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IRC630 [INFINEON]

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A); 功率MOSFET ( VDSS = 200V , RDS(ON) = 0.40ohm ,ID = 9.0A )
IRC630
型号: IRC630
厂家: Infineon    Infineon
描述:

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
功率MOSFET ( VDSS = 200V , RDS(ON) = 0.40ohm ,ID = 9.0A )

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总8页 (文件大小:233K)
中文:  中文翻译
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相关型号:

IRC630-002PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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IRC630-003PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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IRC630-007

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRC630-008

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRC630-008PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRC630-018PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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IRC630-019PBF

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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IRC630-031

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IRC630-031PBF

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IRC634-002PBF

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IRC634-007

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRC634-008

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IRC634-012PBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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IRC634-015PBF

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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IRC634-018

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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IRC634-019

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

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IRC634-031PBF

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