关闭背景特效

IRF1010ESTRLPBF [INFINEON]

Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3;

IRF1010ESTRLPBF


元器件型号：	IRF1010ESTRLPBF
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 局域网开关脉冲晶体管
PDF文件：	总11页 (文件大小：227K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF1010ESTRLPBF参数

IRF1010ESTRR

Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

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0 IRF

IRF1010EZ

AUTOMOTIVE MOSFET

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237 IRF

IRF1010EZL

AUTOMOTIVE MOSFET

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71 IRF

IRF1010EZLPBF

AUTOMOTIVE MOSFET

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80 IRF

IRF1010EZPBF

AUTOMOTIVE MOSFET

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89 IRF

IRF1010EZPBF_15

Advanced Process Technology

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0 IRF

IRF1010EZS

AUTOMOTIVE MOSFET

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76 IRF

IRF1010EZSPBF

AUTOMOTIVE MOSFET

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69 IRF

IRF1010EZSTRLP

Advanced Process Technology

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1 IRF

IRF1010EZSTRLPBF

暂无描述

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0 IRF

IRF1010EZSTRR

Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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1 INFINEON

IRF1010EZSTRRPBF

Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 INFINEON

IRF1010N

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

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468 IRF

IRF1010NL

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)

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84 IRF

IRF1010NLPBF

HEXFET㈢ Power MOSFET

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43 IRF

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