IR3856WMTRPBF [INFINEON]

HIGHLY EFFICIENT INTEGRATED 6A, SYNCHRONOUS BUCK REGULATOR; 高效的综合6A同步降压稳压器
IR3856WMTRPBF
型号: IR3856WMTRPBF
厂家: Infineon    Infineon
描述:

HIGHLY EFFICIENT INTEGRATED 6A, SYNCHRONOUS BUCK REGULATOR
高效的综合6A同步降压稳压器

稳压器 开关式稳压器或控制器 电源电路 开关式控制器
文件: 总34页 (文件大小:1022K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD-97506  
IR3856WMPbF  
TM  
HIGHLY EFFICIENT  
SupIRBuck  
INTEGRATED 6A, SYNCHRONOUS BUCK REGULATOR  
Features  
Description  
Greater than 95% Maximum Efficiency  
Wide Input Voltage Range 1.5V to 16V  
Wide Output Voltage Range 0.7V to 0.9*Vin  
Continuous 6A Load Capability  
The IR3856W SupIRBuckTM is an easy-to-use,  
fully integrated and highly efficient DC/DC  
synchronous Buck regulator. The MOSFETs co-  
packaged with the on-chip PWM controller make  
IR3856W a space-efficient solution, providing  
accurate power delivery for low output voltage  
applications.  
Integrated Bootstrap-diode  
High Bandwidth E/A for excellent transient  
performance  
Programmable Switching Frequency up to 1.5MHz  
Programmable Over Current Protection  
PGood output  
IR3856W is a versatile regulator which offers  
programmability of start up time, switching  
frequency and current limit while operating in  
wide input and output voltage range.  
Hiccup Current Limit  
Precision Reference Voltage (0.7V, +/-1%)  
Programmable Soft-Start  
The switching frequency is programmable from  
250kHz to 1.5MHz for an optimum solution.  
Enable Input with Voltage Monitoring Capability  
Enhanced Pre-Bias Start-up  
Seq input for Tracking applications  
-40oC to 125oC operating junction temperature  
Thermal Protection  
It also features important protection functions,  
such as Pre-Bias startup, hiccup current limit and  
thermal shutdown to give required system level  
security in the event of fault conditions.  
4mm x 5mm Power QFN Package  
Halogen Free, Lead Free and RoHS compliant  
Applications  
Netcom Applications  
Server Applications  
Computing Peripheral Voltage Regulators  
General DC-DC Converters  
Storage Applications  
Embedded Telecom Systems  
Distributed Point of Load Power Architectures  
Fig. 1. Typical application diagram  
1
Rev 9.0  
PD-97506  
IR3856WMPbF  
ABSOLUTE MAXIMUM RATINGS  
(Voltages referenced to GND unless otherwise specified)  
Vin ……………………………………….……………. -0.3V to 25V  
PVcc, Vcc ……………….……..….……..……….…… -0.3V to 8V (Note2)  
Boot  
SW  
……………………………………..……….…. -0.3V to 33V  
…………………………………………..……… -0.3V to 25V(DC), -4V to 25V(AC, 100ns)  
Boot to SW ……..…………………………….…..….. -0.3V to Vcc+0.3V (Note1)  
OCSet ………………………………………….……. -0.3V to 30V (Max 30mA)  
Input / output Pins ……………………………….. ... -0.3V to Vcc+0.3V (Note1)  
PGND to GND ……………...………………………….. -0.3V to +0.3V  
Storage Temperature Range ................................... -55°C To 150°C  
Junction Temperature Range ................................... -40°C To 150°C (Note2)  
ESD Classification …………………………… ……… JEDEC Class 1C  
Moisture sensitivity level………………...………………JEDEC Level 3@260 °C (Note5)  
Note1: Must not exceed 8V  
Note2: Vcc must not exceed 7.5V for Junction Temperature between -10oC and -40oC  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to  
the device. These are stress ratings only and functional operation of the device at these or any other  
conditions beyond those indicated in the operational sections of the specifications are not implied.  
PACKAGE INFORMATION  
4mm x 5mm POWER QFN  
θJA  
θJA  
= 45o C / W *  
= 45o C / W *  
( Sync _ FET )  
( Ctrl _ FET )  
11  
12  
SW  
13  
VIN  
θJ-PCB = 2o C / W  
PGnd  
* Exposed pads on underside  
are connected to copper  
pads of 4-layer (2 oz.) PCB  
board design  
14  
PVcc  
VCC  
Boot  
10  
17  
Gnd  
Enable  
9
8
15  
16  
PGood  
Seq  
1
4
7
2
3
5
6
Fb  
NC COMP Gnd Rt SS/SD OCSet  
ORDERING INFORMATION  
PACKAGE  
PACKAGE  
PIN COUNT  
PARTS PER  
REEL  
DESIGNATOR  
DESCRIPTION  
M
M
IR3856WMTRPbF  
IR3856WMTR1PbF  
17  
17  
4000  
750  
2
Rev 9.0  
PD-97506  
IR3856WMPbF  
Block Diagram  
Fig. 2. Simplified block diagram of the IR3856W  
3
Rev 9.0  
PD-97506  
IR3856WMPbF  
Pin Description  
Pin Name  
Description  
1
Fb  
Inverting input to the error amplifier. This pin is connected directly to the  
output of the regulator via resistor divider to set the output voltage and  
provide feedback to the error amplifier.  
2
3
NC  
No connect  
Comp  
Output of error amplifier. An external resistor and capacitor network is  
typically connected from this pin to Fb pin to provide loop  
compensation.  
4
5
6
Gnd  
Rt  
Signal ground for internal reference and control circuitry.  
Set the switching frequency. Connect an external resistor from this pin  
to Gnd to set the switching frequency.  
SS/SD  
Soft start / shutdown. This pin provides user programmable soft-start  
function. Connect an external capacitor from this pin to Gnd to set the  
start up time of the output voltage. The converter can be shutdown by  
pulling this pin below 0.3V.  
7
8
OCSet  
PGood  
VCC  
Current limit set point. A resistor from this pin to SW pin will set the  
current limit threshold.  
Power Good status pin. Output is open drain. Connect a pull up resistor  
from this pin to Vcc.  
9
This pin powers the internal IC. A minimum of 1uF high frequency  
capacitor must be connected from this pin to Analog ground (AGnd).  
10  
11  
12  
13  
PVcc  
PGnd  
SW  
This pin powers the drivers. A minimum of 1uF high frequency capacitor  
must be connected from this pin to the power ground (PGnd).  
Power Ground. This pin serves as a separated ground for the MOSFET  
drivers and should be connected to the system’s power ground plane.  
Switch node. This pin is connected to the output inductor.  
VIN  
Input voltage connection pin.  
14  
15  
Boot  
Supply voltage for high side driver. A 0.1uF capacitor must be  
connected from this pin to SW.  
Enable pin to turn on and off the device. Use two external resistors to  
set the turn on threshold (see Enable section). Connect this pin to Vcc if  
it is not used.  
Enable  
16  
17  
Seq  
Gnd  
Sequence pin. Use two external resistors to set Simultaneous Power up  
sequencing. If this pin is not used connect to Vcc.  
Signal ground for internal reference and control circuitry.  
4
Rev 9.0  
PD-97506  
IR3856WMPbF  
Recommended Operating Conditions  
Symbol  
Definition  
Min  
Max  
Units  
Vin  
P Vcc, Vcc  
Boot to SW  
Vo  
Io  
Input Voltage  
Supply Voltage  
Supply Voltage  
Output Voltage  
1.5  
4.5  
4.5  
0.7  
0
16  
5.5  
5.5  
0.9*Vin  
6
V
Output Current  
A
Fs  
Tj  
Switching Frequency  
Junction Temperature  
225  
-40  
1650  
125  
kHz  
oC  
Electrical Specifications  
Unless otherwise specified, these specification apply over 4.5V< PVcc=Vcc<5.5V, Vin=12V  
0oC<Tj< 125oC. Typical values are specified at Ta = 25oC.  
Parameter  
Power Loss  
Symbol  
Test Condition  
Min  
TYP  
MAX  
Units  
Power Loss  
Plo ss  
Vcc=5V, Vin=12V, Vo=1.8V, Io=6A,  
1.3  
W
Fs=600kHz, L=0.82uH, Note4  
MOSFET Rds(on)  
Top Switch  
Rds(on)_Top  
Rds(on)_Bot  
VBoot -Vsw =5V, ID=6A, Tj=25oC  
Vcc=5V, ID=6A, Tj=25oC  
22.6  
14.3  
29.0  
19  
mΩ  
Bottom Switch  
Reference Voltage  
Feedback Voltage  
Accuracy  
VFB  
0.7  
V
0oC<Tj<125oC  
-1.0  
+1.0  
+2.0  
%
-40oC<Tj<125oC, Note3  
+2.0  
Supply Current  
VCC Supply Current (Standby)  
Vcc Supply Current (Dyn)  
PVCC Supply Current (Standby)  
PVcc Supply Current (Dyn)  
ICC(Standby)  
ICC(Dyn)  
IPCC(Standby)  
IPCC(Dyn)  
SS=0V, No Switching, Enable low  
500  
6
μA  
SS=3V, Vcc=5V, Fs=500kHz  
Enable high  
3
7
mA  
SS=0V, No Switching, Enable low  
μA  
SS=3V, PVcc=5V, Fs=500kHz  
Enable high  
mA  
Under Voltage Lockout  
VCC-Start-Threshold  
VCC_UVLO_Start  
VCC_UVLO_Stop  
Enable_UVLO_Start  
Enable_UVLO_Stop  
Ien  
Vcc Rising Trip Level  
Vcc Falling Trip Level  
Supply ramping up  
Supply ramping down  
Enable=3.3V  
3.95  
3.65  
1.14  
0.9  
4.15  
3.85  
1.2  
4.35  
4.05  
1.36  
1.06  
15  
VCC-Stop-Threshold  
Enable-Start-Threshold  
Enable-Stop-Threshold  
Enable leakage current  
V
1.0  
μA  
5
Rev 9.0  
PD-97506  
IR3856WMPbF  
Electrical Specifications (continued)  
Unless otherwise specified, these specifications apply over 4.5V< PVcc=Vcc<5.5V, Vin=12V  
0oC<Tj< 125oC. Typical values are specified at Ta = 25oC.  
Parameter  
Oscillator  
Symbol  
Test Condition  
Min  
TYP  
MAX  
Units  
Rt Voltage  
0.665  
225  
0.7  
0.735  
275  
V
Frequency  
FS  
Rt=59K  
250  
500  
Rt=28.7K  
450  
550  
kHz  
Rt=9.31K, Note4  
1350  
1500  
1.8  
1650  
Ramp Amplitude  
Ramp Offset  
Vramp  
Note4  
Vp-p  
V
Ramp (os)  
Dmin(ctrl)  
Note4  
0.6  
50  
Min Pulse Width  
Fixed Off Time  
Max Duty Cycle  
Note4  
ns  
%
Note4  
130  
200  
+10  
Dmax  
Fs=250kHz  
92  
Error Amplifier  
Input Offset Voltage  
Vos  
Vfb-Vseq,  
-10  
0
mV  
Vseq=0.8V  
Input Bias Current  
Input Bias Current  
Sink Current  
IFb(E/A)  
IVp(E/A)  
Isink(E/A)  
Isource(E/A)  
SR  
-1  
-1  
+1  
+1  
μA  
0.40  
8
0.85  
10  
1.2  
13  
mA  
Source Current  
Slew Rate  
Note4  
7
12  
20  
V/μs  
MHz  
dB  
Gain-Bandwidth Product  
DC Gain  
GBWP  
Note4  
20  
100  
3.4  
30  
40  
Gain  
Note4  
110  
3.5  
120  
120  
3.75  
220  
1
Maximum Voltage  
Minimum Voltage  
Common Mode Voltage  
Vmax(E/A)  
Vmin(E/A)  
Vcc=4.5V  
V
mV  
V
Note4  
0
Soft Start/SD  
Soft Start Current  
ISS  
Vss(clamp)  
SD  
Source  
14  
20  
26  
3.3  
0.3  
μA  
Soft Start Clamp Voltage  
2.7  
3.0  
V
Shutdown Output  
Threshold  
Over Current Protection  
OCSET Current  
IOCSET  
Fs=250kHz  
Fs=500kHz  
Fs=1500kHz  
Note4  
20.8  
43  
23.6  
48.8  
154  
0
26.4  
54.6  
172  
+10  
μA  
136  
-10  
OC Comp Offset Voltage  
SS off time  
VOFFSET  
mV  
SS_Hiccup  
4096  
Cycles  
Bootstrap Diode  
Forward Voltage  
I(Boot)=30mA  
180  
5
260  
10  
470  
30  
mV  
ns  
Deadband time  
Note4  
6
Rev 9.0  
PD-97506  
IR3856WMPbF  
Electrical Specifications  
Unless otherwise specified, these specifications apply over 4.5V< PVcc=Vcc<5.5V, Vin=12V  
0oC<Tj< 125oC. Typical values are specified at Ta = 25oC.  
Parameter  
SYM  
Test Condition  
Min  
TYP  
MAX  
Units  
Thermal Shutdown  
Thermal Shutdown  
Note4  
Note4  
140  
20  
oC  
Hysteresis  
Power Good  
Power Good upper  
Threshold  
Upper Threshold  
Delay  
Power Good lower  
Threshold  
Lower Threshold  
Delay  
Delay Comparator  
Threshold  
VPG(upper)  
VPG(upper)_Dly  
VPG(lower)  
Fb Rising  
Fb Rising  
Fb Falling  
Fb Falling  
0.770  
0.560  
0.810  
256/Fs  
0.6  
0.840  
0.630  
V
s
V
VPG(lower)_Dly  
PG(Delay)  
256/Fs  
2.1  
s
Relative to charge voltage, SS rising  
2
2.3  
V
Delay Comparator  
Hysteresis  
Delay(hys)  
Note4  
260  
300  
340  
mV  
PGood Voltage Low  
PG(voltage)  
Ileakage  
IPGood=-5mA  
0.5  
10  
V
Leakage Current  
0
μA  
Switch Node  
SW Bias Current  
SW=0V, Enable=0V  
Isw  
μA  
6
SW=0V,Enable=high,SS=3V,Vseq=0V  
, Note4  
Note3: Cold temperature performance is guaranteed via correlation using statistical quality control. Not tested in production.  
Note4: Guaranteed by Design but not tested in production.  
Note5: Upgrade to industrial/MSL2 level applies from date codes 1227 (marking explained on application note AN1132 page 2).  
Products with prior date code of 1227 are qualified with MSL3 for Consumer market.  
7
Rev 9.0  
PD-97506  
IR3856WMPbF  
TYPICAL OPERATING CHARACTERISTICS (-40oC - 125oC) Fs=500 kHz  
Icc(Dyn)  
Icc(Standby)  
5
4
3
2
1
290  
270  
250  
230  
210  
190  
170  
150  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temp[oC]  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temp[oC]  
FREQUENCY  
IOCSET(500kHz)  
550  
540  
530  
520  
510  
500  
490  
480  
470  
460  
450  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
Temp[oC]  
Vcc(UVLO) Stop  
60  
80  
100  
120  
Temp[oC]  
Vcc(UVLO) Start  
4.05  
4.00  
3.95  
3.90  
3.85  
3.80  
3.75  
3.70  
3.65  
4.35  
4.30  
4.25  
4.20  
4.15  
4.10  
4.05  
4.00  
3.95  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temp[oC]  
Temp[oC]  
Enable(UVLO) Stop  
Enable(UVLO) Start  
1.36  
1.34  
1.32  
1.30  
1.28  
1.26  
1.24  
1.22  
1.20  
1.18  
1.16  
1.14  
1.06  
1.04  
1.02  
1.00  
0.98  
0.96  
0.94  
0.92  
0.90  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100 120  
Temp[oC]  
Vfb  
Temp[oC]  
ISS  
26.0  
24.0  
22.0  
20.0  
18.0  
16.0  
14.0  
711  
706  
701  
696  
691  
686  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temp[oC]  
Temp [oC]  
8
Rev 9.0  
PD-97506  
IR3856WMPbF  
TYPICAL OPERATING CHARACTERISTICS (-40oC - 125oC) Fs=500 kHz  
Ipcc(Standby)  
Ipcc(Dyn)  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temp[oC]  
Temp[oC]  
Rdson of MOSFETs Over Temperature at Vcc=5V  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
Temperature [°C]  
Sync-FET  
Ctrl-FET  
9
Rev 9.0  
PD-97506  
IR3856WMPbF  
Typical Efficiency and Power Loss Curves  
Vin=12V, Vcc=5V, Io=1A-6A, Fs=600kHz, Room Temperature, No Air Flow  
The table below shows the inductors used for each of the output voltages  
in the efficiency measurement.  
Vo (V)  
0.9  
1.0  
1.1  
1.2  
1.5  
1.8  
2.5  
3.3  
L (uH) P/N  
DCR (mOhm)  
0.68  
0.68  
0.82  
0.82  
1.0  
PCMB065T-R68MS  
3.9  
3.9  
4.6  
4.6  
4.7  
4.7  
6.7  
6.7  
11.2  
PCMB065T-R68MS  
IHLP2525EZERR82M  
IHLP2525EZERR82M  
SPM6550T-1R0M100A  
SPM6550T-1R0M100A  
PCMB065T-1R5MS  
PCMB065T-1R5MS  
PCMB065T-2R2MS  
1.0  
1.5  
1.5  
2.2  
5.0  
96  
94  
92  
90  
88  
86  
84  
82  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
Load Current (A)  
0.9V  
1.0V  
1.1V  
1.2V  
1.5V  
1.8V  
2.5V  
3.3V  
5.0V  
1.9  
1.7  
1.5  
1.3  
1.1  
0.9  
0.7  
0.5  
0.3  
0.1  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
Load Current (A)  
0.9V  
1.0V  
1.1V  
1.2V  
1.5V  
1.8V  
2.5V  
3.3V  
5.0V  
10  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Typical Efficiency and Power Loss Curves  
Vin=5V, Vcc=5V, Io=1A-6A, Fs=600kHz, Room Temperature, No Air Flow  
The table below shows the inductors used for each of the output voltages  
in the efficiency measurement.  
Vo (V)  
0.7  
0.75  
0.9  
1.0  
1.1  
1.2  
1.5  
1.8  
2.5  
L (uH) P/N  
DCR (mOhm)  
0.56  
0.56  
0.56  
0.56  
0.68  
0.68  
0.68  
0.82  
0.82  
0.82  
IHLP2525EZERR56M  
3.4  
3.4  
3.4  
3.4  
3.9  
3.9  
3.9  
4.6  
4.6  
4.6  
IHLP2525EZERR56M  
IHLP2525EZERR56M  
IHLP2525EZERR56M  
PCMB065T-R68MS  
PCMB065T-R68MS  
PCMB065T-R68MS  
IHLP2525EZERR82M  
IHLP2525EZERR82M  
IHLP2525EZERR82M  
3.3  
96  
94  
92  
90  
88  
86  
84  
82  
80  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
Load Current (A)  
0.7V  
0.75V  
0.9V  
1.0V  
1.1V  
1.2V  
1.5V  
1.8V  
2.5V  
3.3V  
1.3  
1.1  
0.9  
0.7  
0.5  
0.3  
0.1  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
Load Current (A)  
0.7Vout  
1.2Vout  
0.75Vout  
1.5Vout  
0.9Vout  
1.8Vout  
1.0Vout  
2.5Vout  
1.1Vout  
3.3Vout  
11  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Circuit Description  
THEORY OF OPERATION  
Introduction  
If the input to the Enable pin is derived from the  
bus voltage by a suitably programmed resistive  
divider, it can be ensured that the IR3856W does  
not turn on until the bus voltage reaches the  
desired level. Only after the bus voltage reaches  
or exceeds this level will the voltage at Enable  
pin exceed its threshold, thus enabling the  
IR3856W. Therefore, in addition to being a logic  
input pin to enable the IR3856W, the Enable  
feature, with its precise threshold, also allows the  
user to implement an Under-Voltage Lockout for  
the bus voltage Vin. This is desirable particularly  
for high output voltage applications, where we  
might want the IR3856W to be disabled at least  
until Vin exceeds the desired output voltage level.  
The IR3856W uses a PWM voltage mode control  
scheme with external compensation to provide  
good noise immunity and maximum flexibility in  
selecting inductor values and capacitor types.  
The switching frequency is programmable from  
250kHz to 1.2MHz and provides the capability of  
optimizing the design in terms of size and  
performance.  
IR3856W provides precisely regulated output  
voltage programmed via two external resistors  
from 0.7V to 0.9*Vin.  
The IR3856W operates with an external bias  
supply from 4.5V to 5.5V, allowing an extended  
operating input voltage range from 1.5V to 21V.  
The device utilizes the on-resistance of the low  
side MOSFET as current sense element, this  
method enhances the converter’s efficiency and  
reduces cost by eliminating the need for external  
current sense resistor.  
IR3856W includes two low Rds(on) MOSFETs  
using IR’s HEXFET technology. These are  
specifically designed for high efficiency  
applications.  
Fig. 3a. Normal Start up, Device turns on  
when the Bus voltage reaches 10.2V  
Figure 3b. shows the recommended start-up  
sequence for the non-sequenced operation of  
IR3856W.  
Under-Voltage Lockout and POR  
The under-voltage lockout circuit monitors the  
input supply Vcc and the Enable input. It assures  
that the MOSFET driver outputs remain in the off  
state whenever either of these two signals drop  
below the set thresholds. Normal operation  
resumes once Vcc and Enable rise above their  
thresholds.  
The POR (Power On Ready) signal is generated  
when all these signals reach the valid logic level  
(see system block diagram). When the POR is  
asserted the soft start sequence starts (see soft  
start section).  
Enable  
The Enable features another level of flexibility for  
start up. The Enable has precise threshold which  
is internally monitored by Under-Voltage Lockout  
(UVLO) circuit. Therefore, the IR3856W will turn  
on only when the voltage at the Enable pin  
exceeds this threshold, typically, 1.2V.  
Fig. 3b. Recommended startup sequence,  
Non-Sequenced operation  
Figure 3c. shows the recommended startup  
sequence for sequenced operation of IR3856W  
12  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Fig. 5. Pre-Bias startup pulses  
Soft-Start  
The IR3856W has a programmable soft-start to  
control the output voltage rise and to limit the  
current surge at the start-up. To ensure correct  
start-up, the soft-start sequence initiates when  
the Enable and Vcc rise above their UVLO  
thresholds and generate the Power On Ready  
(POR) signal. The internal current source  
(typically 20uA) charges the external capacitor  
Css linearly from 0V to 3V. Figure 6 shows the  
waveforms during the soft start.  
Fig. 3c. Recommended startup sequence,  
Sequenced operation  
Pre-Bias Startup  
IR3856W is able to start up into pre-charged  
output, which prevents oscillation and  
disturbances of the output voltage.  
The output starts in asynchronous fashion and  
keeps the synchronous MOSFET off until the first  
gate signal for control MOSFET is generated.  
Figure 4 shows a typical Pre-Bias condition at  
start up.  
The start up time can be estimated by:  
(
1.4- 0.7  
)
*CSS  
Tstart  
=
- - - - - - - - - - - - - - - - - - - - (1)  
20μA  
The synchronous MOSFET always starts with a  
narrow pulse width and gradually increases its  
duty cycle with a step of 25%, 50%, 75% and  
100% until it reaches the steady state value. The  
number of these startup pulses for the  
synchronous MOSFET is internally programmed.  
Figure 5 shows a series of 32, 16, 8 startup  
pulses.  
During the soft start the OCP is enabled to  
protect the device for any short circuit and over  
current condition.  
Fig. 4. Pre-Bias startup  
Fig. 6. Theoetical operation waveforms  
uring soft-start  
13  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Operating Frequency  
1400  
IOCSet (μA) =  
...................................(2)  
The switching frequency can be programmed  
between 250kHz – 1200kHz by connecting an  
external resistor from Rt pin to Gnd. Table 1  
tabulates the oscillator frequency versus Rt.  
Rt (kΩ)  
Table 1. shows IOCSet at different switching  
frequencies. The internal current source  
develops a voltage across ROCSet. When the low  
side MOSFET is turned on, the inductor current  
flows through the Q2 and results in a voltage at  
OCSet which is given by:  
Table 1. Switching Frequency and IOCSet vs.  
External Resistor (Rt)  
VOCSet = (IOCSet ROCSet )(RDS(on) IL )..........(3)  
Rt (k)  
47.5  
35.7  
28.7  
23.7  
20.5  
17.8  
15.8  
14.3  
12.7  
11.5  
Fs (kHz)  
300  
Iocset (μA)  
29.4  
39.2  
48.7  
59.07  
68.2  
78.6  
88.6  
97.9  
110.2  
121.7  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
Fig. 7. Connection of over current sensing resistor  
Shutdown  
The IR3856W can be shutdown by pulling the  
Enable pin below its 1 V threshold. This will tri-  
state both, the high side driver as well as the low  
side driver. Alternatively, the output can be  
shutdown by pulling the soft-start pin below 0.3V.  
Normal operation is resumed by cycling the  
voltage at the Soft Start pin.  
An over current is detected if the OCSet pin goes  
below ground. Hence, at the current limit  
threshold, VOCset=0. Then, for a current limit  
setting ILimit, ROCSet is calculated as follows:  
R
DS(on) * ILimit  
ROCSet  
=
......................(4)  
IOCSet  
An overcurrent detection trips the OCP  
comparator, latches OCP signal and cycles the  
soft start function in hiccup mode.  
Over-Current Protection  
The over current protection is performed by  
sensing current through the RDS(on) of low side  
MOSFET. This method enhances the converter’s  
efficiency and reduces cost by eliminating a  
current sense resistor. As shown in figure 7, an  
external resistor (ROCSet) is connected between  
OCSet pin and the switch node (SW) which sets  
the current limit set point.  
The hiccup is performed by shorting the soft-start  
capacitor to ground and counting the number of  
switching cycles. The Soft Start pin is held low  
until 4096 cycles have been completed. The  
OCP signal resets and the converter recovers.  
After every soft start cycle, the converter stays in  
this mode until the overload or short circuit is  
removed.  
An internal current source sources current (IOCSet  
) out of the OCSet pin. This current is a function  
of the switching frequency and hence, of Rt.  
The OCP circuit starts sampling current typically  
160 ns after the low gate drive rises to about 3V.  
This delay functions to filter out switching noise.  
14  
Rev 9.0  
PD-97506  
IR3856WMPbF  
1.5V <Vin<16V  
4.5V <Vcc<5.5V  
Thermal Shutdown  
Temperature sensing is provided inside  
IR3856W. The trip threshold is typically set to  
140oC. When trip threshold is exceeded, thermal  
shutdown turns off both MOSFETs and  
discharges the soft start capacitor.  
Enable  
Vin  
Boot  
SW  
PVcc  
Vcc  
Vo(master)  
PGood  
PGood  
OCSet  
Fb  
RA  
Automatic restart is initiated when the sensed  
temperature drops within the operating range.  
There is a 20oC hysteresis in the thermal  
shutdown threshold.  
Seq  
Rt  
RB  
Comp  
PGnd  
SS/ SD  
Gnd  
Output Voltage Sequencing  
1.5V <Vin<16V  
4.5V <Vcc<5.5V  
The  
IR3856W  
can  
accommodate  
user  
programmable sequencing using Seq, Enable  
and Power Good pins.  
Enable  
Vin  
Boot  
PVcc  
Vcc  
Vo(slave)  
Vo(master)  
PGood  
RE  
SW  
PGood  
OCSet  
Fb  
RC  
Vo1  
Vo2  
Seq  
Rt  
RF  
RD  
Comp  
PGnd  
SS/ SD  
Gnd  
Simultaneous Powerup  
Fig. 8b. Application Circuit for Simultaneous  
Sequencing  
Fig. 8a. Simultaneous Power-up of the slave  
with respect to the master.  
Power Good Output  
The IC continually monitors the output voltage via  
Feedback (Fb pin). The feedback voltage forms  
an input to a window comparator whose upper  
and lower thresholds are 0.805V and 0.595V  
respectively. Hence, the Power Good signal is  
flagged when the Fb pin voltage is within the  
PGood window, i. e. between 0.595V to 0.805V,  
as shown in Fig .9. The PGood pin is open drain  
and it needs to be externally pulled high. High  
state indicates that output is in regulation. Fig. 9a  
shows the PGood timing diagram for non-  
tracking operation. In this case, during startup,  
PGood goes high after the SS voltage reaches  
2.1V if the Fb voltage is within the PGood  
comparator window. Fig. 9a. and Fig 9.b. also  
show a 256 cycle delay between the Fb voltage  
entering within the thresholds defined by the  
PGood window and PGood going high.  
Through these pins, voltage sequencing such as  
simultaneous  
and  
sequential  
can  
be  
implemented. Figure 8. shows simultaneous  
sequencing configurations. In simultaneous  
power-up, the voltage at the Seq pin of the slave  
reaches 0.7V before the Fb pin of the master. For  
RE/RF =RC/RD, therefore, the output voltage of  
the slave follows that of the master until the  
voltage at the Seq pin of the slave reaches 0.7 V.  
After the voltage at the Seq pin of the slave  
exceeds 0.85V, the internal 0.7V reference of  
the slave dictates its output voltage.  
It is recommended that irrespective of the  
sequencing configuration used, the input voltage  
should be allowed to come up to its nominal  
value first, followed by Vcc and Enable, before the  
sequencing signal is applied.  
For non-sequenced operation, the Seq pin  
should be tied to a voltage greater than 0.85V,  
such as 3.3V or Vcc. Again, the input voltage  
should be allowed to come up before Vcc and  
Enable.  
15  
Rev 9.0  
PD-97506  
IR3856WMPbF  
TIMING DIAGRAM OF PGOOD FUNCTION  
Fig.9a IR3856W Non-Tracking Operation (Seq=Vcc)  
Fig.9b IR3856W Tracking Operation  
16  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Minimum on time Considerations  
Maximum Duty Ratio Considerations  
The minimum ON time is the shortest amount of  
time for which the Control FET may be reliably  
turned on, and this depends on the internal  
timing delays. For the IR3856W, the typical  
minimum on-time is specified as 50 ns.  
Any design or application using the IR3856W  
must ensure operation with a pulse width that is  
higher than this minimum on-time and preferably  
higher than 100 ns. This is necessary for the  
circuit to operate without jitter and pulse-  
skipping, which can cause high inductor current  
ripple and high output voltage ripple.  
A fixed off-time of 200 ns maximum is specified  
for the IR3856W. This provides an upper limit on  
the operating duty ratio at any given switching  
frequency. It is clear that, higher the switching  
frequency, the lower is the maximum duty ratio at  
which the IR3856W can operate. To allow a  
margin of 50 ns, the maximum operating duty  
ratio in any application using the IR3856W  
should still accommodate about 250 ns off-time.  
Fig 10. shows a plot of the maximum duty ratio  
v/s the switching frequency, with 250 ns off-time.  
95  
90  
85  
80  
75  
70  
D
ton  
=
Fs  
Vout  
Vin × Fs  
=
In any application that uses the IR3856W, the  
following condition must be satisfied:  
ton(min) ton  
Vout  
ton(min)  
Vin × Fs  
Vout  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
Switching Frequency (kHz)  
Vin × Fs ≤  
ton(min)  
The minimum output voltage is limited by the  
reference voltage and hence Vout(min) = 0.7 V.  
Therefore, for Vout(min) = 0.7 V,  
Fig. 10. Maximum duty cycle v/s switching  
frequency.  
Vout(min)  
Vin × Fs  
ton(min)  
0.7 V  
Vin × Fs ≤  
= 7 ×106 V/s  
100 ns  
Therefore, at the maximum recommended input  
voltage 21V and minimum output voltage, the  
converter should be designed at a switching  
frequency that does not exceed 330 kHz.  
Conversely, for operation at the maximum  
recommended operating frequency 1.2 MHz and  
minimum output voltage, any voltage above  
5.83V may not be stepped down reliably without  
pulse-skipping.  
17  
Rev 9.0  
PD-97506  
IR3856WMPbF  
when an external resistor divider is connected to  
the output as shown in figure 11.  
Equation (7) can be rewritten as:  
Application Information  
Design Example:  
The following example is a typical application for  
IR3856W. The application circuit is shown on  
page 24.  
Vref  
R9 = R8 ∗  
...............................(8)  
VoVref  
Vin =12 V (13.2Vmax)  
Vo =1.8 V  
For the calculated values of R8 and R9 see  
feedback compensation section.  
Io =6 A  
VOUT  
ΔVo 54mV  
Fs = 600kHz  
IR3856W  
R8  
Fb  
R9  
Enabling the IR3856W  
As explained earlier, the precise threshold of  
the Enable lends itself well to implementation of  
a UVLO for the Bus Voltage.  
Fig. 11. Typical application of the IR3856W for  
programming the output voltage  
Soft-Start Programming  
Vin  
The soft-start timing can be programmed by  
selecting the soft-start capacitance value. From  
(1), for a desired start-up time of the converter,  
the soft start capacitor can be calculated by  
using:  
IR3856W  
R1  
Enable  
R2  
CSS (μF) = Tstart ( ms )× 0.02857 .......... (9)  
Where Tstart is the desired start-up time (ms).  
For a start-up time of 3.5ms, the soft-start  
capacitor will be 0.099μF. Choose a 0.1μF  
ceramic capacitor.  
For a typical Enable threshold of VEN = 1.2 V  
R2  
Vin(min)  
*
= VEN = 1.2.......... (5)  
R1 + R2  
Bootstrap Capacitor Selection  
VEN  
R2 = R1  
..........(6)  
Vin( min ) VEN  
To drive the Control FET, it is necessary to  
supply a gate voltage at least 4V greater than  
the voltage at the SW pin, which is connected  
the source of the Control FET . This is achieved  
by using a bootstrap configuration, which  
comprises the internal bootstrap diode and an  
external bootstrap capacitor (C6), as shown in  
Fig. 12. The operation of the circuit is as follows:  
When the lower MOSFET is turned on, the  
capacitor node connected to SW is pulled down  
to ground. The capacitor charges towards Vcc  
through the internal bootstrap diode, which has a  
forward voltage drop VD. The voltage Vc across  
the bootstrap capacitor C6 is approximately  
given as  
For a Vin (min)=10.2V, R1=49.9K and R2=7.5K is a  
good choice.  
Programming the frequency  
For Fs = 600 kHz, select Rt = 23.7 k, using  
Table. 1.  
Output Voltage Programming  
Output voltage is programmed by reference  
voltage and external voltage divider. The Fb pin  
is the inverting input of the error amplifier, which  
is internally referenced to 0.7V. The divider is  
ratioed to provide 0.7V at the Fb pin when the  
output is at its desired value. The output voltage  
is defined by using the following equation:  
Vc Vcc VD ..........................(10)  
When the upper MOSFET turns on in the next  
cycle, the capacitor node connected to SW rises  
to the bus voltage Vin. However, if the value of  
C6 is appropriately chosen,  
R8  
R9  
Vo =Vref 1+  
................................(7)  
18  
Rev 9.0  
PD-97506  
IR3856WMPbF  
the voltage Vc across C6 remains approximately  
unchanged and the voltage at the Boot pin  
becomes  
advisable to have 2x10uF 25V ceramic capacitors  
C3216X5R1E106M from TDK. In addition to  
these, although not mandatory, a 1X330uF, 25V  
SMD capacitor EEV-FK1E331P may also be used  
as a bulk capacitor and is recommended if the  
input power supply is not located close to the  
converter.  
VBoot Vin +Vcc VD ........................................(11)  
Inductor Selection  
The inductor is selected based on output power,  
operating frequency and efficiency requirements.  
A low inductor value causes large ripple current,  
resulting in the smaller size, faster response to a  
load transient but poor efficiency and high output  
noise. Generally, the selection of the inductor  
value can be reduced to the desired maximum  
ripple current in the inductor  
point is usually found between 20% and 50%  
ripple of the output current.  
. The optimum  
(Δi)  
Fig. 12. Bootstrap circuit to generate  
Vc voltage  
For the buck converter, the inductor value for the  
desired operating ripple current can be  
determined using the following relation:  
A bootstrap capacitor of value 0.1uF is suitable  
for most applications.  
For applications with 21V input voltage, the switch  
node may ring above the 25V absolute maximum  
voltage rating. To prevent this, in addition to  
using best layout practices, it may be necessary  
to provide a 10ohm resistor in series with the boot  
capacitor.  
Δi  
Δt  
1
Vin Vo = L ; Δt = D ∗  
Fs  
............................... (14)  
Vo  
L =  
(
Vin Vo ∗  
)
Vin ∗ Δi * Fs  
Where:  
Vin = Maximum input voltage  
Vo = Output Voltage  
Δi = Inductorripple current  
Fs= Switching frequency  
Δt = Turn on time  
Input Capacitor Selection  
The ripple current generated during the on time of  
the upper MOSFET should be provided by the  
input capacitor. The RMS value of this ripple is  
expressed by:  
D = Duty cycle  
If Δi 42%(Io), then the output inductor is  
calculated to be 1.01μH. Select L=1 μH.  
IRMS =Io D(1D) ........................(12)  
Vo  
The SPM6550T-1R0M from TDK provides a  
compact inductor suitable for this application  
D =  
.............................(13)  
Vin  
Where:  
D is the Duty Cycle  
IRMS is the RMS value of the input capacitor  
current.  
Io is the output current.  
For Io=6A and D = 0.15, the IRMS = 2.14 A.  
Ceramic capacitors are recommended due to  
their peak current capabilities. They also feature  
low ESR and ESL at higher frequency which  
enables better efficiency. For this application, it is  
19  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Output Capacitor Selection  
The output LC filter introduces a double pole,  
–40dB/decade gain slope above its corner  
resonant frequency, and a total phase lag of 180o  
(see figure 13). The resonant frequency of the LC  
filter is expressed as follows:  
The voltage ripple and transient requirements  
determine the output capacitors type and values.  
The criteria is normally based on the value of the  
Effective Series Resistance (ESR). However the  
actual capacitance value and the Equivalent Series  
Inductance (ESL)  
components. These components can be described  
as  
are other contributing  
1
FLC  
=
................................(16)  
2π Lo Co  
ΔVo = ΔVo(ESR) + ΔVo(ESL) + ΔVo(C)  
Figure 13 shows gain and phase of the LC filter.  
Since we already have 180o phase shift from the  
output filter alone, the system runs the risk of  
being unstable.  
ΔVo(ESR) = ΔIL * ESR  
V
Vo  
in  
ΔVo(ESL) = ⎜  
* ESL  
L
Gain  
0 dB  
Phase  
00  
.........................(15)  
ΔIL  
8 * Co * Fs  
ΔVo(C)  
=
-40dB/decade  
Frequency  
ΔVo = Output voltage ripple  
ΔIL = Inductor ripple current  
-1800  
Frequency  
FLC  
FLC  
Since the output capacitor has a major role in the  
overall performance of the converter and  
determines the result of transient response,  
selection of the capacitor is critical. The  
IR3856W can perform well with all types of  
capacitors.  
Fig. 13. Gain and Phase of LC filter  
The IR3856W uses a voltage-type error amplifier  
with high-gain (110dB) and wide-bandwidth. The  
output of the amplifier is available for DC gain  
control and AC phase compensation.  
As a rule, the capacitor must have low enough  
ESR to meet output ripple and load transient  
requirements.  
The error amplifier can be compensated either in  
type II or type III compensation.  
The goal for this design is to meet the voltage  
ripple requirement in the smallest possible  
capacitor size. Therefore it is advisable to select  
ceramic capacitors due to their low ESR and ESL  
and small size. Four of the Panasonic ECJ-  
2FB0J226ML (22uF, 6.3V, 3mOhm) capacitors is  
a good choice.  
Local feedback with Type II compensation is  
shown in Fig. 14.  
This method requires that the output capacitor  
should have enough ESR to satisfy stability  
requirements. In general the output capacitor’s  
ESR generates a zero typically at 5kHz to 50kHz  
which is essential for an acceptable phase  
margin.  
Feedback Compensation  
The IR3856W is a voltage mode controller. The  
control loop is a single voltage feedback path  
including error amplifier and error comparator. To  
achieve fast transient response and accurate  
output regulation, a compensation circuit is  
necessary. The goal of the compensation  
network is to provide a closed-loop transfer  
function with the highest 0 dB crossing frequency  
and adequate phase margin (greater than 45o).  
The ESR zero of the output capacitor is  
expressed as follows:  
1
FESR  
=
...........................(17)  
2 π*ESR*Co  
20  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Where:  
Vin = Maximum Input Voltage  
Vosc = Oscillator Ramp Voltage  
Fo = Crossover Frequency  
VOUT  
ZIN  
CPOLE  
FESR = Zero Frequency of the Output Capacitor  
FLC = Resonant Frequency of the Output Filter  
R8 = Feedback Resistor  
R3  
C4  
R8  
Zf  
To cancel one of the LC filter poles, place the  
zero before the LC filter resonant frequency pole:  
Fb  
Ve  
E/A  
R9  
Comp  
Fz = 75%F  
LC  
VREF  
Gain(dB)  
1
Fz = 0.75*  
.....................................(22)  
H(s) dB  
2π Lo *Co  
Use equations (20), (21) and (22) to calculate  
C4.  
One more capacitor is sometimes added in  
parallel with C4 and R3. This introduces one  
more pole which is mainly used to suppress the  
switching noise.  
FPOLE Frequency  
FZ  
Fig. 14. Type II compensation network  
and its asymptotic gain plot  
The additional pole is given by:  
1
FP =  
.................................(23)  
The transfer function (Ve/Vo) is given by:  
C4 *CPOLE  
C4 +CPOLE  
2π *R3 *  
Ve  
Vo  
Zf  
1+sRC4  
3
= H(s) = −  
= −  
.....(18)  
ZIN  
sRC4  
8
The pole sets to one half of the switching  
frequency which results in the capacitor CPOLE  
:
The (s) indicates that the transfer function varies  
as a function of frequency. This configuration  
introduces a gain and zero, expressed by:  
1
1
CPOLE  
=
....................(24)  
1
π*R3*F  
s
π*R3*F −  
s
C4  
R3  
H
(
s
)
=
.....................................(19)  
............................(20)  
R8  
For a general solution for unconditional stability  
for any type of output capacitors, and a wide  
range of ESR values, we should implement local  
feedback with a type III compensation network.  
The typically used compensation network for  
voltage-mode controller is shown in figure 15.  
1
Fz =  
2π *R3 *C4  
First select the desired zero-crossover frequency  
(Fo):  
Again, the transfer function is given by:  
F > FESR andF ≤  
(
1/5~1/10  
)
*F  
s
o
o
Ve  
Vo  
Zf  
= H(s) = −  
Use the following equation to calculate R3:  
ZIN  
By replacing Zin and Zf according to figure 15,  
the transfer function can be expressed as:  
Vosc *F *FESR*R8  
o
R3 =  
...........................(21)  
V *F2  
in  
LC  
(1+ sR3C4 )  
[
1+ sC7  
(
R8 + R10  
)
]
H(s) = −  
....(25)  
C4 *C3  
sR (C +C ) 1+ sR  
(1+ sR C )  
8
4
3
3
10 7  
C4 +C3  
21  
Rev 9.0  
PD-97506  
IR3856WMPbF  
VOUT  
Compensator  
Type  
Output  
Capacitor  
ZIN  
F
ESR vs Fo  
C3  
C7  
R3  
C4  
Electrolytic  
Tantalum  
Type II  
Type III  
FLC<FESR<Fo<Fs/2  
FLC<Fo<FESR  
R
10  
R8  
Zf  
Tantalum  
Ceramic  
Fb  
Ve  
E/A  
R9  
Comp  
VREF  
Gain(dB)  
The higher the crossover frequency, the  
potentially faster the load transient response.  
However, the crossover frequency should be low  
enough to allow attenuation of switching noise.  
Typically, the control loop bandwidth or crossover  
frequency is selected such that  
H(s) dB  
Frequency  
FZ1  
FZ2  
FP2  
FP3  
F  
(
1/5~1/10  
)
*F  
o
s
The DC gain should be large enough to provide  
high DC-regulation accuracy. The phase margin  
should be greater than 45o for overall stability.  
Fig.15. Type III Compensation network and  
its asymptotic gain plot  
The compensation network has three poles and  
two zeros and they are expressed as follows:  
For this design we have:  
Vin=12V  
Vo=1.8V  
FP1 = 0............................................................(26)  
Vosc=1.8V  
1
Vref=0.7V  
Lo=1 uH  
Co=4x22uF, ESR=3mOhm each  
FP2  
FP3  
=
=
...........................................(27)  
2π *R10 *C7  
1
1
..............(28)  
2π *R3 *C3  
C4 *C3  
C4 +C3  
It must be noted here that the value of the  
capacitance used in the compensator design  
must be the small signal value. For instance, the  
small signal capacitance of the 22uF capacitor  
used in this design is 12uF at 1.8 V DC bias and  
600 kHz frequency. It is this value that must be  
used for all computations related to the  
compensation. The small signal value may be  
obtained from the manufacturer’s datasheets,  
design tools or SPICE models. Alternatively, they  
may also be inferred from measuring the power  
stage transfer function of the converter and  
measuring the double pole frequency FLC and  
using equation (16) to compute the small signal  
Co.  
2π * R3  
1
FZ1  
FZ2  
=
=
.........................................(29)  
2π *R3 *C4  
1
1
..........(30)  
2π *C7 *(R8 + R10) 2π *C7 *R8  
Cross over frequency is expressed as:  
V
1
in  
F = R3 *C7 *  
*
................................(31)  
o
Vosc 2π *Lo *Co  
Based on the frequency of the zero generated by  
the output capacitor and its ESR, relative to  
crossover frequency, the compensation type can  
be different. The table below shows the  
compensation types and location of the  
crossover frequency.  
These result to:  
FLC=22.97 kHz  
FESR=4.4 MHz  
Fs/2=300 kHz  
Select crossover frequency: Fo=100 kHz  
Since FLC<Fo<Fs/2<FESR, TypeIII is selected to  
place the pole and zeros.  
22  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Programming the Current-Limit  
Detailed calculation of compensation Type-III  
The Current-Limit threshold can be set by  
connecting a resistor (ROCSET) from the SW pin  
to the OCSet pin. The resistor can be calculated  
by using equation (4). This resistor ROCSET must  
be placed close to the IC.  
o
Desired Phase Margin Θ=70  
1sin Θ  
1+sin Θ  
F =F  
=17.63 kHz  
Z2  
o
1+sin Θ  
1sin Θ  
The RDS(on) has  
a
positive temperature  
F
P2 =F  
=567.1kHz  
o
coefficient and it should be considered for the  
worst case operation.  
Select: F =0.5*F = 8.82 kHz and  
Z1  
Z2  
ROCSetIOCSet  
F =0.5*F =300 kHz  
P3  
s
ISET =IL(critica)l  
=
.......................(32)  
RDS(on)  
Selec:tC7 =2.2nF  
Calculate R3, C3 and C4 :  
RDS(on) =14.3 mΩ*1.25=17.875mΩ  
ISET Io(LIM) = 6 A*1.5= 9 A  
2π*F *L *Co *V  
o
o
R3 =  
osc ;R =2.56 kΩ  
3
(50% over nominal output current )  
IOCSet = 59.07μA (at Fs = 600kHz)  
ROCSet = 2.694kΩ Select R7 = 2.67 kΩ  
C7*V  
in  
Select: R3 =2.55kΩ  
1
C4 =  
C3 =  
;C4 =8.84 nF, Selec:t C4 =10 nF  
;C3 =258.79pF, Selec:tC3 =220pF  
Setting the Power Good Threshold  
2π *F *R  
Z1  
3
Power Good threshold is internally set at 88% of  
Vref. When the voltage at the FB pin exceeds the  
threshold, PGood is asserted.  
1
2π*F *R3  
P3  
Calculate R , R8 and R9 :  
The PGood is an open drain output. Hence, it is  
necessary to use a pull up resistor RPG from  
PGood pin to Vcc. The value of the pull-up  
resistor must be chosen such as to limit the  
current flowing into the PGood pin, when the  
output voltage is not in regulation, to less than  
5mA. A typical value used is 10k.  
10  
1
R =  
; R =128Ω, Selec:tR =130Ω  
10 10  
10  
2π*C7*F  
P2  
1
R8 =  
-R ; R8 =3.97kΩ,  
10  
2π*C7*F  
Z2  
Selec:tR8 =4.02kΩ  
V
ref  
R9 =  
*R ;R9 =2.57kΩ Selec:tR =2.55kΩ  
8 9  
V -V  
o
ref  
23  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Application Diagram:  
Fig. 16. Application circuit diagram for a 12V to 1.8 V, 6 A Point Of Load Converter  
Suggested Bill of Materials for the application circuit:  
Part Reference Quantity Value  
Description  
SMD Elecrolytic, Fsize, 25V, 20%  
1206, 16V, X5R, 20%  
0603, 25V, X7R, 10%  
6.9x6.5x5mm, 20%, 4.7mOhm  
0805, 6.3V, X5R, 20%  
Thick Film, 0603,1/10 W,1%  
Thick Film, 0603,1/10W,1%  
Thick Film, 0603,1/10W,1%  
Manufacturer  
Panasonic  
TDK  
Panasonic  
TDK  
Panasonic  
Rohm  
Rohm  
Part Number  
EEV-FK1E331P  
1
2
1
1
4
1
1
1
330uF  
10uF  
0.1uF  
1.0uH  
22uF  
49.9k  
7.5k  
Cin  
C3216X5R1E106M  
ECJ-1VB1E104K  
SPM6550T-1R0M100A  
ECJ-2FB0J226ML  
MCR03EZPFX4992  
MCR03EZPFX7501  
MCR03EZPFX2372  
Lo  
Co  
R1  
R2  
Rt  
23.7k  
Rohm  
Rocset  
RPG  
1
1
2.67k  
10k  
Thick Film, 0603,1/10W,1%  
Thick Film, 0603,1/10W,1%  
Rohm  
Rohm  
MCR03EZPFX2671  
MCR03EZPFX1002  
C
ss C6  
2
1
1
1
1
1
1
1
2
1
0.1uF  
2.05k  
220pF  
10nF  
4.02k  
2.55k  
130  
2200pF  
1.0uF  
IR3856W  
0603, 25V, X7R, 10%  
Thick Film, 0603,1/10W,1%  
50V, 0603, NPO, 5%  
Panasonic  
Rohm  
Panasonic  
Panasonic  
Rohm  
ECJ-1VB1E104K  
MCR03EZPFX2051  
ECJ-1VC1H221J  
ECJ-1VB1H103K  
MCR03EZPFX4021  
MCR03EZPFX2551  
ERJ-3EKF1300V  
ECJ-1VB1H222K  
ECJ-BVB1C105M  
R3  
C3  
C4  
R8  
R9  
R10  
C7  
0603, 50V, X7R, 10%  
Thick Film, 0603,1/10W,1%  
Thick Film, 0603,1/10W,1%  
Thick Film, 0603,1/10W,1%  
0603, 50V, X7R, 10%  
0603, 16V, X5R, 20%  
SupIRBuck, 6A, PQFN 4x5mm  
Rohm  
Rohm  
Panasonic  
Panasonic  
International Rectifier IR3856WMPbF  
C
U1  
Vcc CPVcc  
24  
Rev 9.0  
PD-97506  
IR3856WMPbF  
TYPICAL OPERATING WAVEFORMS  
Vin=12.0V, Vcc=5V, Vo=1.8V, Io=0-6A, Room Temperature, No Air Flow  
Fig. 17. Start up at 6A Load  
Fig. 18. Start up at 6A Load,  
Ch1:Vin, Ch2:Vo, Ch3:Vss, Ch4:Enable  
Ch1:Vin, Ch2:Vo, Ch3:Vss, Ch4:VPGood  
Fig. 20. Output Voltage Ripple, 6A  
load Ch3: Vo  
Fig. 19. Start up with 1.62V Pre  
Bias, 0A Load, Ch2:Vo, Ch3:VSS  
Fig. 21. Inductor node at 6A load  
Ch3:LX  
Fig. 22. Short (Hiccup) Recovery  
Ch2:Vo , Ch3:VSS  
25  
Rev 9.0  
PD-97506  
IR3856WMPbF  
TYPICAL OPERATING WAVEFORMS  
Vin=12V, Vcc=5V, Vo=1.8V, Io=3A-6A, Room Temperature, No Air Flow  
Fig. 23. Transient Response, 3A to 6A step  
2.5A/μs  
Ch3:Vo, Ch4:Io  
26  
Rev 9.0  
PD-97506  
IR3856WMPbF  
TYPICAL OPERATING WAVEFORMS  
Vin=12V, Vcc=5V, Vo=1.8V, Io=6A, Room Temperature, No Air Flow  
Fig. 24. Bode Plot at 6A load shows a bandwidth of 104kHz and phase margin of 54 degrees  
27  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Simultaneous Tracking at Power Up and Power Down  
Vin=12V, Vo=1.8V, Io=6A, Room Temperature, No Air Flow  
3.3V  
VOUT  
IR3856W  
4.02K  
2.55K  
R
8
Rs1  
4.02K  
Seq  
Fb  
2..55K  
Rs2  
R9  
Fig. 25: Simultaneous Tracking a 3.3V input at power-up and shut-down with 6A load.  
Ch2: Vo2 (1.8Vout) Ch3:SS(1.8V) Ch4: Vo1 (3.3V)  
28  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Layout Considerations  
The connection between the OCSet resistor and  
the Sw pin should not share any trace with the  
connection between the bootstrap capacitor and  
the Sw pin. Instead, it is recommended to use a  
Kelvin connection of the trace from the OCSet  
The layout is very important when designing high  
frequency switching converters. Layout will affect  
noise pickup and can cause a good design to  
perform with less than expected results.  
Make all the connections for the power  
components in the top layer with wide, copper  
filled areas or polygons. In general, it is desirable  
to make proper use of power planes and  
polygons for power distribution and heat  
dissipation.  
The inductor, output capacitors and the IR3856W  
should be as close to each other as possible.  
This helps to reduce the EMI radiated by the  
power traces due to the high switching currents  
through them. Place the input capacitor directly at  
the Vin pin of IR3856W.  
The feedback part of the system should be kept  
away from the inductor and other noise sources.  
The critical bypass components such as  
capacitors for Vcc should be close to their  
respective pins. It is important to place the  
feedback components including feedback  
resistors and compensation components close to  
Fb and Comp pins.  
Vin  
PGnd  
resistor and the trace from the bootstrap  
Vin  
PGnd  
capacitor at the Sw pin.  
In a multilayer PCB use one layer as a power  
ground plane and have a control circuit ground  
Vout  
AGnd ground), to which all signals are  
(analog  
referenced. The goal is to localize the high  
current path to a separate loop that does not  
iAnGtenrdfere with the more sensitive analog control  
Vout  
function. These two grounds must be connected  
together on the PC board layout at a single point.  
The Power QFN is a thermally enhanced  
package. Based on thermal performance it is  
recommended to use at least a 4-layers PCB. To  
effectively remove heat from the device the  
exposed pad should be connected to the ground  
plane using vias. Figure 26 illustrates the  
implementation of the layout guidelines outlined  
above, on the IRDC3856W 4 layer demoboard.  
Compensation parts  
should be placed as close  
as possible to  
the Comp pin.  
Vout  
Vin  
All bypass caps  
should be placed as  
close as possible to  
their connecting  
pins.  
AGnd  
Vin  
Resistors Rt, Rocset,  
and SS capacitor  
should be placed as  
close as possible to  
their pins.  
PGnd  
Fig. 26a. IRDC3856W demo-board layout  
considerations – Top Layer  
29  
Rev 9.0  
PD-97506  
IR3856WMPbF  
PGnd  
Fig. 26b. IRDC3856 demoboard layout  
considerations – Bottom Layer  
Analog  
Ground  
plane  
Vin  
Single point  
connection between  
AGND & PGND,  
should be close to  
the SupIRBuck, kept  
away from noise  
sources.  
Power  
Ground  
Plane  
AGnd  
Fig. 26c. IRDC3856 demoboard layout  
considerations – Mid Layer 1  
Feedback trace  
should be kept  
away form  
noise sources  
Fig. 26d. IRDC3856 demoboard layout  
considerations – Mid Layer 2  
30  
Rev 9.0  
PD-97506  
IR3856WMPbF  
PCB Metal and Components Placement  
31  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Solder Resist  
32  
Rev 9.0  
PD-97506  
IR3856WMPbF  
Stencil Design  
33  
Rev 9.0  
PD-97506  
IR3856WMPbF  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
This product has been designed and qualified for the Industrial market (Note5)  
Visit us at www.irf.com for sales contact information  
Data and specifications subject to change without notice. 08/12  
34  
Rev 9.0  

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