IR390LM12CS05PBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER;
| 型号： | IR390LM12CS05PBF |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER 快速恢复二极管 |
| 文件： | 总3页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0113J 05/00
IR390LM..CS05CB SERIES
FAST RECOVERY DIODES
Junction Size:
Wafer Size:
Rectangular 390 x 270 mils
4"
VRRM Class:
1000 to 1200 V
PassivationProcess:
Glassivated MOAT
Reference IR Packaged Part: 80EPF Series
Major Ratings and Characteristics
Parameters
Units
TestConditions
VFM
MaximumForwardVoltage
1300mV
TJ = 25°C, IF = 80 A
VRRM Reverse BreakdownVoltageRange
1000 to1200V TJ = 25°C, IRRM = 100 µA
(1)
(1) Nitrogen flow on die edge.
Mechanical Characteristics
NominalBackMetalComposition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
NominalFrontMetalComposition, Thickness
ChipDimensions
390 x 270 mils (9.91x6.86 mm) - see drawing
100 mm, with std. < 110 > flat
260 µm
WaferDiameter
WaferThickness
MaximumWidthofSawingLine
Reject Ink Dot Size
45 µm
0.25mmdiameterminimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
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1
IR390LM..CS05CB Series
Bulletin I0113J 05/00
Ordering Information Table
Device Code
IR 390
L
M
12
C
S05 CB
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
InternationalRectifierDevice
Chip Dimension in Mils
Type of Device: L = Wire Bondable Fast Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = VRRM
Available Class
10 = 1000 V
12 = 1200 V
Metallization: C = Aluminium (Anode) - Silver (Cathode)
T
code: S05 = 500 nsec
rr
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimeters (mils)
2
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IR390LM..CS05CB Series
Bulletin I0113J 05/00
Wafer Layout
TOPVIEW
N° 80 Basic Cells
All dimensions are in millimeters
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