IRC4BC40F [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRC4BC40F |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总8页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91454B
IRG4BC40F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCES =600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
VCE(on) typ. = 1.50V
G
@VGE = 15V, IC = 27A
E
• Industry standard TO-220AB package
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
49
IC @ TC = 100°C
27
A
ICM
200
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
200
VGE
20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
15
160
mJ
PD @ TC = 25°C
W
PD @ TC = 100°C
Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.77
–––
80
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.50
–––
2.0 (0.07)
–––
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1
4/17/2000
IRG4BC40F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
9.2
—
—
—
—
0.70
V/°C VGE = 0V, IC = 1.0mA
1.50 1.7
IC = 27A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
1.85
1.56
—
—
—
IC = 49A
V
See Fig.2, 5
IC = 27A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-12
12
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100V, IC = 27A
VGE = 0V, VCE = 600V
—
250
2.0
1000
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
—
IGES
Gate-to-Emitter Leakage Current
—
100 nA VGE = 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 150
Conditions
IC = 27A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Qge
Qgc
td(on)
tr
15
35
26
18
23
53
—
—
nC
VCC = 400V
VGE = 15V
See Fig. 8
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
FallTime
240 360
170 250
IC = 27A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
See Fig. 10, 11, 13, 14
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
0.37
1.81
—
—
mJ
ns
2.18 2.8
25
21
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 27A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
See Fig. 13, 14
td(off)
tf
Turn-Off Delay Time
FallTime
380
310
3.9
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
7.5
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
2200
140
29
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC40F
60
50
40
30
20
10
0
F or both :
Trian gu lar w a ve :
D uty cycle: 50%
I
T
T
= 125°C
J
=
90°C
sink
G ate drive as specified
C lam p voltage:
80 % o f ra ted
Po w er D issip ation
= 28 W
Sq u are wave:
60 % of rated
voltag e
I
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
1000
100
10
TJ = 25°C
100
TJ = 150°C
TJ = 150°C
TJ = 25°C
10
V C C = 50V
5µs PULSE WIDTH
VG E = 15V
20µs PULSE W IDTH
A
A
1
1
5
6
7
8
9
10
11
12
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4BC40F
50
40
30
20
10
0
2.5
2.0
1.5
1.0
V
= 15V
G E
VG E = 15V
80µs PULSE WIDTH
IC = 54A
IC = 27A
I C = 14A
A
25
50
75
100
125
150
-60
-40
-20
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
T
, Junction Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
t
2
(THERMAL RESPONSE)
0.02
0.01
N otes:
1 . D uty factor D
=
t
/ t
2
1
2. Pea k T = P
x Z
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4BC40F
20
16
12
8
4000
3000
2000
1000
0
VGE = 0V
f = 1 MHz
VC E = 400V
IC = 27A
Cies = Cge + Cgc + Cce
Cres = Cce
SHORTED
Coes = Cce + Cgc
C
ies
C
C
oes
res
4
A
120
A
0
0
20
40
60
80
100
1
10
100
Q
, Total Gate Charge (nC)
V
, Collector-to-Emitter Voltage (V)
g
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
2.60
2.50
2.40
2.30
2.20
2.10
10
V C C = 480V
V G E = 15V
T J = 25°C
I C = 27A
IC = 54A
IC = 27A
IC = 14A
1
R G = 10
Ω
V
V
= 15V
= 480V
G E
A
C C
A
0.1
0
10
20
30
40
50
60
-60
-40
-20
0
20
40
60
80
100 120 140 160
R
, Gate Resistance
(Ω)
T
, Junction Temperature (°C)
G
J
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRG4BC40F
10
1000
100
10
RG = 10
V
T
= 20V
= 125°C
Ω
G E
J
T J
= 150°C
V C C = 480V
V G E = 15V
8
6
4
2
0
SAFE OPE RA TING ARE A
A
1
0
10
20
30
40
50
60
1
10
100
1000
I
, Collector-to-Emitter Current (A)
V
, Collector-to-Emitter Voltage (V)
C E
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4BC40F
L
D.U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
D river*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
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7
IRG4BC40F
Case Outline and Dimensions TO-220AB
10.54 (.415)
3.78 (.149)
N O TE S :
- B -
2.87 (.113)
2.62 (.103)
10.29 (.405)
1
D IM E N S IO N S & T O LER A N C IN G
4.69 (.185)
4.20 (.165)
3.54 (.139)
P E R A N S I Y14.5M , 1982.
C O N T R O LLIN G D IM E N SIO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM ET E R S (IN C H E S ).
C O N F O R M S T O JE D E C O U TLIN E
TO -220A B .
1.32 (.052)
1.22 (.048)
- A -
2
3
6.47 (.255)
6.10 (.240)
4
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LE A D A S S IG N M E N T S
1 - G A TE
1
2
3
2 - C O LLE C TO R
3 - E M ITT E R
4 - C O LLE C TO R
3.96 (.160)
3.55 (.140)
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e n sio n s in M illim e te rs a n d (In ch e s)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8
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