IR6210 [INFINEON]
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH; 智能高侧MOSFET功率开关
| 型号： | IR6210 |
| 厂家： | 
Infineon |
| 描述： | INTELLIGENT HIGH SIDE MOSFET POWER SWITCH |
| 文件： | 总4页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Preliminary Data Sheet 6.055A
IR6210
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Features
• PWM Current Limit for Short Circuit Protection
V (op)
cc
5v-50v
200mΩ
5A
• Over-TemperatureProtection
• Active Output Negative Clamp
• ReverseBatteryProtection
• BrokenGroundProtection
R
ds(on)
I
lim
• Short to V Protection
CC
• Low Noise Charge Pump
• SleepModeSupplyCurrent
• 4kV ESD Protection On All Pin
• LogicGroundIsolatedFromPowerGround
T
170°C
200mJ
j(sd)
E
av
GeneralDescription:
The IR6210 is a 5 terminal monolithic HIGH SIDE SWITCH
with built in short circuit, over- temperature, ESD, inductive load
turnoffcapabilityanddiagnosticfeedback.
Applications
•
•
SolenoidDriver
DCMotorDriver
The on-chip protection circuit goes into PWM mode, limiting the
averagecurrentduringshortcircuitifthedraincurrentexceeds
5A. The protection circuit latches off the high side switch if the
junction temperature exceeds 170°C and latches on after the junc-
tion temperature falls by 10°C. The drain to source voltage is
actively clamped at 55V, improving its performance during turn
off with inductive loads.
TruthTable
Condition
Normal
In
H
L
Out
H
Dg
H
L
Normal
L
OutputOpen
OutputOpen
ShortedOutput
ShortedOutput
Over-Temperature
Over-Temperature
H
L
H
H
H
L
The on-chip charge pump high side driver stage is floating and ref-
erenced to the source of the power MOSFET. Thus the logic to
power ground isolation can be as high as 50V. This allows opera-
tion with larger offset as well as controlling the switch during
loadenergyrecirculationorregeneration.
A diagnostic pin is provided for status feedback of short circuit,
overtemperatureandopenloaddetection.
H
H
L
Current-Limiting
L
L
L
L
H
L
L
L
AvailablePackages
BlockDiagram
I
T
(5-lead)
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IR6210
Absolute Maximum Ratings
AbsoluteMaximumRatingsindicatesustainedlimitsbeyondwhich
damage to the device may occur. (Tc = 25°C unless otherwise specified.)
Minimum Maximum Units Test Conditions
V
Supply Voltage
Permanent
Reverse
-0.3
16
50
Pin 3 to Pin 1
cc
(1), for 10 seconds
V
V
V
Logic to Power Ground Offset
Input Voltage
Input Current
Output Voltage
Output Current
Diagnostic Output Voltage
Diagnostic Output Current
Repetitive Avalanche Energy
Electrostatic Discharge(Human Body Model)
Electrostatic Discharge (Machine Model)
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature (Soldering, 10 seconds)
V
V
V
offset
in
cc -50
-0.3
cc +0.3
30
10
I
V
mA
V
in
V
out
dg
av
cc -50
cc +0.3
I
Self-limited
-0.3
out
V
30
10
200
4000
1000
28
V
mA
mJ
V
V
W
I
dg
E
I = 2A (2)
C = 100 pF, R = 1500Ω
C = 200 pF, R = 0Ω
ESD1
ESD2
P
T
T
T
T =25°C
case
D
-40
-40
Self-limited
175
300
Jop
Stg
L
°C
NOTES: (1) with 15k Ω resistors in input and diagnostic
(2) maximum frequency depends on heatsink (rectangular waveform)
Static Electrical Characteristics
(Tc = 25°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
V
Operating Voltage Range
Sleep Mode Supply Current
Supply Current (Average)
Supply Current (AC RMS)
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
On-State Input Current
Off-State Input Current
Output Leakage Current
Output Leakage Current
5
1
10
1
0
40
3
20
2
1.8
20
0.3
50
2.5
70
30
10
10
200
V
ccop
ccoff
ccon
ccac
I
I
I
µA
mA
µA
V =24V, V +0V
cc
in
in
in
V
V
= 5V
= 5V
V
V
ih
il
V
I
I
I
I
V
V
V
V
= 3.5V
= 0.4V
lon
loff
oh
ol
in
in
µA
= 6V
= 0V
out
out
V
Low Level Diagnostic Output Voltage
Diagnostic Output Leakage Current
On-State Resistance
0
V
µA
I
V
= 1.6mA
= 5V
dgl
dg
I
dgh
dg
R
150
200
I
V
= 1A
= 5V, I = 1A
out
DS(on)
out
mΩ
cc
Switching Electrical Characteristics
(VCC = 14V, Resistive Load (RL) = 12Ω, TC= 25°C.)
Minimum Typical Maximum Units Test Conditions
t
Over-Current Cycle Time
Over-Current Duty Cycle
Turn-On Delay Time to 90%
Turn-Off Delay Time to 10%
Slew Rate On
5
10
3
70
60
ms
c
D
%
c
on
off
t
t
µs
dv/dt
dv/dt
on
off
V/µs
Slew Rate Off
5
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IR6210
Protection Characteristics
Minimum Typical Maximum Units Test Conditions
I
iso
ISO Current
50
2
62
V - V = 0.5V, T = 85°C
cc out c
A
I
Internal Current Limit
5
ilm
V
V
V
V
Short Circuit Detection Voltage
Open Load Detection Voltage
Output Negative Clamp
Output Negative Clamp
3.5
3.5
54
56
sc
slh
cl1
cl2
V
I
out = 10mA
I
out = 2A
Thermal Characteristics
Minimum Typical Maximum Units Test Conditions
T
T
Rth
Rth
Thermal Shutdown Temperature
ThermalHysteresis
ThermalResistance,JunctiontoCase
ThermalResistance,JunctiontoAmbient
170
jsd
°C
5
3.5
50
hys
jc
°C/W
ja
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IR6210
Case Outline TO-220AB (IR6210)
GND
IN
V
CC
DG
OUT
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M, 1982
2. Controlling dimension: INCH
3. Dimensions shown are in millimeters (inches)
4. Heatsink and lead measurements do not include burrs.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Dataandspecificationssubjecttochangewithoutnotice.
12/96
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