Q
SW  
PWM  
COMPARATOR  
CLK  
COUT  
-
+
VCCL  
EAIN  
GND  
PWM LATCH  
ENABLE  
GATEL  
PGND  
REMOTE SENSE  
AMPLIFIER  
+
-
+
BODY  
BRAKING  
COMPARATOR  
VID6-  
VOSNS-  
RAMP  
DISCHARGE  
CLAMP  
VO  
LDO AMPLIFIER  
VDAC  
LGND  
SHARE ADJUST  
ERROR AMPLIFIER  
ERROR  
AMPLIFIER  
+
VDAC  
CURRENT  
SENSE  
AMPLIFIER  
+
+
-
EAOUT  
VID6  
VID6  
+
ISHARE  
-
CSIN+  
CSIN-  
-
3K  
RCOMP  
CCOMP  
CCS RCS  
VID6  
VID6+  
+
-
CCOMP1 RFB1  
CFB  
RFB  
FB  
DACIN  
RVSETPT  
VSETPT  
VDRP  
RDRP1  
PHSOUT  
RDRP  
PHASE IC  
IVSETPT  
IROSC VDRP  
+ AMP  
CDRP  
VCC  
CLK  
D
Q
-
CLKIN  
PHSIN  
VCCH  
RESET  
DOMINANT  
1
2
IIN  
GATEH  
1
2
4
5
CBST  
D
Q
Q
PWM  
CLK  
COMPARATOR  
SW  
-
+
EAIN  
VCCL  
PWM LATCH  
ENABLE  
+
GATEL  
PGND  
BODY  
BRAKING  
COMPARATOR  
VID6-  
RAMP  
DISCHARGE  
CLAMP  
SHARE ADJUST  
ERROR AMPLIFIER  
+
CURRENT  
SENSE  
AMPLIFIER  
VID6  
VID6  
+
ISHARE  
DACIN  
-
-
3K  
CSIN+  
CSIN-  
VID6  
VID6+  
+
+
-
CCS RCS  
Figure 1 PWM Block Diagram  
Frequency and Phase Timing Control  
The oscillator is located in the Control IC and the system clock frequency is programmable from 250kHz to 9MHZ by an  
external resistor. The control IC system clock signal (CLKOUT) is connected to CLKIN of all the phase ICs. The phase  
timing of the phase ICs is controlled by the daisy chain loop, where control IC phase clock output (PHSOUT) is  
connected to the phase clock input (PHSIN) of the first phase IC, and PHSOUT of the first phase IC is connected to  
PHSIN of the second phase IC, etc. and PHSOUT of the last phase IC is connected back to PHSIN of the control IC.  
During power up, the control IC sends out clock signals from both CLKOUT and PHSOUT pins and detects the  
feedback at PHSIN pin to determine the phase number and monitor any fault in the daisy chain loop. Figure 2 shows the  
phase timing for a four phase converter. The switching frequency is set by the resistor ROSC. The clock frequency  
equals the number of phase times the switching frequency.  
Page 7 of 20  
March 17, 2009  
IR3505Z  
Control IC CLKOUT  
(Phase IC CLKIN)  
Control IC PHSOUT  
(Phase IC1 PHSIN)  
Phase IC1  
PWM Latch SET  
Phase IC 1 PHSOUT  
(Phase IC2 PHSIN)  
Phase IC 2 PHSOUT  
(Phase IC3 PHSIN)  
Phase IC 3 PHSOUT  
(Phase IC4 PHSIN)  
Phase IC4 PHSOUT  
(Control IC PHSIN)  
Figure 2 Four Phase Oscillator Waveforms  
PWM Operation  
The PWM comparator is located in the phase IC. Upon receiving the falling edge of a clock pulse, the PWM latch is  
set; the PWM ramp voltage begins to increase; the low side driver is turned off, and the high side driver is turned on  
after the non-overlap time. When the PWM ramp voltage exceeds the error amplifier’s output voltage the PWM latch  
is reset. This turns off the high side driver, turns on the low side driver after the non-overlap time, and activates the  
ramp discharge clamp. The clamp drives the PWM ramp voltage to the level set by the share adjust amplifier until  
the next clock pulse.  
The PWM latch is reset dominant allowing all phases to go to zero duty cycle within a few tens of nanoseconds in  
response to a load step decrease. Phases can overlap and go up to 100% duty cycle in response to a load step  
increase with turn-on gated by the clock pulses. An error amplifier output voltage greater than the common mode  
input range of the PWM comparator results in 100% duty cycle regardless of the voltage of the PWM ramp. This  
arrangement guarantees the error amplifier is always in control and can demand 0 to 100% duty cycle as required.  
It also favors response to a load step decrease which is appropriate given the low output to input voltage ratio of  
most systems. The inductor current will increase much more rapidly than decrease in response to load transients.  
An additional advantage of this PWM modulator is that differences in ground or input voltage at the phases have no  
effect on operation since the PWM ramps are referenced to VDAC.  
Figure 3 depicts PWM operating waveforms under various conditions.  
Page 8 of 20  
March 17, 2009  
IR3505Z  
PHASE IC  
CLOCK  
PULSE  
EAIN  
PWMRMP  
GATEH  
GATEL  
VDAC  
STEADY-STATE  
OPERATION  
DUTY CYCLE INCREASE  
DUE TO LOAD  
INCREASE  
DUTY CYCLE DECREASE  
DUE TO VIN INCREASE  
(FEED-FORWARD)  
DUTY CYCLE DECREASE DUE TO LOAD  
DECREASE (BODY BRAKING) OR FAULT  
(VCCLUV, OCP, VID=11111X)  
STEADY-STATE  
OPERATION  
Figure 3 PWM Operating Waveforms  
Body BrakingTM  
In a conventional synchronous buck converter, the minimum time required to reduce the current in the inductor in  
response to a load step decrease is;  
L*(IMAX IMIN  
)
TSLEW  
=
VO  
The slew rate of the inductor current can be significantly increased by turning off the synchronous rectifier in  
response to a load step decrease. The switch node voltage is then forced to decrease until conduction of the  
synchronous rectifier’s body diode occurs. This increases the voltage across the inductor from Vout to Vout +  
VBODYDIODE  
.
The minimum time required to reduce the current in the inductor in response to a load transient  
decrease is now;  
L*(IMAX IMIN  
VO +VBODYDIODE  
)
TSLEW  
=
Since the voltage drop in the body diode is often comparable to the output voltage, the inductor current slew rate  
can be increased significantly. This patented technique is referred to as “body braking” and is accomplished through  
the “body braking comparator” located in the phase IC. If the error amplifier’s output voltage drops below the output  
voltage of the share adjust amplifier in the phase IC, this comparator turns off the low side gate driver.  
Lossless Average Inductor Current Sensing  
Inductor current can be sensed by connecting a series resistor and a capacitor network in parallel with the inductor  
and measuring the voltage across the capacitor, as shown in Figure 4. The equation of the sensing network is,  
1
RL + sL  
1+ sRCSCCS  
vC (s) = vL (s)  
= iL (s)  
1+ sRCSCCS  
Usually the resistor Rcs and capacitor Ccs are chosen so that the time constant of Rcs and Ccs equals the time  
constant of the inductor which is the inductance L over the inductor DCR (RL). If the two time constants match, the  
voltage across Ccs is proportional to the current through L, and the sense circuit can be treated as if only a sense  
resistor with the value of RL was used. The mismatch of the time constants does not affect the measurement of  
inductor DC current, but affects the AC component of the inductor current.  
Page 9 of 20  
March 17, 2009  
IR3505Z  
L
v
L
L
R
R
L
i
O
V
CS  
CS  
C
O
C
Current  
Sense Amp  
c
CSOUT  
Figure 4 Inductor Current Sensing and Current Sense Amplifier  
The advantage of sensing the inductor current versus high side or low side sensing is that actual output current being  
delivered to the load is obtained rather than peak or sampled information about the switch currents. The output voltage  
can be positioned to meet a load line based on real time information. Except for a sense resistor in series with the  
inductor, this is the only sense method that can support a single cycle transient response. Other methods provide no  
information during either load increase (low side sensing) or load decrease (high side sensing).  
An additional problem associated with peak or valley current mode control for voltage positioning is that they suffer from  
peak-to-average errors. These errors will show in many ways but one example is the effect of frequency variation. If the  
frequency of a particular unit is 10% low, the peak to peak inductor current will be 10% larger and the output impedance  
of the converter will drop by about 10%. Variations in inductance, current sense amplifier bandwidth, PWM prop delay,  
any added slope compensation, input voltage, and output voltage are all additional sources of peak-to-average errors.  
Current Sense Amplifier  
A high speed differential current sense amplifier is located in the phase IC, as shown in Figure 5. Its gain is nominally  
32.5 and the 3850 ppm/ºC increase in inductor DCR should be compensated in the voltage loop feedback path.  
The current sense amplifier can accept positive differential input up to 50mV and negative up to -10mV before clipping.  
The output of the current sense amplifier is summed with the DAC voltage and sent to the control IC and other phases  
through an on-chip 3Kresistor connected to the ISHARE pin. The ISHARE pins of all the phases are tied together and  
the voltage on the share bus represents the average current through all the inductors and is used by the control IC for  
voltage positioning and current limit protection. The input offset of this amplifier is calibrated to +/- 1mV in order to  
reduce the current sense error.  
The input offset voltage is the primary source of error for the current share loop. In order to achieve very small input  
offset error and superior current sharing performance, the current sense amplifier continuously calibrates itself. This  
calibration algorithm creates ripple on ISHARE bus with a frequency of fsw/(32*28) in a multiphase architecture.  
Average Current Share Loop  
Current sharing between phases of the converter is achieved by the average current share loop in each phase IC. The  
output of the current sense amplifier is compared with the average current at the share bus. If current in a phase is  
smaller than the average current, the share adjust amplifier of the phase will pull down the starting point of the PWM  
ramp thereby increasing its duty cycle and output current; if current in a phase is larger than the average current, the  
share adjust amplifier of the phase will pull up the starting point of the PWM ramp thereby decreasing its duty cycle and  
output current. The current share amplifier is internally compensated so that the crossover frequency of the current  
share loop is much slower than that of the voltage loop and the two loops do not interact.  
Page 10 of 20  
March 17, 2009  
IR3505Z  
IR3505Z THEORY OF OPERATION  
Block Diagram  
The Block diagram of the IR3505Z is shown in Figure 5, and specific features are discussed in the following  
sections.  
CLKIN  
PHSIN  
PHSOUT  
CLK  
D
Q
GATEH  
DRIVER  
BOOST  
GATEH  
SW  
PWMQ  
PWM LATCH  
100% DUTY LATCH  
PWMQ  
CLK  
D
Q
D
Q
Q
PWM_CLK  
GATEH NON-  
OVERLAP  
LATCH  
PWM_CLK  
CLK  
GATEH NON-  
OVERLAP  
RESET  
DOMINANT  
PWM COMPARATOR  
COMPARATOR  
EAIN  
VCC  
-
-
Q
S
R
+
+
SET  
RMPOUT  
PHSIN  
PWM RESET  
DOMINANT  
GATEL NON-  
OVERLAP  
PWM RAMP  
GENERATOR  
1V  
GATEL NON-  
OVERLAP  
VCC  
CALIBRATION  
VCCL  
LATCH  
COMPARATOR  
DACIN-SHARE_ADJ  
1V  
Q
S
R
+
-
SET  
DOMINANT  
BODY BRAKING  
COMPARATOR  
100mV  
200mV  
+
-
GATEL  
DRIVER  
VCCL  
NEGATIVE  
CURRENT  
LATCH  
+
DACIN  
GATEL  
PGND  
OVP  
COMPARATOR  
-
SHARE_ADJ  
VCCL  
-
Q
R
S
0.8V  
+
RESET  
DOMINANT  
SYNCHRONOUS RECTIFICATION  
DISABLE COMPARATOR  
DEBUG OFF  
(LOW=OPEN)  
ISHARE  
-
NEGATIVE CURRENT  
COMPARATOR  
SHARE  
ADJUST  
AMPLIFIER  
CURRENT SENSE  
AMPLIFIER  
+
-
+
CSAOUT  
CSIN-  
CSIN+  
-
+
3K  
X33  
+
+
-
CALIBRATION  
+
DEBUG  
COMPARATOR  
X
CALIBRATION  
DACIN  
IROSC  
0.2V  
0.75  
DACIN  
LGND  
-
(CLKIN IF 1-PHASE)  
PHSIN  
+
IROSC  
Figure 5 Block diagram  
Tri-State Gate Drivers  
The gate drivers can deliver up to 2A peak current (4A sink current for bottom driver). An adaptive non-overlap  
circuit monitors the voltage on the GATEH and GATEL pins to prevent MOSFET shoot-through current while  
minimizing body diode conduction. The non-overlap latch is added to eliminate the error triggering caused by the  
switching noise. An enable signal is provided by the control IC to the phase IC without the addition of a dedicated  
signal line. The error amplifier output of the control IC drives low in response to any fault condition such as VCCL  
under voltage or output overload. The IR3505Z Body BrakingTM comparator detects this and drives bottom gate  
output low. This tri-state operation prevents negative inductor current and negative output voltage during power-  
down.  
A synchronous rectification disable comparator is used to detect converter CSIN- pin voltage, which represents  
local converter output voltage. If the voltage is below 75% of VDAC and negative current is detected, GATEL drives  
low, which disables synchronous rectification and eliminates negative current during power-up. The gate drivers pull  
low if the supply voltages are below the normal operating range. An 80kresistor is connected across the  
GATEH/GATEL and PGND pins to prevent the GATEH/GATEL voltage from rising due to leakage or other causes  
under these conditions.  
Page 11 of 20  
March 17, 2009  
IR3505Z  
Over Voltage Protection (OVP)  
The IR3505Z includes over-voltage protection that turns on the low side MOSFET to protect the load in the  
event of a shorted high-side MOSFET, converter out of regulation, or connection of the converter output to an  
excessive output voltage. As shown in Figure 6, if ISHARE pin voltage is above V(VCCL) – 0.8V, which  
represents over-voltage condition detected by control IC, the over-voltage latch is set. GATEL drives high and  
GATEH drives low. The OVP circuit overrides the normal PWM operation and within approximately 150ns will  
fully turn-on the low side MOSFET, which remains ON until ISHARE drops below V(VCCL) – 0.8V when over  
voltage ends. The over voltage fault is latched in control IC and can only be reset by cycling the power to  
control IC. The error amplifier output (EAIN) is pulled down by control IC and will remain low. The lower  
MOSFETs alone can not clamp the output voltage however an SCR or N-MOSFET could be triggered with the  
OVP output to prevent processor damage.  
OVP  
OUTPUT  
THRESHOLD  
VOLTAGE  
(VO)  
VCCL-800 mV  
ISHARE(IIN)  
GATEH  
GATEL  
FAULT LATCH  
(CONTROL IC)  
ERROR  
AMPLIFIER  
INPUT  
VDAC  
(EAIN)  
AFTER  
OVP  
NORMAL OPERATION  
OVP CONDITION  
Figure 6 - Over-voltage protection waveforms  
Page 12 of 20  
March 17, 2009  
IR3505Z  
PWM Ramp  
Every time the phase IC is powered up PWM ramp magnitude is calibrated to generate a 50 mV/% ramp for a  
VCC=12V. For example, for a 15% duty ratio the ramp amplitude is 750mV for VCC=12V. Feed-forward  
control is achieved because the PWM ramp varies with VCC voltage proportionally after calibration.  
In response to a load step-up the error amplifier can demand 100 % duty cycle. In order to avoid pulse  
skipping under this scenario and allow the BOOST cap to replenish, a minimum off time is allowed in this  
mode of operation. As shown in Figure 6, 100 % duty is detected by comparing the PWM latch output  
(PWMQ) and its input clock (PWM_CLK). If the PWMQ is high when the PWM_CLK is asserted the TopFET  
turnoff is initiated. The TopFET is again turned on once the RMPOUT drops within 200 mV of the VDAC.  
100 % DUTY OPERATION  
NORMAL OPERATION  
CLKIN  
PHSIN  
(2 Phase Design)  
EAIN  
RMPOUT  
PWMQ  
VDAC+200mV  
VDAC  
80ns  
Figure 7: PWM Operation during normal and 100 % duty mode.  
Debugging Mode  
If CSIN+ pin is pulled up to VCCL voltage, IR3505Z enters into debugging mode. Both drivers are pulled low  
and ISHARE output is disconnected from the current share bus, which isolates this phase IC from other  
phases. However, the phase timing from PHSIN to PHSOUT does not change.  
Emulated Bootstrap Diode  
IR3505Z integrates a PFET to emulate the bootstrap diode. An external bootstrap diode connected from VCCL  
pin to BOOST pin can be added to reduce the drop across the PFET but is not needed in most applications.  
Page 13 of 20  
March 17, 2009  
IR3505Z  
Applications information  
IR3505Z EXTERNAL COMPONENTS  
Inductor Current Sensing Capacitor CCS and Resistor RCS  
The DC resistance of the inductor is utilized to sense the inductor current. Usually the resistor RCS and capacitor  
CCS in parallel with the inductor are chosen to match the time constant of the inductor, and therefore the voltage  
across the capacitor CCS represents the inductor current. If the two time constants are not the same, the AC  
component of the capacitor voltage is different from that of the real inductor current. The time constant mismatch  
does not affect the average current sharing among the multiple phases, but does effect the current signal ISHARE  
as well as the output voltage during the load current transient if adaptive voltage positioning is adopted.  
Measure the inductance L and the inductor DC resistance RL. Pre-select the capacitor CCS and calculate RCS as  
follows.  
L RL  
(1)  
RCS  
=
CCS  
Bootstrap Capacitor CBST  
Depending on the duty cycle and gate drive current of the phase IC, a capacitor in the range of 0.1uF to 1uF is  
needed for the bootstrap circuit.  
Decoupling Capacitors for Phase IC  
A 0.1uF-1uF decoupling capacitor is required at the VCCL pin.  
CURRENT SHARE LOOP COMPENSATION  
The internal compensation of current share loop ensures that crossover frequency of the current share loop is at  
least one decade lower than that of the voltage loop so that the interaction between the two loops is eliminated.  
The crossover frequency of current share loop is approximately 8 kHz.  
Output Voltage Bleed Resistor  
The floating high side driver draws bias current from the BOOST pin (3.5mA typical). This current flows out of  
the IR3505Z through the SW pin and will charge up the output capacitor when the control IC is disabled. A  
bleed resistor connected from the converter output voltage to ground is required to prevent the output voltage  
from exceeding the control IC Over-Voltage protection threshold. The bleed resistor can be selected using the  
following equation.  
R
BLEED = VBLEED / (5.8mA x N)  
(2)  
Where VBLEED is the maximum desired output voltage pre-bias and N is the number of IR3505Z used in the  
converter.  
Optional phases  
A converter can be designed to support more or less phases. This can be quite useful in situations where the final  
load current is unknown or where increased load current may be required at some time in the future.  
Figure 8 provides an application circuit that allows adjustment to the number of phases. By populating zero ohm  
jumpers, or not; the number of phases can be adjusted by diverting the daisy chain timing from a 3505Z to the  
next one in sequence. The effect of more or less phases on converter performance can be tested without actually  
removing a 3505Z or it’s MOSFETs from the printed circuit board through use of a pull-up resistor from VCCL to  
the CSIN+ pin to enable de-bug mode.  
Page 14 of 20  
March 17, 2009  
IR3505Z  
Three  
Phase  
Two  
Phase  
Figure 8 – Optional Phase application circuit  
Page 15 of 20  
March 17, 2009  
IR3505Z  
LAYOUT GUIDELINES  
The following layout guidelines are recommended to reduce the parasitic inductance and resistance of the  
PCB layout, therefore minimizing the noise coupled to the IC.  
Dedicate at least one middle layer for a ground plane.  
Separate analog bus (EAIN, DACIN, and ISHARE) from digital bus (CLKIN, PHSIN, and PHSOUT) to  
reduce the noise coupling.  
Connect PGND and LGND pins to the ground plane through vias.  
Place current sense resistors and capacitors (RCS and CCS) close to phase IC. Use Kelvin connection for  
the inductor current sense wires, but separate the two wires by ground polygon or route as a differential  
pair. The wire from the inductor terminal to CSIN- should not cross over the fast transition nodes, i.e.  
switching nodes, gate drive outputs and bootstrap nodes.  
Place the decoupling capacitor CVCCL as close as possible to the VCCL pin.  
Place the phase IC as close as possible to the MOSFETs to reduce the parasitic resistance and  
inductance of the gate drive paths.  
Place the input ceramic capacitors close to the drain of top MOSFET and the source of bottom MOSFET.  
Use a combination of different packages of ceramic capacitors.  
There are two switching power loops. One loop includes the input capacitors, top MOSFET, inductor,  
output capacitors and the load; another loop consists of bottom MOSFET, inductor, output capacitors and  
the load. Route the switching power paths using wide and short traces or polygons; use multiple vias for  
connections between layers.  
Page 16 of 20  
March 17, 2009  
IR3505Z  
PCB Metal and Component Placement  
Lead land width should be equal to nominal part lead width. The minimum lead to lead spacing should  
be 0.2mm to minimize shorting.  
Lead land length should be equal to maximum part lead length + 0.3 mm outboard extension + 0.05mm  
inboard extension. The outboard extension ensures a large and inspectable toe fillet, and the inboard  
extension will accommodate any part misalignment and ensure a fillet.  
Center pad land length and width should be equal to maximum part pad length and width. However, the  
minimum metal to metal spacing should be 0.17mm for 2 oz. Copper (0.1mm for 1 oz. Copper and ≥  
0.23mm for 3 oz. Copper)  
Four 0.3mm diameter vias shall be placed in the pad land spaced at 0.85mm, and connected to ground  
to minimize the noise effect on the IC, and to transfer heat to the PCB  
No PCB traces should be routed nor vias placed under any of the 4 corners of the IC package. Doing so  
can cause the IC to rise up from the PCB resulting in poor solder joints to the IC leads.  
Page 17 of 20  
March 17, 2009  
IR3505Z  
Solder Resist  
The solder resist should be pulled away from the metal lead lands by a minimum of 0.06mm. The solder  
resist mis-alignment is a maximum of 0.05mm and it is recommended that the lead lands are all Non Solder  
Mask Defined (NSMD). Therefore pulling the S/R 0.06mm will always ensure NSMD pads.  
The minimum solder resist width is 0.13mm.  
At the inside corner of the solder resist where the lead land groups meet, it is recommended to provide a  
fillet so a solder resist width of 0.17mm remains.  
The land pad should be Solder Mask Defined (SMD), with a minimum overlap of the solder resist onto the  
copper of 0.06mm to accommodate solder resist mis-alignment. In 0.5mm pitch cases it is allowable to have  
the solder resist opening for the land pad to be smaller than the part pad.  
Ensure that the solder resist in-between the lead lands and the pad land is 0.15mm due to the high aspect  
ratio of the solder resist strip separating the lead lands from the pad land.  
The four vias in the land pad should be tented or plugged from bottom board side with solder resist.  
Page 18 of 20  
March 17, 2009  
IR3505Z  
Stencil Design  
The stencil apertures for the lead lands should be approximately 80% of the area of the lead lands.  
Reducing the amount of solder deposited will minimize the occurrence of lead shorts. Since for 0.5mm  
pitch devices the leads are only 0.25mm wide, the stencil apertures should not be made narrower;  
openings in stencils < 0.25mm wide are difficult to maintain repeatable solder release.  
The stencil lead land apertures should therefore be shortened in length by 80% and centered on the lead  
land.  
The land pad aperture should be approximately 70% area of solder on the center pad. If too much  
solder is deposited on the center pad the part will float and the lead lands will be open.  
The maximum length and width of the land pad stencil aperture should be equal to the solder resist  
opening minus an annular 0.2mm pull back to decrease the incidence of shorting the center land to the  
lead lands when the part is pushed into the solder paste.  
Page 19 of 20  
March 17, 2009  
IR3505Z  
PACKAGE INFORMATION  
16L MLPQ (3 x 3 mm Body) – θJA = 38oC/W, θJC = 3oC/W  
Data and specifications subject to change without notice.  
This product will be designed and qualified for the Consumer market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.  
www.irf.com  
Page 20 of 20  
March 17, 2009  

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