IR51H420PBF [INFINEON]
Half Bridge Based Peripheral Driver, CMOS, PSIP7, SIP-9/7;型号: | IR51H420PBF |
厂家: | Infineon |
描述: | Half Bridge Based Peripheral Driver, CMOS, PSIP7, SIP-9/7 驱动 接口集成电路 |
文件: | 总7页 (文件大小:56K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Data Sheet No. PD60083-
K
IR51H(D)224
IR51H(D)320
IR51H(D)420
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
SELF-OSCILLATING HALF BRIDGE
ProductSummary
Features
• Output Power MOSFETs in half-bridge configuration
• High side gate drive designed for bootstrap operation
• Bootstrap diode integrated into package (HD type)
• Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
• Internal oscillator with programmable frequency
V
(max) 250V (IR51H(D)224)
400V (IR51H(D)320)
IN
500V (IR51H(D)420)
Duty Cycle
Deadtime
50%
1.2µs
R
ds(on)
1.1Ω (IR51H(D)224)
1
f =
Ω
3.0 (IR51H(D)320)
1. 4 × (RT + 75Ω) × CT
3.6Ω (IR51H(D)420)
P (T = 25o )
2.0W
C
• 15.6V Zener clamped Vcc for offline operation
• Half-bridge output is out of phase with RT
D
A
• Micropower startup
Package
Description
The IR51H(D)XXX are complete high voltage, high speed, self-
oscillating half-bridge circuits. Proprietary HVIC and latch im-
®
mune CMOS technologies, along with the HEXFET power
MOSFET technology, enable ruggedized single package construc-
tion.The front-end features a programmable oscillator which func-
tions similar to the CMOS 555 timer. The supply to the control
circuit has a zener clamp to simplify offline operation.The output
features two HEXFETs in a half-bridge configuration with an in-
ternally set deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and low side
9-Lead SIP
without leads 5 and 8
power MOSFETs are matched to simplify
use in 50% duty cycle applications. The
device can operate up to 500 volts.
TypicalConnection
DC Bus
VIN
D 1
IR51H(D)XXX
External
Fast recovery diode D1 is
not required for HD type
1
6
9
7
Vcc
R T
VB
VIN
2
3
4
R T
C T
C T
V O
TO,
C O M
LOAD
COM
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1
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
IR51H(D)224
IR51H(D)320
IR51H(D)420
AbsoluteMaximumRatings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any
lead. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions.
Symbol
Definition
Minimum Maximum
Units
VIN
High voltage supply
-224
-320
-420
- 0.3
- 0.3
250
400
- 0.3
500
Vo - 0.3
Vo +2.5
V
VB
High side floating supply
Half-bridge output
RT voltage
VO
-0.3
- 0.3
- 0.3
—
VIN + 0.3
Vcc + 0.3
Vcc + 0.3
25
VRT
VCT
Icc
CT voltage
Supply current (note 1)
RT output current
Peak diode recovery
mA
IRT
- 5
5
dV/dt
PD
—
3.5
V/ns
W
oC/W
Package power dissipation @ T ≤ +25°C
—
2.00
60
A
RthJA
TJ
Thermal resistance, junction to ambient
Junction temperature
—
-55
-55
—
150
oC
TS
Storage temperature
150
TL
Lead temperature (soldering, 10 seconds)
300
NOTE 1:
This IC contains a zener clamp structure between V
and COM which has a nominal breakdown voltage of 15.6V.
CC
Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V
specified in the Electrical Characteristics Section
CLAMP
2
www.irf.com
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
IR51H(D)224
IR51H(D)320
IR51H(D)420
RecommendedOperatingConditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used
within the recommended conditions.
Symbol
Definition
Minimum
Maximum
Units
VB
VIN
High side floating supply absolute voltage
High voltage supply
V
+ 10
—
V + V
o
o
clamp
250
-224
-320
-420
V
—
—
400
500
VIN
VO
ID
Half-bridge output voltage
-3.0 (note 2)
Continuous drain current (T = 25°C)
A
—
—
-224
-320
1.1
0.9
-420
-224
-320
-420
—
—
0.7
0.7
0.6
0.5
5
A
(T = 85°C)
A
—
—
(note 3)
-40
ICC
TA
Supply current
mA
°C
Ambient temperature
125
NOTE 2:
Care should be taken to avoid switching conditions where the V node flies inductively below ground by more than 5V.
S
NOTE 3:
Enough current should be supplied to the V
lead of the IC to keep the internal 15.6V zener diode clamping the
CC
voltage at this lead.
DynamicElectricalCharacteristics
VBIAS (VCC, VBS) = 12V, T = 25oC unless otherwise specified.
A
Symbol Definition
Min. Typ.
Max. Units TestConditions
t
Reverse recovery time (MOSFET body diode)
—
I =1.1A
F
rr
-224
-320
-420
200
270
240
—
—
—
—
—
—
—
—
ns
I
F=900mA
di/dt
=100
A/µs
I
F=700mA
Q
Reverserecoverycharge (MOSFETbodydiode)
RT duty cycle
I =1.1A
F
rr
-224
-320
-420
0.7
0.6
0.5
50
µC
—
—
—
I =900mA
F
I =700mA
F
fosc = 20 kHz
—
—
D
%
www.irf.com
3
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
IR51H(D)224
IR51H(D)320
IR51H(D)420
Static Electrical Characteristics
VBIAS (VCC, VB) = 12V, T = 25oC unless otherwise specified.
A
Symbol Definition
Min. Typ. Max. Units TestConditions
VCCUV+ VCC supply undervoltage positive going
threshold
—
—
—
8.4
8.0
300
—
V
V
VCC supplyundervoltagenegativegoing
threshold
—
V
CCUV-
I
Quiescent VCC supply current
—
—
—
50
—
µA VCC > VCCUV
QCC
V
I
VCC zener shunt clamp voltage
Quiescent VBS supply current
—
—
15.6
30
V
ICC = 5mA
CLAMP
QBS
µA
l
Offset supply leakage current
Oscillatorfrequency
—
—
—
20
VB = VIN = 500V
RT = 35.7 kΩ
CT = 1 nF
OS
f
OSC
kHz
—
100
—
RT = 7.04 kΩ
CT = 1 nF
I
CT input current
—
—
0.001
100
1.0
—
µA
CT
V
CT undervoltage lockout
RT high level output voltage, VCC - RT
Note 2
CTUV
VRT+
—
—
20
200
—
—
IRT = 100µA
IRT = -1mA
mV
VRT-
RT low level output voltage
—
—
20
200
—
—
IRT = 100µA
IRT = -1mA
VRTUV
VCT+
RT undervoltage lockout, VCC - RT
2/3 VCC threshold
—
—
100
8.0
—
—
IRT = 100µA
kHz
Ω
VCT-
1/3 VCC threshold
—
4.0
—
Rds(on) Static-drain-to-source on-resistance
—
I =1.1A
F
-224
-320
-420
1.1
1.8
3.0
—
I
—
—
—
F=900mA
di/dt
—
—
—
—
—
I
F=700mA
=100
I =1.1A
F
V
Diodeforwardvoltage
SD
-224
-320
-420
0.85
0.7
V
I =900mA
F
A/µs
—
—
I =700mA
F
0.8
4
www.irf.com
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
IR51H(D)224
IR51H(D)320
IR51H(D)420
FunctionalBlockDiagram
V
VIN
B
6
D1
9
1
Vcc
IRFCXXX
H
V
O
S
IR2151
2
7
R
V O
T
L
O
IRFCXXX
3
C
T
4
C O M
Fast recovery diode D1 is
incorporated in IR51HDXXX only
LeadDefinitions
Symbol
LeadDescription
VCC
Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V norminal is included
to allow the VCC to be current fed directly from VIN typically by means of a high value resistor.
RT
CT
Oscillator timing resistor output; a resistor is connected from RT to CT. RT is out of phase with the half-
bridge output (VO).
Oscillator timing capacitor input; a capacitor is connected from CT to COM in order to program the
oscillator frequency according to the following equation:
1
f =
1. 4 × (RT + 75Ω) × CT
CT PIN also invokes shutdown function (see note 2) where 75Ω is the effective impedence of the RT
output stage.
VB
High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed
to feed from VCC to VB. (HD type circuits incorporate this diode).
VIN
High voltage supply
VO
Half Bridge output
COM
Logic and low side of half bridge return
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5
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
IR51H(D)224
IR51H(D)320
IR51H(D)420
Lead Assignments
1
2
3
4
V
R
C
COM
6
7
9
V
B
cc
T
T
VO
V
IN
9
9-Lead SIP without Leads 5 and 8
2
1
Vccuv+
V CLAMP
Vcc
RT
CT
V+
0
VO
Figure 1. Input/Output Timing Diagram
6
www.irf.com
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
IR51H(D)224
IR51H(D)320
IR51H(D)420
Case outline
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1982
2. Controlling Dimension: INCH
3. Dimensions are shown in millimeters (inches)
9-Lead SIP w/o leads 5 and 8
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
http://www.irf.com/
Data and specifications subject to change without notice. 5/14/2001
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7
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