IR53HD420PBF [INFINEON]
Half Bridge Based Peripheral Driver, BICMOS, PSIP7, SIP-9/7;
| 型号： | IR53HD420PBF |
| 厂家： | 
Infineon |
| 描述： | Half Bridge Based Peripheral Driver, BICMOS, PSIP7, SIP-9/7 |
| 文件： | 总8页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet No. PD60140J
IR53H(D)420(-P2)
SELF-OSCILLATING HALF BRIDGE
Features
ProductSummary
• Output power MOSFETs in half-bridge configuration
• High side gate drive designed for bootstrap operation
• Bootstrap diode integrated into package (HD type)
• Tighter initial deadtime control
• Low temperature coefficient deadtime
• 15.6V zener clamped Vcc for offline operation
• Half-bridge output is out of phase with RT
V
(max)
IN
500V
Duty Cycle
50%
Deadtime (type.)
1.2µs
3.0Ω
• True micropower startup
R
ds(on)
• Shutdown feature (1/6th VCC) on CT lead
• Increased undervoltage lockout hysteresis (1Volt)
• Lower power level-shifting circuit
o
P (T = 25 ) 2.0W or 3.0W
C
D
A
• Lower di/dt gate drive for better noise immunity
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads
• Constant VO pulse width at startup
• Heatsink package version (P2 type)
Package
Description
The IR53H(D)420(-P2) are complete high voltage, high speed,
self-oscillating half-bridge circuits. Proprietary HVIC and latch
®
immune CMOS technologies, along with the HEXFET power
7 Pin Lead SIP
MOSFET technology, enable ruggedized single package con-
struction. The front-end features a programmable oscillator
which functions similar to the CMOS 555 timer. The supply to
the control circuit has a zener clamp to simplify offline opera-
tion. The output features two HEXFETs in a half-bridge con-
figuration with an internally set deadtime designed for mini-
mum cross-conduction in the half-bridge. Propagation delays
for the high and low side power MOSFETs
are matched to simplify use in 50% duty
cycle applications. The device can oper-
ate up to the V (max) rating.
IN
TypicalConnection
HV DC Bus
IR53H(D)420(-P2)
D 1
VIN
External
1
2
3
4
6
9
7
Fast recovery diode D1 is not
required for HD type
Vcc
R T
VB
VIN
R T
C T
C T
V O
TO,
C O M
LOAD
COM
IR53H(D)420(-P2)
AbsoluteMaximumRatings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All volt-
age parameters are absolute voltages referenced to COM, unless stated otherwise. All currents are defined
positive into any lead. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions.
Symbol
Definition
Minimum Maximum
Units
VIN
High voltage supply
- 0.3
- 0.3
500
V + 25
o
VIN + 0.3
Vcc + 0.3
VB
High side floating supply
Half-bridge output
RT voltage
V
o
V
VO
VRT
VCT
-0.3
- 0.3
- 0.3
—
CT voltage
Vcc + 0.3
I
cc
Supply current (note 1)
RT output current
Peak diode recovery
25
5
mA
V/ns
W
IRT
- 5
—
dV/dt
PD
3.50
2
Package power dissipation @ T ≤ +25°C
—
A
-P2
—
3
RthJA
RthJC
Thermal resistance, junction to ambient
—
60
40
20
-P2
-P2
—
oC/W
°C
Thermal resistance, junction to case
(heatsink)
—
TJ
TS
TL
Junction temperature
-55
-55
—
150
150
300
Storage temperature
Lead temperature (soldering, 10 seconds)
NOTE 1:
This IC contains a zener clamp structure between V
and COM which has a nominal breakdown voltage of 15.6V.
CC
Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V
specified in the Electrical Characteristics Section
CLAMP
2
IR53H(D)420(-P2)
Recommended Component Values
Symbol
Definition
Minimum
10
Maximum
Units
kΩ
R
T
T
Timing resistor value
—
—
C
C
T
pin capacitor value
330
pF
IR53H(D)420(-P2) RT vs Frequency
1000000
100000
10000
1000
330pf
470pF
1nF
CT Values
2.2nF
4.7nF
10nF
100
10
10
100
1000
10000
100000
1000000
RT (ohms)
3
IR53H(D)420(-P2)
RecommendedOperatingConditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used
within the recommended conditions.
Symbol
Definition
Minimum
Maximum
Units
VB
VIN
High side floating supply absolute voltage
High voltage supply
V
+ 10
—
V + V
o
o
clamp
500
V
VO
ID
Half-bridge output voltage
-3.0 (note 3)
—
500
0.7
Continuous drain current (T = 25°C)
A
—
-P2
0.85
0.5
0.6
(T = 85°C)
A
A
—
—
-P2
-P2
(T = 25°C)
C
—
1.2
5
ICC
TA
Supply current
mA
°C
(note 3)
-40
Ambient temperature
125
NOTE 2:
Care should be taken to avoid switching conditions where the V node flies inductively below ground by more than 5V.
S
NOTE 3:
Enough current should be supplied to the V
lead of the IC to keep the internal 15.6V zener diode clamping the
CC
voltage at this lead.
Electrical Characteristics
V
BIAS
(V , V ) = 12V, C = 1 nF and T = 25°C unless otherwise specified. The V , V and I parameters are
CC BS T A IN TH IN
referenced to COM.
MOSFET Characteristics
Symbol Definition
Min. Typ.
Max. Units Test Conditions
t
Reverse recovery time (MOSFET body diode)
Reverse recovery charge (MOSFET body diode)
Static drain-to-source on resistance
Diode forward voltage
—
—
—
—
240
0.5
3.0
0.8
rr
—
di/dt =
100
A/µs
µC
Q
rr
—
—
—
I =700mA
F
R
V
Ω
V
ds(on)
SD
Dynamic Characteristics
Symbol Definition
Min. Typ.
Max. Units Test Conditions
D
tsd
RT duty cycle
50
%
fosc = 20 kHz
—
—
—
—
Shutdown propagation delay
660
nsec
4
IR53H(D)420(-P2)
Electrical Characteristics
V (V , V ) = 12V, C = 1 nF and T = 25°C unless otherwise specified. The V , V and I parameters are
BIAS CC BS T A IN TH IN
referenced to COM.
Low Voltage Supply Characteristics
Symbol Definition
Min. Typ.
Max.
Units Test Conditions
V
V
V
Rising V
undervoltage lockout threshold
undervoltage lockout threshold
8.1
7.2
0.5
—
9.0
8.0
1.0
75
9.9
8.8
CCUV+
CCUV-
CC
Falling V
V
CC
V
undervoltage lockout Hysteresis
CC
1.5
CCUVH
QCCUV
I
Micropower startup V
supply current
150
950
V
≤ V
CC CCUV-
CC
µA
I
Quiescent V
supply current
CC
—
500
QCC
VCLAMP VCC zener clamp voltage
14.4
15.6
16.8
V
ICC = 5mA
Floating Supply Characteristics
Symbol Definition
Min. Typ.
Max. Units Test Conditions
I
Micropower startup V supply current
BS
—
—
—
0
10
50
5.0
V
≤ V
QBSUV
CC
CCUV-
V =V + 0.1V
CC CCUV+
µA
I
Quiescent VBS supply current
30
4.0
QBS
V
Minimum required V voltage for proper
V
BSMIN
BS
functionality from R to HO
T
I
Offset supply leakage current
—
—
—
50
µA
V = V = 600V
B S
OS
VF
Bootstrap diode forward voltage (IR2153D)
0.5
1.0
V
IF = 250mA
Oscillator I/O Characteristics
Symbol Definition
Min.
Typ. Max. Units Test Conditions
f
Oscillator frequency
19.4
20
20.6
R = 36.9kΩ
T
RT = 7.43kΩ
fo < 100kHz
osc
kHz
94
48
—
100
50
106
52
d
I
R pin duty cycle
T
%
C
pin current
0.001
0.70
8.0
1.0
1.2
—
uA
mA
T
CT
I
UV-mode C pin pulldown current
0.30
—
V
= 7V
CC
T
CTUV
V
V
V
V
Upper C ramp voltage threshold
T
CT+
V
—
4.0
—
Lower C ramp voltage threshold
CT-
T
C
T
voltage shutdown threshold
1.8
—
—
—
—
2.1
10
2.4
50
CTSD
RT+
I
= 100µA
= 1mA
= 100µA
= 1mA
≤ V
High-level R output voltage, V
- V
T
CC
RT
RT
100
10
300
50
I
I
I
RT
RT
RT
V
Low-level R output voltage
T
RT-
100
300
mV
—
—
0
100
50
V
I
V
V
UV-mode R output voltage
T
RTUV
RTSD
CC
CCUV-
10
= 100µA,
SD-Mode R output voltage, V
- V
T
CC
RT
RT
V
= 0V
CT
—
10
300
I
= 1mA,
RT
V
= 0V
CT
5
IR53H(D)420(-P2)
FunctionalBlockDiagram
V
VIN
B
6
D1
9
1
Vcc
IRFCXXX
H
V
O
S
C
IR2153
2
7
R
VO
T
L
O
IRFCXXX
3
C
T
4
C O M
Fast recovery diode D1 is
incorporated in IR53HDXXX only
6
IR53H(D)420(-P2)
Case Outline - 7 pin
4X
5.08 (.100)
2X
16.89 (.665)
16.63 (.655)
3.18 (.125)
2.92 (.115)
NOTES:
1. Dimensioning and tolerancing per
ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in
millimeters (inches)
7
IR53H(D)420(-P2)
Lead Assignments
1
2
3
4
V
R
C
COM
6
7
9
V
B
cc
T
T
VO
V
IN
9
2
1
9 Lead SIP without Leads 5 and 8
Lead Definitions
Symbol
VCC
RT
Lead Description
Logic and internal gate drive supply voltage.
Oscillator timing resistor output
Oscillator timing capacitor input
High side gate drive floating supply.
High voltage supply
CT
VB
VIN
VO
Half Bridge output
COM
Logic and low side of half bridge return
Vccuv+
V CLAMP
Vcc
RT
CT
V+
0
VO
Figure 1. Input/Output Timing Diagram
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Data and specifications subject to change without notice. 3/22/99
8
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