IR480SG12H [INFINEON]
Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH WAFER;![IR480SG12H](http://pdffile.icpdf.com/pdf2/p00298/img/icpdf/IR480SG12H_1803345_icpdf.jpg)
型号: | IR480SG12H |
厂家: | ![]() |
描述: | Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH WAFER 栅 栅极 |
文件: | 总3页 (文件大小:60K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Bulletin I0207J rev. A 01/01
IR480SG..HCB Series
PHASE CONTROL THYRISTORS
Junction Size:
Square 480 mils
Wafer Size:
4"
VDRM / VRRM Class:
PassivationProcess:
600 to 1200 V
Glassivated MESA
Reference IR Packaged Part: T90RIA Series
Major Ratings and Characteristics
Parameters
Units
Test Conditions
VTM
MaximumOn-stateVoltage
1.2V
TJ =25°C, IT =25A
VDRM/VRRM ReverseBreakdownVoltage
600 to1200V TJ = 25°C, IRRM = 100 µA
(1)
IGT
VGT
IH
Max.RequiredDCGateCurrenttoTrigger
110mA
1.9V
TJ=25°C,anodesupply=6V,resistiveload
TJ=25°C,anodesupply=6V,resistiveload
Max.RequiredDCGateVoltagetoTrigger
HoldingCurrentRange
10 to 200mA Anodesupply=6V,resistiveload
IL
MaximumLatchingCurrent
400mA
Anodesupply=6V,resistiveload
(1) Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
480 x 480 mils (see drawing)
100 mm, with std. <100> flat
370 µm ± 10 µm
Nominal Front Metal Composition, Thickness
ChipDimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
130µm
0.25mmdiameterminimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
IR480SG..HCB Series
Bulletin I0207J rev. A 01/01
Ordering Information Table
Device Code
IR 480
S
G
12
H
CB
2
3
4
5
1
6
7
1
2
-
-
International Rectifier Device
Chip Dimension in Mils
3
4
5
6
7
-
-
-
-
-
Type of Device: S = Solderable SCR
Passivation Process: G = Glassivated MESA
Voltage code: Code x 100 = VRRM
Metallization: H = Silver (Anode) - Silver (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimeters
www.irf.com
2
IR480SG..HCB Series
Bulletin I0207J rev. A 01/01
Wafer Layout
TOP VIEW
N° 37 Basic Cells
All dimensions are in millimiters
3
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IR480SG12HCB
Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER
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IR480SG12HCB
Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER
VISHAY
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