IRCZ24 [INFINEON]
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A); 功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.040ohm ，ID = 26A ）
| 型号： | IRCZ24 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A) |
| 文件： | 总6页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.615A
IRCZ24
HEXFET® Power MOSFET
l Dynamic dv/dt Rating
l Current Sense
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
VDSS = 55V
RDS(on) = 0.040Ω
ID = 26A
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
TO-220 HexSense
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
17
12
A
68
PD @TC = 25°C
Power Dissipation
60
W
W/°C
V
Linear Derating Factor
0.40
±20
6.0
4.5
VGS
EAS
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
A
dv/dt
TJ
-55 to + 175
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or screw
300 (1.6mm from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
—
Max.
—
Units
2.5
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
—
0.50
—
—
°C/W
—
62
**WhenmountedonFR-4boardusingminimumrecommendedfootprint.Forrecommendedfootprintandsolderingtechniquesrefertoapplicationnote#AN-994.
C-1
IRCZ24
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.10
2.0 ––– 4.0
5.8 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 24
––– ––– 6.3
––– ––– 9.0
––– 12 –––
––– 59 –––
––– 25 –––
––– 38 –––
Ω
V
S
VGS = 10V, ID = 10A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 10A
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 17A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
VDS = 48V
VGS = 10V, See Fig. 6 and 13
VDD = 30V
RiseTime
ID = 17A
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 18Ω
RD = 1.7Ω, See Fig. 10
Between lead,
6 mm (0.25 in.)
from package
and center of
LD
LC
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
nH
pF
die contact
Ciss
Coss
Crss
r
Input Capacitance
––– 720 –––
––– 360 –––
––– 75 –––
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Current Sensing Ratio
ƒ = 1.0MHz, See Fig. 5
740 ––– 820 ––– ID = 17A, VGS = 10V
Coss
Output Capacitance of Sensing Cells
––– 14 –––
pF
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFETsymbol
––– ––– 17
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 68
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.5
––– 87 180
––– 0.29 0.60
V
TJ = 25°C, IS = 17A, VGS = 0V
TJ = 25°C, IF = 17A
ns
nC
Qrr
ton
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 17A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
,
max. junction temperature. ( See fig. 11 )
TJ ≤ 175°C
VDD = 25V, starting TJ = 25°C, L = 0.024mH
RG = 25Ω, IAS = 17A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C-2
IRCZ24
VDS, Drain-to-Source Voltage (Volts)
VDS, Drain-to-Source Voltage (Volts)
Fig. 1Typical Output Characteristics,
TC=25°C
Fig. 2Typical Output Characteristics,
TC=175°C
VDS, Gate-to-Source Voltage (Volts)
TJ, Junction Temperature (°C)
Fig. 3TypicalTransfer Characteristics
Fig. 4 Normalized On-Resistance vs.
Temperature
C-3
IRCZ24
VDS, Drain-to-Source Voltage (Volts)
QG, Total Gate Charge (nC)
Fig. 5 Typical Capacitance vs. Drain-to-
Source Voltage
Fig. 6 Typical Gate Charge vs. Gate-to-
Source Voltage
VSD, Source-to-Drain Voltage (Volts)
VDS, Drain-to-Source Voltage (Volts)
Fig. 7Typical Source-Drain Diode
Forward Voltage
Fig. 8 Maximum Safe Operating Area
C-4
IRCZ24
TC, Case Temperature (°C)
Starting TJ, Junction Temperature (°C)
Fig. 9 Maximum Drain Current vs. Case
Temperature
Fig. 12c Maximum Avalanche Energy
vs. Drain Current
t1, Rectiangular Pulse Duration (seconds)
Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-5
IRCZ24
TJ, Junction Temperature (°C)
ID, Drain Current (Amps)
Fig. 15Typical HEXSense Ratio vs.
JunctionTemperature
Fig. 16Typical HEXSense Ratio vs.
Drain Current
Fig. 18 HEXSense Ratio Test Circuit
VGS, Gate-to-Source Voltage (Volts)
Fig. 17 Typical HEXSense Ratio vs. Gate
Voltage
Mechanical drawings, Appendix A
Part marking information, Appendix B
Test Circuit diagrams, Appendix C
Fig. 19 HEXSense Sensing Cell Output
Capacitance Test Circuit
C-6
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