IR390LM06CS02 [INFINEON]
Rectifier Diode, 1 Element, 600V V(RRM);
| 型号： | IR390LM06CS02 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Element, 600V V(RRM) 快速恢复二极管 |
| 文件： | 总3页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0162J 07/04
IR390LM06CS02CB SERIES
FAST RECOVERY DIODES
Junction Size:
Wafer Size:
Rectangular ... x ... mils
4"
VRRM Class:
600 V
PassivationProcess:
Glassivated MOAT
Reference IR Packaged Part: 80EPF Series
Major Ratings and Characteristics
Parameters
Units
1250mV
600V
TestConditions
TJ =25°C, IF =80A
VFM
MaximumForwardVoltage
VRRM ReverseBreakdownVoltageRange
TJ = 25°C, IRRM = 100 µA
(1)
(1) Nitrogen flow on die edge.
Mechanical Characteristics
NominalBackMetalComposition,Thickness
Cr-Ni-Ag(1KA-4KA-6KA)
100%Al,(20µm)
NominalFrontMetalComposition,Thickness
ChipDimensions
390x270 mils(9.91x6.86mm)-seedrawing
WaferDiameter
100mm, withstd. <110>flat
WaferThickness
260µm
45µm
MaximumWidthofSawingLine
RejectInkDotSize
InkDotLocation
0.25mmdiameterminimum
Seedrawing
RecommendedStorageEnvironment
nitrogen,withnocontamination
Storageinoriginalcontainer,indessicated
1
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IR390LM06CS02CB Series
Bulletin I0162J 07/04
Ordering Information Table
Device Code
IR 390
L
M
06
C
S02 CB
3
4
8
7
1
2
6
5
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
InternationalRectifierDevice
Chip Dimension in Mils
Type of Device: L = Wire Bondable Fast Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: 600V
Metallization: C = Aluminium (Anode) - Silver (Cathode)
T
code: S02 = 200 nsec
rr
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimeters (mils)
2
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IR390LM06CS02CB Series
Bulletin I0162J 07/04
Wafer Layout
TOPVIEW
N° 80 Basic Cells
All dimensions are in millimeters
3
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