IRAUDAMP11_15 [INFINEON]
120W x 3 Channel Class D Audio Power Amplifier;
| 型号： | IRAUDAMP11_15 |
| 厂家： | 
Infineon |
| 描述： | 120W x 3 Channel Class D Audio Power Amplifier |
| 文件： | 总35页 (文件大小：802K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRAUDAMP11
120W x 3 Channel Class D Audio Power Amplifier
Using the IRS2053M and IRF6665
By
Jun Honda, Liwei Zheng
CAUTION:
International Rectifier suggests the following guidelines for safe operation and handling of
IRAUDAMP11 Demo board;
Always wear safety glasses whenever operating Demo Board
Avoid personal contact with exposed metal surfaces when operating Demo Board
Turn off Demo Board when placing or removing measurement probes
www.irf.com
Page 1 of 35
IRAUDAMP11 REV 1.0
TABLE OF CONTENTS
PAGE
INTRODUCTION............................................................................................................................................... 3
SPECIFICATIONS............................................................................................................................................ 3
CONNECTION SETUP..................................................................................................................................... 5
CONNECTOR DESCRIPTION ......................................................................................................................... 5
TEST PROCEDURES....................................................................................................................................... 6
PERFORMANCE AND TEST GRAPHS .......................................................................................................... 7
CLIPPING CHARACTERISTICS.................................................................................................................... 10
SOFT CLIPPING............................................................................................................................................. 10
EFFICIENCY................................................................................................................................................... 12
THERMAL CONSIDERATIONS..................................................................................................................... 12
THERMAL INTERFACE MATERIAL’S PRESSURE CONTROL ................................................................................. 13
POWER SUPPLY REJECTION RATIO (PSRR)............................................................................................15
SHORT CIRCUIT PROTECTION RESPONSE ..............................................................................................16
IRAUDAMP11 OVERVIEW ............................................................................................................................ 17
FUNCTIONAL DESCRIPTIONS..................................................................................................................... 19
IRS2053 GATE DRIVER IC ............................................................................................................................ 19
SELF-OSCILLATING FREQUENCY .................................................................................................................... 20
ADJUSTMENTS OF SELF-OSCILLATING FREQUENCY......................................................................................... 20
SELECTABLE DEAD-TIME................................................................................................................................ 21
PROTECTION SYSTEM OVERVIEW ............................................................................................................ 22
CLICK AND POP NOISE REDUCTION......................................................................................................... 24
BUS PUMPING............................................................................................................................................... 24
INPUT SIGNAL AND GAIN SETTING ........................................................................................................... 26
GAIN SETTING............................................................................................................................................... 26
IRAUDAMP11 FABRICATION MATERIALS................................................................................................. 28
IRAUDAMP11 HARDWARE .......................................................................................................................... 31
IRAUDAMP11 PCB SPECIFICATIONS......................................................................................................... 32
REVISION CHANGES DESCRIPTIONS........................................................................................................ 35
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Page 2 of 35
IRAUDAMP11 REV 1.0
Introduction
The IRAUDAMP11 Demo board is a reference design which uses only one IC (IRS2053M) to derive
appropriate input signals, amplify the audio input, and achieve a three-channel 120 W/ch (4Ω, THD+N=1%)
half-bridge Class D audio power amplifier. The reference design demonstrates how to use the IRS2053M
Class D audio controller and gate driver IC, implement protection circuits, and design an optimum PCB
layout using IRF6665 DirectFET MOSFETs. The reference design contains all the required housekeeping
power supplies for ease of use. The three-channel design is scalable, for power and number of channels.
Applications
AV receivers
Home theater systems
Mini component stereos
Powered speakers
Sub-woofers
Musical Instrument amplifiers
Automotive after market amplifiers
Features
Output Power:
120W x 3 channels (4Ω, THD+N=1%)
or 170W x 3 channels (4Ω, THD+N=10%)
Residual Noise:
Distortion:
220V, IHF-A weighted, AES-17 filter
0.02% THD+N @ 60W, 4Ω
Efficiency:
Multiple Protection Features:
90% @ 120W, 4Ω, single-channel driven, Class D stage
Over-current protection (OCP), high side and low side
Over-voltage protection (OVP),
Under-voltage protection (UVP), high side and low side
Over-temperature protection (OTP)
PWM Modulator:
Self-oscillating half-bridge topology with optional clock synchronization
Specifications
General Test Conditions (unless otherwise noted)
Notes / Conditions
Supply Voltages
±35V
4Ω
400kHz
28dB
Load Impedance
Self-Oscillating Frequency
Gain Setting
No input signal, Adjustable
1Vrms input yields rated power
Electrical Data
Typical
Notes / Conditions
IR Devices Used
IRS2053M Audio Controller and Gate-Driver,
IRF6665 DirectFET MOSFETs
Modulator
Self-oscillating, second order sigma-delta modulation, analog input
Power Supply Range
Output Power CH1-3: (1% THD+N)
Output Power CH1-3: (10% THD+N)
± 25V to ±35V
120W
Bipolar power supply
1kHz, ±35V
1kHz, ±35V
170W
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Page 3 of 35
IRAUDAMP11 REV 1.0
Rated Load Impedance
Standby Supply Current
Total Idle Power Consumption
Channel Efficiency
8-4Ω
+75/-95mA
6W
Resistive load
No input signal
No input signal
Single-channel driven,
120W, Class D stage
90%
.
Audio Performance
Class D Notes / Conditions
Output
0.015%
THD+N, 1W
THD+N, 10W
THD+N, 60W
THD+N, 100W
0.01%
0.02%
0.03%
1kHz, Single-channel driven
A-weighted, AES-17 filter,
Single-channel operation
Self-oscillating – 400kHz
Dynamic Range
101dB
Residual Noise, 22Hz - 20kHzAES17
220V
Damping Factor
67
1kHz, relative to 4Ω load
Channel Separation
75dB
75dB
70dB
±1dB
±3dB
100Hz
1kHz
10kHz
Frequency Response : 20Hz-20kHz
: 20Hz-35kHz
1W, 4Ω - 8Ω Load
Physical Specifications
Dimensions
3.94”(L) x 2.83”(W) x 0.85”(H)
100 mm (L) x 72 mm (W) x 21.5 mm(H)
0.130kgm
Weight
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Page 4 of 35
IRAUDAMP11 REV 1.0
Connection Setup
Audio Signal Generator
CH1 CH2 CH3
Input
Frequency adjustor
DS1
VCC INDICATOR
IRF6665
VR1
IRS2053M
Output
Output
CH2 CH1 +B GND -B CH3
G
250W, 4Ω,
Non-inductive Resistors
35 V, 5 A DC supply
35 V, 5 A DC supply
Fig 1 Typical Test Setup
Connector Description
CH1 IN
CH2 IN
CH3 IN
SUPPLY
CH1 OUT
CH2 OUT
CH3 OUT
CN1
CN1
CN1
P1
P2
P2
Analog input for CH1
Analog input for CH2
Analog input for CH3
Positive and negative supply (+B / -B)
Output for CH1
Output for CH2
P3
Output for CH3
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Page 5 of 35
IRAUDAMP11 REV 1.0
Test Procedures
Test Setup:
1. Connect 4-200 W dummy loads to 3 output connectors (P2 and P3 as shown on Fig 1)
and an Audio Precision analyzer (AP).
2. Connect the Audio Signal Generator to CN1 for CH1~CH3 respectively (AP).
3. Set up the dual power supply with voltages of ±35V; current limit to 5A.
4. TURN OFF the dual power supply before connecting to On of the unit under test (UUT).
5. Connect the dual power supply to P1. as shown on Fig 1
Power up:
6. Turn ON the dual power supply. The ±B supplies must be applied and removed at the
same time.
7. The Blue LED should turn ON immediately and stay ON
8. Quiescent current for the positive supply should be 75mA 10mA at +35V.
9. Quiescent current for the negative supply should be 95mA 10mA at –35V.
Switching Frequency test
10. With an Oscilloscope, monitor the switching waveform at test points VS1~VS3. Adjust VR1
to set the self oscillating frequency to 400 kHz 25 kHz when DUT in clock synchronize
mode.
Functionality Audio Tests:
11. Set the signal generator to 1kHz, 20 mVRMS output.
12. Connect the audio signal generator to CN1(Input of CH1,CH2,CH3)
13. Sweep the audio signal voltage from 15 mVRMS to 1 VRMS
.
14. Monitor the output signals at P2/P3 with an oscilloscope. The waveform must be a non
distorted sinusoidal signal.
15. Observe that a 1 VRMS input generates an output voltage of 25.52 VRMS(CH1/CH2). The
ratio, R4x/(R3x) and R30x/(R31x), determines the voltage gain of IRAUDAMP11.
Test Setup using Audio Precision (Ap):
16. Use an unbalanced-floating signal from the generator outputs.
17. Use balanced inputs taken across output terminals, P2 and P3.
18. Connect Ap frame ground to GND at terminal P1.
19. Select the AES-17 filter(pull-down menu) for all the testing except frequency response.
20. Use a signal voltage sweep range from 15 mVRMS to 1 VRMS
.
21. Run Ap test programs for all subsequent tests as shown in Fig 2- Fig 7below.
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Page 6 of 35
IRAUDAMP11 REV 1.0
Performance and test graphs
10
5
2
1
0.5
0.2
0.1
%
0.05
0.02
0.01
0.005
0.002
0.001
100m
200m
500m
Color
1
2
5
10
20
50
100
200
W
Sweep
Trace
Line Style
Thick
Data
Axis
Comment
1
1
2
1
3
3
Red
Blue
Green
Solid
Solid
Solid
2
2
2
Anlr.THD+N Ratio
Anlr.THD+N Ratio
Anlr.THD+N Ratio
Left
Left
Left
CH1
CH2
±B Supply = ±35V, 4 Ω Resistive Load
Fig 2 IRAUDAMP11, THD+N versus Power, Stereo, 4 Ω
.
+4
+3
T
+2
+1
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
d
B
r
A
-10
20
50
100
200
500
1k
2k
5k
10k
20k
50k
100k 200k
Hz
CH1-Blue; CH2-Yellow; CH3-Red
±B Supply = ±35V, 4 Ω Resistive Load
Fig 3 IRAUDAMP11, Frequency response
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Page 7 of 35
IRAUDAMP11 REV 1.0
Red
Blue
CH1, 10W Output
CH1, 50W Output
Fig 4 THD+N Ratio vs. Frequency
+0
-20
-40
d
B
V
-60
-80
-100
20
50
100
200
500
1k
2k
5k
10k
20k
Hz
Sweep Trace Color
Line Style Thick Data
Axis Comment
1
1
2
1
2
1
Yellow Solid
2
2
2
Fft.Ch.1 Ampl Left CH2
Fft.Ch.2 Ampl Left CH3
Fft.Ch.1 Ampl Left CH1
Blue
Red
Solid
Solid
Fig 5, 1V output Frequency Spectrum
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Page 8 of 35
IRAUDAMP11 REV 1.0
+0
-25
-50
d
B
V
-75
-100
-125
-150
10
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
Sweep Trace Color
Line Style Thick Data
Axis Comment
1
1
2
1
2
1
Red
Blue
Yellow Solid
Solid
Solid
2
2
2
Fft.Ch.1 Ampl Left
Fft.Ch.2 Ampl Left
Fft.Ch.1 Ampl Left
CH1
CH3
CH2
No signal, Self Oscillator @ 400kHz
Fig 6, IRAUDAMP11 Noise Floor
.
+ 0
-10
-20
-30
-40
-50
-60
-70
-80
-90
d
B
r
A
-100
20
50
100
200
500
1k
2k
5k
10k
20k
Hz
S weep
Trace
Color
Cy an
Y ellow
Red
M agenta
B lue
Cy an
Line S ty le
Thic k
Data
A x is
Com m ent
1
3
4
5
6
7
1
1
1
1
1
1
S olid
S olid
S olid
S olid
S olid
S olid
2
2
2
2
1
1
A nlr.A m pl
A nlr.A m pl
A nlr.A m pl
A nlr.A m pl
A nlr.A m pl
A nlr.A m pl
Left
Left
Left
Left
Left
Left
CH3_on;CH1_off
CH1_on;CH3_off
CH2_on;CH3_off
CH3_on;CH2_off
CH2_on;CH1_off
Ch1_on;CH2_off
Fig 7, Channel separation vs. frequency
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Page 9 of 35
IRAUDAMP11 REV 1.0
Clipping characteristics
Red Trace: Total Distortion + Noise Voltage
Green Trace: Output Voltage
60W / 4, 1kHz, THD+N=0.02%
174W / 4, 1kHz, THD+N=10%
Measured Output and Distortion Waveforms(CH1/CH2)
Fig 8 Clipping Characteristics
.
Soft Clipping
IRS2053M has Clipping detection function, it monitors error voltage in COMP pin with a window
comparator and pull an open drain nmos referenced to GND. Threshold to detect is at 10% and
90% of VAA-VSS. Each channel has independent CLIP outputs. Once IRS2053M detects
Clipping, the CLIP pin will generate pulses to trigger soft clipping circuit as Fig 9, which limits
output’s maximum power.
Fig10 shows 20Hz and 20 kHz THD+N versus Power graph in CH3; it shows limitation of output’s
power with different frequency.
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Page 10 of 35
IRAUDAMP11 REV 1.0
Soft Clipping
R28A
1K
Q5
VAA
DTA144EKA
C15A
10uF, 16V 470K
R7A
C6A
1uF,50V
R5A
47K
R29A
220K
D3A
GND
Audio signal INPUT
C0A
1N4148
R6A
47K
R27A
3.3K
CLIP Detection
IN-
10uF,50V
G
R3A
1K
Q6
C5A
MMBFJ112
10uF, 50V
VSS
GND
Fig 9 Soft Clipping Circuit
10
5
2
1
0.5
0.2
0.1
%
0.05
0.02
0.01
0.005
0.002
0.001
100m 200m
500m
1
2
5
10
20
50
100
300
W
Sweep Trace Color Line Style Thick Data
Axis Comment
1
2
1
1
Red
Blue
Solid
Solid
2
2
Anlr.THD+N Ratio Left
Anlr.THD+N Ratio Left
20Hz
20kHz
±B Supply = ±35V, 4 Ω Resistive Load
Fig 10 IRAUDAMP11/CH3, THD+N versus Power, Stereo, 4 Ω
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Page 11 of 35
IRAUDAMP11 REV 1.0
Efficiency
Fig 11 shows efficiency characteristics of the IRAUDAMP11. The high efficiency is achieved by
following major factors:
1) Low conduction loss due to the DirectFETs offering low RDS(ON)
2) Low switching loss due to the DirectFETs offering low input capacitance for fast rise and
fall times
Secure dead-time provided by the IRS2053M, avoiding cross-conduction.
Efficiency (%)
100%
90%
80%
70%
60%
AMP11 35V 4ohms
50%
40%
30%
20%
10%
0%
0
50
100
150
Output power (W)
Fig 11, IRAUDAMP11 4 ohms load Stereo, ±B supply = ±35V
Thermal Considerations
With this high efficiency, the IRAUDAMP11 design can handle one-eighth of the continuous rated
power, which is generally considered to be a normal operating condition for safety standards,
without additional heatsinks or forced air-cooling.
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Page 12 of 35
IRAUDAMP11 REV 1.0
Thermal Interface Material’s Pressure Control
The pressure between DirectFET & TIM (Thermal Interface Material) is controlled by depth of Heat
Spreader’s groove. Choose TIM which is recommended by IR. (Refer to AN-1035 for more
details). TIM’s manufacturer thickness, conductivity, & etc. determine pressure requirement.
Below shows selection options recommended:
Fig 12 TIM Information
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Page 13 of 35
IRAUDAMP11 REV 1.0
Check the TIM’s compression deflection with constant rate of strain (example as Fig.13) base on
manufacturer’s datasheet. According to the stress requirement, find strain range for the TIM. Then,
calculate heat spreader groove depth as below:
Groove Depth=DirectFET’s Height +TIM’s Thickness*strain
**DirectFET’s height should be measured from PCB to the top of DirectFET after reflow. The
average height of IRF6665 is 0.6mm.
Fig 13 compression deflection with constant rate of strain
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Page 14 of 35
IRAUDAMP11 REV 1.0
Power Supply Rejection Ratio (PSRR)
The IRAUDAMP11 obtains good power supply rejection ratio of -68 dB at 1kHz shown in Fig 14.
With this high PSRR, IRAUDAMP11 accepts any power supply topology when the supply voltages
fit between the min and max range.
+0
-10
-20
-30
-40
d
B
V
-50
-60
-70
-80
-90
20
50
100
200
500
1k
Hz
2k
5k
10k
20k
40k
Sweep Trace Color
Line Style Thick Data
Axis Comment
1
1
Magenta Solid
2
Anlr.Ampl Left
Fig 14 Power Supply Rejection Ratio (PSRR)
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Page 15 of 35
IRAUDAMP11 REV 1.0
Short Circuit Protection Response
Figs 15-16 show over current protection reaction time of the IRAUDAMP11 in a short circuit event.
As soon as the IRS2053M detects an over current condition, it shuts down PWM. After one
second, the IRS2053M tries to resume the PWM. If the short circuit persists, the IRS2053M
repeats try and fail sequences until the short circuit is removed.
Short Circuit in Positive and Negative Load Current
CSD pin
CSD pin
VS pin
VS pin
Load current
Positive OCP
Load current
Negative OCP
Fig 15 Positive and Negative OCP Waveforms
.
OCP Waveforms Showing CSD Trip and Hiccup
CSD pin
CSD pin
VS pin
VS pin
Load current
Load current
Fig 16 OCP Response with Continuous Short Circuit
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Page 16 of 35
IRAUDAMP11 REV 1.0
IRAUDAMP11 Overview
The IRAUDAMP11 features a 3CH self-oscillating type PWM modulator for the smallest space,
highest performance and robust design. This topology represents an analog version of a second-
order sigma-delta modulation having a Class D switching stage inside the loop. The benefit of the
sigma-delta modulation, in comparison to the carrier-signal based modulation, is that all the error
in the audible frequency range is shifted to the inaudible upper-frequency range by nature of its
operation. Also, sigma-delta modulation allows a designer to apply a sufficient amount of error
correction.
The IRAUDAMP11 self-oscillating topology consists of following essential functional blocks.
Front-end integrator
PWM comparator
Level shifters
Gate drivers and MOSFETs
Output LPF
Integrator
Referring to Fig 17 below, the input operational amplifier of the IRS2053M forms a front-end
second-order integrator with R3x, C2x, C3x, and R2x. The integrator that receives a rectangular
feedback signal from the PWM output via R4x and audio input signal via R3x generates a
quadratic carrier signal at the COMP pin. The analog input signal shifts the average value of the
quadratic waveform such that the duty cycle varies according to the instantaneous voltage of the
analog input signal.
PWM Comparator
The carrier signal at the COMP pin is converted to a PWM signal by an internal comparator that
has a threshold at middle point between VAA and VSS. The comparator has no hysteresis in its
input threshold.
Level Shifters
The internal input level-shifter transfers the PWM signal down to the low-side gate driver section.
The gate driver section has another level-shifter that level shifts up the high-side gate signal to the
high-side gate driver section.
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Page 17 of 35
IRAUDAMP11 REV 1.0
Gate Drivers and DirectFETs
The received PWM signal is sent to the dead-time generation block where a programmable
amount of dead time is added into the PWM signal between the two gate output signals of LO and
HO to prevent potential cross conduction across the output power DirectFETs. The high-side level-
shifter shifts up the high-side gate drive signal out of the dead-time block.
Each channel of the IRS2053M’s drives two DirectFETs, high- and low-sides, in the power stage
providing the amplified PWM waveform.
Output LPF
The amplified PWM output is reconstructed back to an analog signal by the output LC LPF.
Demodulation LC low-pass filter (LPF) formed by L1 and C13, filters out the Class D switching
carrier signal leaving the audio output at the speaker load. A single stage output filter can be used
with switching frequencies of 400 kHz and greater; a design with a lower switching frequency may
require an additional stage of LPF.
Fig 17 Simplified Block Diagram of IRAUDAMP11 Class D Amplifier
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Page 18 of 35
IRAUDAMP11 REV 1.0
Functional Descriptions
IRS2053M Gate Driver IC
The IRAUDAMP11 uses the IRS2053M, a 3 Channel high-voltage (up to 200 V), high-speed
power MOSFET driver with internal dead-time and protection functions specifically designed for
Class D audio amplifier applications. These functions include OCP and UVP. The IRS2053M
integrates bi-directional over current protection for both high-side and low-side MOSFETs. The
dead-time can be selected for optimized performance according to the size of the MOSFET,
minimizing dead-time while preventing shoot-through. As a result, there is no gate-timing
adjustment required externally. Selectable dead-time through the DT pin voltage is an easy and
reliable function which requires only two external resistors, R12 and R13 as shown on Fig 18 or
Fig 24 below.
The IRS2053M offers the following functions.
PWM modulator
Dead-time insertion
Over current protection
Under voltage protection
Level shifters
Refer to IRS2053M datasheet and AN-1158 for more details.
L1A
CH3 OUTPUT
GND
22uH
R24A 2.2K
R14A
4.7R
R32A 10R
RpA 95C
GND
R28A
C6A
Q5
Q1A
IRF6665
R32B 10R
R32C 10R
RpB 95C
RpC 95C
R20A
22R
R12A
N/A
1K
DTA144EKA
R4A
100K 1%
Q2A
IRF6665
R9A
22R
R7A
R5A
47K
470K
1uF,50V
D3A R6A
GND
GND
C12A
C15A
R15A
10K R17A
R29A
220K
10uF, 16V
1N4148 47K
C2A 2.2nF,50V
C3A 2.2nF,50V
37
38
39
40
41
10K
DS
24
R1A
22K
1K
VB3
R16A
220pF
10K
10K
R27A
3.3K
R31A
R30A
C4A
1nF,50V
CH3 INPUT
C1A 100pF, 50V
R3A
R2A 120R
COMP3
IN3
23
22
21
20
3.9K
CSH3
NC
GND
R31B
10K
R30B
15K
L1B
R24B 2.2K
R24C 2.2K
R18A
4.7R
C5A 10uF, 16V
D2A 1N4148
CH2 OUTPUT
G
GND
GND
VSS
LO3
22uH
L1C
CN1
CH3
C12B
220pF
IC3
IC1
GND
GND
7
6
5
4
3
2
1
8
9
GND
R6 10R
6
2OUT
2IN-
2IN+
VDD
1IN+
1IN-
3OUT
C6 4.7uF,10V
C7
IRS2053
COM2
GND
VSS
C9B
10uF,16V
R14B
GND5
GND4
3IN-
3IN+
GND
4IN+
4IN-
42
10
11
12
13
14
-B
19
18
VCC2
LO2
GND
VAA
43
CH1 OUTPUT
CH2
GND2
CH1
3
R7 10R
R2B
VAA
IN2
22uH
R3B
5.6K
22K
5.6K
22K
4.7uF,10V
4.7R
1
CH2 INPUT
44
45
46
47
48
17
16
15
14
13
C2B
C5B
C1B
C5C
C1C
10uF, 16V
R1B
1nF,50V C4B
C3B
LO1
NC
1OUT
4OUT
Q1B
IRF6665
GND
R20B
22R
120R
TLC084
COMP2
IN1
R18C
D2C
100pF, 50V
R3C
2.2nF,50V
15K
2.2nF,50V
C2C
R31C
10K
R30C
4.7R
CSH1
VB1
HO1
R2C
CH1 INPUT
C4C
1nF,50V
1N4148
C12C
10uF, 16V
R1C
120R
Q2B
IRF6665
C10
C11
4.7uF,10V
C3C
2.2nF,50V
COMP1
CSD
R9B
22R
220pF
R16C
3.9K
4.7uF,10V
GND
100pF, 50V
2.2nF,50V
+B
GND
R17C
10K
R23A
100k
C17A
1000uF,35V
C17C
0.1uF,50V
R15C
10K
R14
10R
R15
10R
R1
Q1C
IRF6665
R20C
22R
R22
10R
GND
-B
0R0 or N/A
CSD
R12B
N/A
R4C
100K 1%
R23B
100k
C17B
1000uF,35V
DSA DSB DSC PROT
Q2C
IRF6665
R9C
22R
C17D
0.1uF,50V
R4B
100K 1%
D2B
1N4148
R18B
4.7R
D1B
R12C
N/A
C10B
R17B
10K
R15B
D4
1N4148
R4 0R0 or N/A
10K
0.1uF,50V
R16B
3.9K
P3
1N4148
SD
VAA
1
R22B 10K
GND
GND
CH3 OUTPUT
2
3
4
R51 10k Z7 39V
+B
-B
+5v
R52 10k
Z8 39V
OVP
R43
R47
Q8 ZX5T853
C1
0.1uF,50V
330R,1W
R45
330R,1W
R25A 100K
CH3 OUTPUT
CH2 OUTPUT
CH1 OUTPUT
R25B 100K
R25C 100K
33k
Z5
5.6V
R3
22k
C40
IC2
N/A
LTC1799
VR1
10K
1
2
3
5
4
VCC OUT
GND
SET DIT
C41
N/A
Z6
5.6V
P2
CH1 OUTPUT
GND
4CH2
3
R46
33k
R44
GND
CH2 OUTPUT
2
1CH1
Q9
ZX5T953
1
2
3
4
8
7
6
5
510R,1W
1A VCC
-5v
Z2
R36
5.1k
1B
2Y
1Y
2B
15V
Z4
18V
R54
10k
R57
47k
R37
47k
R56
47k
IC9
GND 2A
IC8
VCC
Q1
L5 220uH
R49 10R
R50
47k
1
2
8
7
6
5
SW
BST
VIN
Z3
39V
TC7W00FFCT-ND
R53
C35
2.2nF,50V
Q2
R39
100k
C34
VCC
R31
5.1k
10k
MMBT5401
R42
3.3k
3
4
0.01uF, 25V
RCL RON/SD
FX491
R41
120k
P1
RTN
FB
Q4
C32
2.2uF, 50V
C61
+B
GND
-B
3
2
1
D7
R40
100k
MMBT5551
C36
R58
47k
R32
1k
R38
10R
LM5007
Z1
24V
0.01uF, 50V
R55
47k
C33
0.1uF, 50V
0.01uF, 50V
OVP
UVP
10k
C62
R61
0.01uF, 50V
10k
R62
GND
GND
For EMI
Fig 18 System-level View of IRAUDAMP11
www.irf.com
Page 19 of 35
IRAUDAMP11 REV 1.0
Self-Oscillating Frequency
Self-oscillating frequency is determined by the total delay time along the control loop of the
system; the propagation delay of the IRS2053M, the DirectFETs switching speed, the time-
constant of front-end integrator (R2, R3, R4, C2, C3 ). Variations in +B and –B supply voltages
also affect the self-oscillating frequency.
The self-oscillating frequency changes with the duty ratio. The frequency is highest at idling. It
drops as duty cycle varies away from 50%.
Adjustments of Self-Oscillating Frequency
Use R2 to set different self-oscillating frequencies. The PWM switching frequency in this type of
self-oscillating switching scheme greatly impacts the audio performance, both in absolute
frequency and frequency relative to the other channels. In absolute terms, at higher frequencies,
distortion due to switching-time becomes significant, while at lower frequencies, the bandwidth of
the amplifier suffers. In relative terms, interference between channels is most significant if the
relative frequency difference is within the audible range.
Normally, when adjusting the self-oscillating frequency of the different channels, it is suggested to
either match the frequencies accurately, or have them separated by at least 25kHz. Under the
normal operating condition with no audio input signal, the switching-frequency is set around
400kHz in the IRAUDAMP11.
www.irf.com
Page 20 of 35
IRAUDAMP11 REV 1.0
Selectable Dead-time
The dead-time of the IRS2053 is set based on the voltage applied to the DT pin. Fig 19 lists the
suggested component value for each programmable dead-time between 45 and 105 ns.
All the IRAUDAMP11 models use DT1 (45ns) dead-time.
Dead-time Mode
R1
R2
DT/SD Voltage
Vcc
DT1
DT2
DT3
DT4
<10k
5.6k
8.2k
Open
Open
4.7k
3.3k
<10k
0.46 x Vcc
0.29 x Vcc
COM
Recommended Resistor Values for Dead Time Selection
Dead-time
IRS2053M
Vcc
45nS
65nS
>0.5mA
R1
85nS
DT
105nS
R2
VDT
COM
0.23xVcc 0.36xVcc 0.57xVcc
Vcc
Fig 19 Dead-time Settings vs. VDT Voltage
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Page 21 of 35
IRAUDAMP11 REV 1.0
Protection System Overview
The IRS2053M integrates over current protection (OCP) inside the IC. The rest of the protections,
such as over-voltage protection (OVP), under-voltage protection (UVP), and over temperature
protection (OTP), are detected externally to the IRS2053M (Fig 20).
The external shutdown circuit will disable the output by pulling down CSD pins, (Fig 21). If the
fault condition persists, the protection circuit stays in shutdown until the fault is removed.
R60
15k
SD
GND
Q5
MMBT5551
Z4
R54
10k
18V
R57
47k
IC6
R51
22k
R56
47k
LM26CIM5-XHA
1
5
4
OS
HT
GND
R50
47k
2
3
Z3
39V
R59
22k
VCC VT
R53
10k
OTP
R52
15k
D51
4.7V
Q4
MMBT5551
R58
47k
R55
47k
OVP
UVP
-B
Fig 20 DCP, OTP, UVP and OVP Protection Circuits
.
Fig 21 Simplified Functional Diagram of OCP
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Page 22 of 35
IRAUDAMP11 REV 1.0
Over-Current Protection (OCP)
Low-Side Current Sensing
The low-side current sensing feature protects the low side DirectFET from an overload condition
from negative load current by measuring drain-to-source voltage across RDS(ON) during its on state.
OCP shuts down the switching operation if the drain-to-source voltage exceeds a preset trip level.
The voltage setting on the OCSET pin programs the threshold for low-side over-current sensing.
When the VS voltage becomes higher than the OCSET voltage during low-side conduction, the
IRS2053 turns the outputs off and pulls CSD down to -VSS.
High-Side Current Sensing
The high-side current sensing protects the high side DirectFET from an overload condition from
positive load current by measuring drain-to-source voltage across RDS(ON) during its on state. OCP
shuts down the switching operation if the drain-to-source voltage exceeds a preset trip level.
High-side over-current sensing monitors drain-to-source voltage of the high-side DirectFET during
the on state through the CSH and VS pins. The CSH pin detects the drain voltage with reference
to the VS pin, which is the source of the high-side DirectFET. In contrast to the low-side current
sensing, the threshold of the CSH pin to trigger OC protection is internally fixed at 1.2V. An
external resistive divider R15, R16 and R17 are used to program a threshold as shown in Fig 20.
An external reverse blocking diode D1 is required to block high voltage feeding into the CSH pin
during low-side conduction. By subtracting a forward voltage drop of 0.6V at D1, the minimum
threshold which can be set for the high-side is 0.6V across the drain-to-source.
Over-Voltage Protection (OVP)
OVP is provided externally to the IRS2053M. OVP shuts down the amplifier if the bus voltage
between GND and -B exceeds 39V. The threshold is determined by a Zener diode Z3. OVP
protects the board from harmful excessive supply voltages, such as due to bus pumping at very
low frequency-continuous output in stereo mode.
Under-Voltage Protection (UVP)
UVP is provided externally to the IRS2053M. UVP prevents unwanted audible noise output from
unstable PWM operation during power up and down. UVP shuts down the amplifier if the bus
voltage between GND and -B falls below a voltage set by Zener diode Z4.
www.irf.com
Page 23 of 35
IRAUDAMP11 REV 1.0
Offset Null (DC Offset) Adjustment
The IRAUDAMP11 requires no output-offset adjustment. DC offsets are tested to be less than ±20
mV.
Over-Temperature Protection (OTP)
A Preset Thermostat IC, IC6 in Fig 19, is placed in close proximity to the heatsink which has 6
DirectFETs under it; and monitors heatsink temperature. If the heatsink temperature rises above
100 C, the OTP shuts down all 3 channels by pulling down the CSD pins of the IRS2053M. OTP
recovers once the temperature has cooled down.
Click and POP Noise Reduction
Thanks to the click and pop elimination function built into the IRS2053M, the IRAUDAMP11 does
not require any additional components for this function.
Power Supply Requirements
For convenience, the IRAUDAMP11 has all the necessary housekeeping power supplies onboard
and only requires a pair of symmetric power supplies. Or use the IRAUDPS1 reference design
which is a 12 volt systems Audio Power Supply for automotive applications designed to provide
voltage rails (+B and –B) for Class D audio power amplifiers .
House Keeping Power Supply
The internally-generated housekeeping power supplies include ±5V for analog signal processing,
and +12V supply (VCC) referred to the negative supply rail -B for DirectFET gate drive. The gate
driver section of the IRS2053M uses VCC to drive gates of the DirectFETs. VCC is referenced to –
B (negative power supply). D2, R18 and C10 form a bootstrap floating supply for the HO gate
driver.
Bus Pumping
When the IRAUDAMP11 is running in stereo mode, the bus pumping effect takes place with low
frequency, high output. Since the energy flowing in the Class D switching stage is bi-directional,
there is a period where the Class D amplifier feeds energy back to the power supply. The majority
of the energy flowing back to the supply is from the energy stored in the inductor in the output LPF.
www.irf.com
Page 24 of 35
IRAUDAMP11 REV 1.0
Usually, the power supply has no way to absorb the energy coming back from the load.
Consequently the bus voltage is pumped up, creating bus voltage fluctuations.
Following conditions make bus pumping worse:
1. Lower output frequencies (bus-pumping duration is longer per half cycle)
2. Higher power output voltage and/or lower load impedance (more energy transfers between
supplies)
3. Smaller bus capacitance (the same energy will cause a larger voltage increase)
The OVP protects IRAUDAMP11 from failure in case of excessive bus pumping. One of the
easiest counter measures of bus pumping is to drive both of the channels in a stereo configuration
out-of-phase so that one channel consumes the energy flow from the other and does not return it
to the power supply. Bus voltage detection monitors only +B supply, assuming the bus pumping
on the supplies is symmetric in +B and -B supplies.
Blue: VS of CH3;Cyan: VS of CH2;Magenta: Voltage of +B;Green:Current of C13A
Fig 22 Auto-phase sync clock’s BUS Pumping when idling
www.irf.com
Page 25 of 35
IRAUDAMP11 REV 1.0
Load Impedance
Each channel is optimized for a 4 Ω speaker load in half bridge.
Input Signal and Gain Setting
A proper input signal is an analog signal ranging from 20Hz to 20kHz with up to 3 VRMS amplitude
with a source impedance of no more than 600 Ω. Input signal with frequencies from 30kHz to
60kHz may cause LC resonance in the output LPF, causing a large reactive current flowing
through the switching stage, especially with greater than 8 Ω load impedances, and the LC
resonance can activate OCP.
The IRAUDAMP11 has an RC network called a Zobel network (R21 and C14) to damp the
resonance and prevent peaking frequency response with light loading impedance. (Fig 23)
Fig 23 Output Low Pass Filter and Zobel Network
Gain Setting
The ratio of resistors R4A~C/R1A~C in Fig 24 sets voltage gain. The IRAUDAMP11 has no on board
volume control. To change the voltage gain, change the input resistor term R1A~C. Changing R4A~C
affects PWM control loop design and may result poor audio performance.
www.irf.com
Page 26 of 35
IRAUDAMP11 REV 1.0
L1A
CH3 OUTPUT
GND
Schematic
22uH
R24A 2.2K
R14A
4.7R
R32A 10R
RpA 95C
GND
R28A
C6A
Q5
Q1A
IRF6665
R32B 10R
R32C 10R
RpB 95C
RpC 95C
R20A
22R
R12A
N/A
1K
DTA144EKA
R4A
100K 1%
Q2A
IRF6665
R9A
22R
R7A
R5A
47K
470K
1uF,50V
D3A R6A
GND
GND
C12A
C15A
R15A
10K R17A
R29A
220K
10uF, 16V
1N4148 47K
C2A 2.2nF,50V
C3A 2.2nF,50V
37
38
39
40
41
10K
DS
24
R1A
22K
1K
VB3
R16A
220pF
10K
10K
R27A
3.3K
R31A
R30A
C4A
1nF,50V
CH3 INPUT
C1A 100pF, 50V
R3A
R2A 120R
COMP3
IN3
23
22
21
20
3.9K
CSH3
NC
GND
R31B
10K
R30B
15K
L1B
R24B 2.2K
R24C 2.2K
R18A
4.7R
C5A 10uF, 16V
D2A 1N4148
CH2 OUTPUT
G
GND
GND
VSS
LO3
22uH
L1C
CN1
C12B
220pF
IC3
IC1
GND
GND
7
6
5
4
3
2
1
8
9
10
11
12
13
14
GND
R6 10R
CH3 6
GND5
GND4
CH2 3
GND2
CH1 1
2OUT
2IN-
2IN+
VDD
1IN+
1IN-
3OUT
C6 4.7uF,10V
C7
IRS2053
COM2
GND
VSS
C9B
10uF,16V
R14B
3IN-
3IN+
GND
4IN+
4IN-
42
-B
19
18
VCC2
LO2
GND
VAA
43
CH1 OUTPUT
R7 10R
R2B
VAA
IN2
22uH
R3B
5.6K
22K
5.6K
22K
4.7uF,10V
4.7R
CH2 INPUT
44
45
46
47
48
17
16
15
14
13
C2B
C5B
C1B
C5C
C1C
10uF, 16V
R1B
1nF,50V C4B
C3B
LO1
NC
1OUT
4OUT
Q1B
IRF6665
GND
R20B
22R
120R
TLC084
COMP2
IN1
R18C
D2C
100pF, 50V
R3C
2.2nF,50V
15K
2.2nF,50V
C2C
R31C
10K
R30C
4.7R
CSH1
VB1
HO1
R2C
CH1 INPUT
C4C
1nF,50V
1N4148
C12C
10uF, 16V
R1C
120R
Q2B
IRF6665
C10
C11
4.7uF,10V
C3C
2.2nF,50V
COMP1
CSD
R9B
22R
220pF
R16C
3.9K
4.7uF,10V
GND
100pF, 50V
2.2nF,50V
+B
GND
R17C
10K
R23A
100k
C17A
1000uF,35V
C17C
0.1uF,50V
R15C
10K
R14
10R
R15
10R
R1
Q1C
IRF6665
R20C
22R
R22
10R
GND
-B
0R0 or N/A
CSD
R12B
N/A
R4C
100K 1%
R23B
100k
C17B
1000uF,35V
DSA DSB DSC PROT
Q2C
IRF6665
R9C
22R
C17D
0.1uF,50V
R4B
100K 1%
D2B
1N4148
R18B
4.7R
D1B
R12C
N/A
C10B
R17B
10K
R15B
D4
1N4148
R4 0R0 or N/A
10K
0.1uF,50V
R16B
3.9K
P3
1N4148
SD
VAA
1
R22B 10K
GND
GND
CH3 OUTPUT
2
3
4
R51 10k Z7 39V
+B
-B
+5v
R52 10k
Z8 39V
OVP
R43
R47
Q8 ZX5T853
C1
0.1uF,50V
330R,1W
R45
330R,1W
R25A 100K
CH3 OUTPUT
CH2 OUTPUT
CH1 OUTPUT
R25B 100K
R25C 100K
33k
Z5
5.6V
R3
22k
C40
IC2
N/A
LTC1799
VR1
10K
1
2
3
5
4
VCC OUT
GND
SET DIT
C41
N/A
Z6
5.6V
P2
CH1 OUTPUT
GND
4CH2
3
R46
33k
R44
GND
CH2 OUTPUT
2
1CH1
Q9
ZX5T953
1
2
3
4
8
7
6
5
510R,1W
1A VCC
-5v
Z2
R36
5.1k
1B
2Y
1Y
2B
15V
Z4
18V
R54
10k
R57
47k
R37
47k
R56
47k
IC9
GND 2A
IC8
VCC
Q1
L5 220uH
R49 10R
R50
47k
1
2
8
7
6
5
SW
BST
VIN
Z3
39V
TC7W00FFCT-ND
R53
C35
2.2nF,50V
Q2
R39
100k
C34
VCC
R31
5.1k
10k
MMBT5401
R42
3.3k
3
4
0.01uF, 25V
RCL RON/SD
FX491
R41
120k
P1
RTN
FB
Q4
C32
2.2uF, 50V
C61
+B
GND
-B
3
2
1
D7
R40
100k
MMBT55 51
C36
R58
47k
R32
1k
R38
10R
LM5007
Z1
24V
0.01uF, 50V
R55
47k
C33
0.1uF, 50V
0.01uF, 50V
OVP
UVP
10k
C62
R61
0.01uF, 50V
10k
R62
GND
GND
For EMI
Fig 24 IRAUDAMP11 Schematic
www.irf.com
Page 27 of 35
IRAUDAMP11 REV 1.0
IRAUDAMP11 Fabrication Materials
Table 1 IRAUDAMP11 Electrical Bill of Materials
Quantity
Value
Description
CAP CER .1UF 50V 10% X7R
0603
CAP CERAMIC 100PF 50V NP0
0603
Designator
Part Number
490-1519-1-ND
399-1061-1-ND
Vender
Murata Electronics
North America
1
3
0.1uF,50V
100pF, 50V
C1
C1A, C1B, C1C
C2A, C2B, C2C,
C3A, C3B,
Kemet
CAP CER 2200PF 50V 10%
X7R 0603
Murata Electronics
North America
7
2.2nF,50V
C3C, C35
490-1500-1-ND
CAP 1000PF 50V
CERAMICX7R 0603
3
3
1nF,50V
C4A, C4B, C4C
C5A, C5B, C5C
399-1082-1-ND
PCE4179CT-ND
Kemet
10uF, 16V
CAP 10UF 16V HA ELECT SMD
CAP CERM 4.7UF 10V Y5V
0805
Panasonic - ECG
4
1
2
1
2
3
3
3
3
4
2
2
3
1
1
4.7uF,10V
1uF,50V
C6, C7, C10, C11
C6A
478-1429-1-ND
490-4736-1-ND
445-1601-1-ND
493-2079-1-ND
490-3347-1-ND
311-1140-1-ND
490-1483-1-ND
495-1315-ND
AVX Corporation
Murata Electronics
North America
CAP CER 1UF 50V X7R 0805
CAP CER 10UF 16V X7R 20%
1206
CAP 100UF 4V ELECT WX
SMD
10uF, 16V
100uF,4V
10uF,16V
0.1uF,50V
220pF
C8, C15A
TDK Corporation
C9
Nichicon
Murata Electronics
North America
CAP CER 10UF 16V Y5V 0805
CAP .10UF 50V CERAMIC X7R
0805
CAP CER 220PF 50V 10% X7R
0603
CAP .47UF 400V METAL
POLYPRO
CAP FILM MKP .1UF 63VDC
2%
CAP 10000PF 25V CERM X7R
0603
CAP 1000UF 35V ELECT SMG
RAD
C9A, C9B
C10A, C10B, C10C
C12A, C12B, C12C
C13A, C13B, C13C
Yageo
Murata Electronics
North America
0.47uF, 400V
0.1uF, 63V
0.01uF, 25V
1000uF,35V
0.1uF,50V
0.1uF,100V
2.2uF, 50V
0.1uF, 50V
EPCOS Inc
Vishay/BC
Components
C14A, C14B, C14C
C16A, C16B,
C16C,C34
BC2054-ND
PCC1763CT-ND
565-1086-ND
Panasonic - ECG
United Chemi-Con
Kemet
C17A, C17B
C17C, C17D
C19A, C19B, C19C
C32
CAP .10UF 50V CERAMIC X7R
1206
CAP CER .10UF 100V X7R
10% 0805
399-1249-1-ND
445-1418-1-ND
490-3367-1-ND
490-1666-1-ND
TDK Corporation
Murata Electronics
North America
Murata Electronics
North America
CAP CER 2.2UF 50V X7R 1206
CAP CER .1UF 50V 10% X7R
0805
C33
CAP CER 10000PF 50V 20%
X7R 0603
Murata Electronics
North America
1
1
2
0.01uF, 50V
22uF, 16V
N/A
C36
C37
490-1511-1-ND
445-3945-1-ND
N/A
CAP CER 22UF 16V X7R 1210
TDK Corporation
C40, C41
CAP 10000PF 50V CERAMIC
X7R 0603
TERMINAL BLOCK 3.5MM
6POS PCB
2
1
0.01uF, 50V
Header 6
C61, C62
399-1091-1-ND
ED1518-ND
Kemet
On Shore Technology
Inc
CN1
D1A, D1B, D1C,
D2A, D2B, D2C,
D3, D3A, D4
DIODE SWITCH 100V 400MW
9
1
1N4148
DIODE1
SOD-123
DIODE SCHOTTKY 100V 1.5A
SMA
LED 468NM BLUE CLEAR 0603
SMD
1N4148W-FDICT-ND
10MQ100NPBFCT-ND
160-1646-1-ND
Diodes Inc
D7
DS1, DSA, DSB,
DSC
Vishay/Semiconductors
4
1
BLUE LED
IRS2053
Lite-On Inc
3ch Audio Class D Controller
IC OSCILLATOR RES SET
TSOT23-5
IC OPAMP GP 10MHZ QUAD
14SOIC
IC1
IC2
IC3
IR2053MPBF
LTC1799CS5#TRMPBFCT-
ND
International Rectifier
1
1
LTC1799
TLC084
Linear Technology
Texas Instruments
296-7287-1-ND
www.irf.com
Page 28 of 35
IRAUDAMP11 REV 1.0
TC7W00FFCT-
ND
IC GATE NAND DUAL 2INPUT
8-SOP
1
IC8
TC7W00FFCT-ND
Toshiba
National
1
3
LM5007
22uH
IC BUCK ADJ .5A 8LLP
IC9
LM5007SDCT-ND
7G14A-220M-B
Semiconductor
Class D inductor, 22uH
POWER INDUCTOR 220UH
0.49A SMD
CONN TERM BLOCK PCB
5.0MM 3POS
L1A, L1B, L1C
Inductors,Inc.
SUMIDA AMERICA
COMPONENTS INC
1
1
220uH
L5
308-1538-1-ND
281-1415-ND
Header 3
P1
Weidmuller
On Shore Technology
Inc
TERMINAL BLOCK 3.5MM
4POS PCB
2
1
SP OUT
P2, P3
PROT
ED1516-ND
RED LED
LED RED CLEAR 0603 SMD
TRANS HP NPN 60V 1000MA
SOT23-3
160-1181-1-ND
Lite-On Inc
1
FX491
Q1
Q1A, Q1B, Q1C,
Q2A,
FMMT491CT-ND
Diodes/Zetex
MOSFET N-CH 100V 4.2A
DIRECTFET
TRANS PNP 150V 350MW
SMD SOT23-3
TRANS NPN 160V 350MW
SMD SOT23-3
TRAN DIGITL PNP 50V 30MA
SOT-346
IC SWITCH ANALOG N-CH
SOT-23
TRANSISTOR 4.5A 100V SOT-
89
6
1
2
1
1
1
IRF6665
MMBT5401
MMBT5551
DTA144EKA
MMBFJ112
ZX5T853
Q2B, Q2C
IRF6665
International Rectifier
Diodes Inc
Q2
Q3, Q4
Q5
MMBT5401-FDICT-ND
MMBT5551-FDICT-ND
DTA144EKAT146CT-ND
MMBFJ112CT-ND
Diodes Inc
Rohm Semiconductor
Fairchild
Q6
Semiconductor
Q8
ZX5T853ZCT-ND
Diodes/Zetex
TRANSISTOR PNP 3.5A 100V
SOT-89
1
1
ZX5T953
0R0
Q9
R1
ZX5T953ZCT-ND
P0.0GCT-ND
Diodes/Zetex
RES 0.0 OHM 1/10W 0603 SMD
Panasonic - ECG
RES 22K OHM 1/10W 5% 0603
4
3
3
2
3
22K
120R
1K
SMD
R1A, R1B, R1C, R3
R2A, R2B, R2C
R3A, R13, R32
R3B, R3C
RHM22KGCT-ND
RHM120GCT-ND
RHM1.0KGCT-ND
RHM5.6KGCT-ND
RHM100KCRCT-ND
Rohm Semiconductor
Rohm Semiconductor
Rohm Semiconductor
Rohm Semiconductor
Rohm Semiconductor
RES 120 OHM 1/10W 5% 0603
SMD
RES 1.0K OHM 1/10W 5% 0603
SMD
RES 5.6K OHM 1/10W 5% 0603
5.6K
SMD
RES 100K OHM 1/8W 1% 0805
SMD
100K 1%
R4A, R4B, R4C
R5A, R6A, R37,
R50, R55, R56,
R57, R58
RES 47K OHM 1/10W 5% 0603
SMD
8
47K
RHM47KGCT-ND
Rohm Semiconductor
R6, R7, R14, R15,
R22,
RES 10 OHM 1/10W 5% 0603
SMD
RES 470K OHM 1/10W 5%
0603 SMD
R32A, R32B,
R32C, R38, R49
10
1
10R
RHM10GCT-ND
Rohm Semiconductor
Rohm Semiconductor
470K
R7A
R9A, R9B, R9C,
R20A,
RHM470KGCT-ND
RES 22 OHM 1/10W 5% 0603
6
1
22R
SMD
R20B, R20C
RHM22GCT-ND
Rohm Semiconductor
Rohm Semiconductor
Rohm Semiconductor
RES 2.2K OHM 1/10W 5% 0603
2.2K
SMD
RES 8.2K OHM 1/10W 5% 0603
SMD
R10
RHM2.2KGCT-ND
1
1
3
8.2K
NC
R11
R12
RHM8.2KGCT-ND
N/A
N/A
N/A
R12A, R12B, R12C
R14A, R14B, R18A,
R18B, R18C
R15A, R15B, R15C,
R17A, R17B,
R17C,R22A, R22B,
R22C, R28A, R29A,
R30A,R31A, R31B,
R31C, R51, R52,
RES 4.7 OHM 1/10W 5% 0603
SMD
5
4.7R
RHM4.7GCT-ND
Rohm Semiconductor
Rohm Semiconductor
RES 10K OHM 1/10W 5% 0603
SMD
25
10K
RHM10KGCT-ND
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Page 29 of 35
IRAUDAMP11 REV 1.0
R53, R54,R61, R62,
R104, R26A, R26B,
R26C
RES 3.9K OHM 1/10W 5% 0603
3
3
3
3.9K
1R
SMD
RES 1.0 OHM 1/8W 5% 0805
SMD
RES 10 OHM 1W 1% 2512
SMD
R16A, R16B, R16C
R19A, R19B, R19C
RHM3.9KGCT-ND
RHM1.0ARCT-ND
PT10AECT-ND
Rohm Semiconductor
Rohm Semiconductor
Panasonic - ECG
10R,1W
R21A, R21B, R21C
R23A, R23B, R25A,
R25B, R25C, R39,
R40
RES 100K OHM 1/10W 5%
0603 SMD
RES 2.2K OHM 1/8W 5% 0805
7
3
2
2
1
1
1
2
1
2
3
1
1
1
3
1
2
100k
2.2K
3.3K
15K
RHM100KGCT-ND
RHM2.2KARCT-ND
RHM3.3KGCT-ND
RHM15KGCT-ND
RHM5.1KARCT-ND
RHM5.1KGCT-ND
RHM120KGCT-ND
PT330XCT-ND
Rohm Semiconductor
Rohm Semiconductor
Rohm Semiconductor
Rohm Semiconductor
Rohm Semiconductor
Rohm Semiconductor
Rohm Semiconductor
Panasonic - ECG
SMD
R24A, R24B, R24C
R27A, R42
R30B, R30C
R31
RES 3.3K OHM 1/10W 5% 0603
SMD
RES 15K OHM 1/10W 5% 0603
SMD
RES 5.1K OHM 1/8W 5% 0805
SMD
RES 5.1K OHM 1/10W 5% 0603
SMD
RES 120K OHM 1/10W 5%
0603 SMD
RES 330 OHM 1W 5% 2512
SMD
RES 510 OHM 1W 5% 2512
SMD
RES 33K OHM 1/10W 5% 0603
SMD
THERMISTOR PTC 470 OHM
95C SMD
5.1k
5.1k
R36
120k
330R,1W
510R,1W
33k
R41
R43, R47
R44
PT510XCT-ND
Panasonic - ECG
R45, R46
RpA, RpB, RpC
VR1
RHM33KGCT-ND
490-2465-1-ND
Rohm Semiconductor
Murata Electronics
North America
Vishay/BC
95C
10K
TRIM POT ST-32TB 10 KOHMS
DIODE ZENER 24V 500MW
SOD-123
DIODE ZENER 15V 500MW
SOD-123
DIODE ZENER 39V 500MW
SOD-123
DIODE ZENER 18V 500MW
SOD-123
ST32ETB103CT-ND
BZT52C24-FDICT-ND
BZT52C15-FDICT-ND
BZT52C39-FDICT-ND
BZT52C18-FDICT-ND
MMSZ5V6T1GOSCT-ND
Components
24V
Z1
Diodes Inc
Diodes Inc
15V
Z2
39V
Z3, Z7, Z8
Z4
Diodes Inc
18V
Diodes Inc
DIODE ZENER 5.6V 500MW
SOD-123
5.6V
Z5, Z6
ON Semiconductor
Table 2 IRAUDAMP11 Mechanical Bill of Materials
Quantity
7
Value
Description
Designator
Digikey P/N
Vendor
Lock washer 1, Lock washer 2,
Lock washer 3, Lock washer 4,
Lock washer 5, Lock washer 6
Lock washer 7
WASHER LOCK INTERNAL
#4 SS
Building
Fasteners
Washer #4 SS
H729-ND
Print Circuit Board
IRAUDAM11 Rev 3.0 .PCB
1
7
PCB
PCB 1
Custom
Screw 1, Screw 2, Screw 3,
Screw 4, Screw 5, Screw 6,
Screw 7,
Screw 4-
40X5/16
SCREW MACHINE PHILLIPS
4-40X5/16
Building
Fasteners
H343-ND
Keystone
Electro-
nics
Therm-
alloy
STANDOFF HEX 4-
40THR .500"L ALUM
Stand Off 1, Stand Off 2, Stand
Off 3, Stand Off 4
4
Stand off 0.5"
AAVID 4880G
1893K-ND
THERMAL PAD .080" 4X4"
GAPPAD
1/16
thermal pad under heatsink
BER164-ND
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Page 30 of 35
IRAUDAMP11 REV 1.0
IRAUDAMP11 Hardware
Note:
IRAUDAMP11 Heat Spreader
All dimensions are in millimeters
Tolerances are ±0.1mm
Material:ALUMINUM
All thread holes are 4-40 X 8mm dip ,minimum
3
4.5
3
4.5
16
10.5
6
1.6
12
14
12
6
8
27
27
10
Fig 25 Heat Spreader
.
Screw
H343-ND
Screw
H343-ND
Thermal Pad
Lock washer
Lock washer
Screw
H343-ND
Screw
H343-ND
Stand Off 3
1893K-ND
Stand Off 2
1893K-ND
Lock washer
Lock washer
Lock washer
Screw
Lock washer
Screw
Screw
Lock washers
H729-ND
Stand Off 4
1893K-ND
Stand Off 1
1893K-ND
Screws
H343-ND
Fig 26 Hardware Assemblies
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Page 31 of 35
IRAUDAMP11 REV 1.0
IRAUDAMP11 PCB Specifications
PCB:
1. Two Layers SMT PCB with through holes
2. 1/16 thickness
3. 2/0 OZ Cu
4. FR4 material
5. 10 mil lines and spaces
6. Solder Mask to be Green enamel EMP110 DBG (CARAPACE) or Enthone Endplate
DSR-3241or equivalent.
7. Silk Screen to be white epoxy non conductive per IPC–RB 276 Standard.
8. All exposed copper must finished with TIN-LEAD Sn 60 or 63 for 100u inches thick.
9. Tolerance of PCB size shall be 0.010 –0.000 inches
10. Tolerance of all Holes is -.000 + 0.003”
11. PCB acceptance criteria as defined for class II PCB’S standards.
Gerber Files Apertures Description:
All Gerber files stored in the attached CD-ROM were generated from Protel Altium Designer
Altium Designer 6. Each file name extension means the following:
1. .gtl
2. .gbl
3. .gto
Top copper, top side
Bottom copper, bottom side
Top silk screen
4. .gbo Bottom silk screen
5. .gts Top Solder Mask
6. .gbs Bottom Solder Mask
7. .gko Keep Out,
8. .gm1 Mechanical1
9. .gd1 Drill Drawing
10. .gg1 Drill locations
11. .txt
CNC data
12. .apr
Apertures data
Additional files for assembly that may not be related with Gerber files:
13. .pcb PCB file
14. .bom Bill of materials
15. .cpl Components locations
16. .sch Schematic
17. .csv Pick and Place Components
18. .net Net List
19. .bak Back up files
20. .lib
PCB libraries
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Page 32 of 35
IRAUDAMP11 REV 1.0
Fig 27 IRAUDAMP11 PCB Top Overlay (Top View)
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Page 33 of 35
IRAUDAMP11 REV 1.0
Fig 28 IRAUDAMP11 PCB Bottom Layer (Top View)
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Page 34 of 35
IRAUDAMP11 REV 1.0
Revision changes descriptions
Revision
Rev 1.0
Changes description
Date
Oct, 08 2010
Released
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 01/29/2009
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Page 35 of 35
IRAUDAMP11 REV 1.0
相关型号：
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