IRF1302PBF [INFINEON]
AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0mヘ , ID = 180A ); 汽车MOSFET ( VDSS = 20V , RDS ( ON) = 4.0米ヘ, ID = 180A )型号: | IRF1302PBF |
厂家: | Infineon |
描述: | AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0mヘ , ID = 180A ) |
文件: | 总10页 (文件大小:162K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95499
AUTOMOTIVE MOSFET
IRF1302PbF
HEXFET® Power MOSFET
Benefits
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D
VDSS = 20V
RDS(on) = 4.0mΩ
G
ID = 180A
S
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFET utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
180
130
700
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TC = 25°C
PowerDissipation
230
W
W/°C
V
LinearDeratingFactor
1.5
VGS
EAS
IAR
Gate-to-SourceVoltage
± 20
350
Single Pulse Avalanche Energy
Avalanche Current
mJ
See Fig.12a, 12b, 15, 16
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
TBD
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.65
–––
62
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
Junction-to-Ambient (PCB mount)
www.irf.com
1
06/29/04
IRF1302PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
59
3.3
4.0
mΩ VGS = 10V, ID = 104A
––– 4.0
––– –––
V
VDS = 10V, ID = 250µA
VDS = 15V, ID = 104A
VDS = 20V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
S
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
–––
–––
–––
–––
79 120
ID = 104A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
18
31
27
46
nC VDS = 16V
VGS = 10V
VDD = 11V
28 –––
––– 130 –––
ID = 104A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
47 –––
16 –––
RG = 4.5Ω
VGS = 10V
D
Between lead,
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
6mm (0.25in.)
nH
G
from package
7.5
and center of die contact
S
Ciss
Input Capacitance
––– 3600 –––
––– 2370 –––
––– 520 –––
––– 5710 –––
––– 2370 –––
––– 3540 –––
VGS = 0V
Coss
Output Capacitance
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 16V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 16V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
––– –––
180
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 700
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 66 100
––– 130 200
V
TJ = 25°C, IS = 104A, VGS = 0V
ns
TJ = 25°C, IF = 104A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF1302PbF
10000
1000
100
10
10000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000.00
174A
=
I
D
1.5
1.0
0.5
0.0
T = 175°C
J
100.00
T = 25°C
J
V
= 15V
DS
20µs PULSE WIDTH
V
= 10V
GS
10.00
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4.0
5.0
6.0 7.0
T , Junction Temperature
(
C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF1302PbF
12
10
7
100000
D
I
= 104A
V
= 0V,
f = 1 MHZ
V
= 16V
GS
DS
C
= C + C
,
C
SHORTED
iss
gs gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
Ciss
Coss
5
Crss
10
2
0
0
20
40
60
80
100
1
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 175
J
C
100
1000
100
10
100µsec
1msec
10
°
T = 25
C
J
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0 V
GS
0.1
1
0.2
0.7
1.2
1.7
2.2
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF1302PbF
200
150
100
50
RD
VDS
LIMITED BY PACKAGE
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
TC, Case Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF1302PbF
700
560
420
280
140
0
15V
I
D
TOP
43A
74A
BOTTOM
104A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
°
( C)
150
175
Starting Tj, Junction Temperature
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
V
G
3.0
2.0
1.0
Charge
I
= 250µA
D
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
3mA
T
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRF1302PbF
1000
100
10
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
∆
0.05
0.10
avalanche losses
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
410
360
310
260
210
160
110
60
TOP
BOTTOM 10% Duty Cycle
= 104A
Single Pulse
I
D
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
10
25
50
75
100
125
150
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
Fig 16. Maximum Avalanche Energy
EAS (AR) = PD (ave)·tav
Vs. Temperature
www.irf.com
7
IRF1302PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 17. For N-channel HEXFET® power MOSFETs
8
www.irf.com
IRF1302PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
- A -
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INT ERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
AS S E MB L Y
LOT CODE
LINE C
Notes:
ꢀ Coss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.063mH
RG = 25Ω, IAS = 104A. (See Figure 12).
ISD ≤ 104A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-
4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
TO-220 package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04
www.irf.com
9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号:
IRF1302SHR
Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
INFINEON
IRF1302SPBF
Power Field-Effect Transistor, 174A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRF130E
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
INFINEON
IRF130EB
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
INFINEON
IRF130EC
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
INFINEON
IRF130EDPBF
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON
©2020 ICPDF网 联系我们和版权申明