IR350DM12CCBPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER;
| 型号： | IR350DM12CCBPBF |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER 二极管 |
| 文件： | 总3页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0123J rev. A 02/97
IR350DM..CCB SERIES
STANDARD RECOVERY DIODES
Junction Size:
Wafer Size:
Square 350 mils
4"
VRRM Class:
800 and 1200 V
Passivation Process:
Glassivated MOAT
Reference IR Packaged Part: IRKD71 Series
Major Ratings and Characteristics
Parameters
Units
TestConditions
VFM
Maximum Forward Voltage
960 mV
TJ = 25°C, IF = 25 A
VRRM Reverse Breakdown Voltage Range
800 and 1200 V TJ = 25°C, IRRM = 100 µA
(1)
(1)Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
Nominal Front Metal Composition, Thickness
Chip Dimensions
350 x 350 mils (see drawing)
100 mm, with std. < 110 > flat
300 µm, ± 10 µm
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
45 µm
0.25 mm diameter minimum
Seedrawing
Ink Dot Location
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen,withnocontamination
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1
IR350DM..CCB Series
Bulletin I0123J rev. A 02/97
Ordering Information Table
Device Code
IR 350
D
M
12
C
CB
3
1
2
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: D = Wire Bondable Standard Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = VRRM
Available Class
08 = 800 V
12 = 1200 V
Metallization: C = Aluminium (Anode) - Silver (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in microns (mils)
2
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IR350DM..CCB Series
Bulletin I0123J rev. A 02/97
Wafer Layout
TOP VIEW
N° 69 Basic Cells
All dimensions are in millimeters
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