IRF1312L [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF1312L |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总11页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 94504
IRF1312
IRF1312S
IRF1312L
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Motor Control
VDSS
80V
RDS(on) max
ID
95A
10mΩ
l Uninterrutible Power Supplies
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D2Pak
IRF1312S
TO-262
IRF1312L
TO-220AB
IRF1312
Absolute Maximum Ratings
Parameter
Max.
95
Units
A
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
67
380
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
3.8
W
Power Dissipation
210
Linear Derating Factor
1.4
W/°C
V
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 20
Peak Diode Recovery dv/dt
Operating Junction and
5.1
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
0.73
–––
62
Units
RθJC
RθCS
RθJA
RθJA
–––
0.50
–––
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
°C/W
40
Notes through are on page 11
www.irf.com
1
7/01/02
IRF1312/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
0.078 ––– V/°C Reference to 25°C, ID = 1mA
6.6 10 mΩ VGS = 10V, ID = 57A
––– 5.5
V(BR)DSS
Drain-to-Source Breakdown Voltage
80
–––
–––
3.5
––– –––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
VDS = VGS, ID = 250µA
VDS = 76V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 150°C
VGS = 20V
––– ––– 1.0
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 57A
ID = 57A
gfs
92
––– –––
93 140
36 –––
34 –––
25 –––
S
Qg
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 40V
VGS = 10V,
VDD = 40V
––– 130 –––
ID = 57A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
47 –––
51 –––
RG = 4.5Ω
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 5450 –––
––– 550 –––
––– 340 –––
––– 1910 –––
––– 380 –––
––– 620 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V ꢀ
C
oss eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
–––
Max.
250
57
Units
mJ
EAS
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
21
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
––– –––
––– –––
95
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
380
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 64 96
––– 150 230
V
TJ = 25°C, IS = 57A, VGS = 0V
ns
TJ = 25°C, IF = 57A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF1312/S/L
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
10V
8.0V
7.0V
6.0V
5.5V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
BOTTOM 5.0V
1
5.0V
0.1
0.01
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 25°C
5.0V
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
100.00
10.00
1.00
2.5
I
= 95A
D
T
= 175°C
V
= 10V
J
GS
2.0
1.5
1.0
0.5
T
= 25°C
J
0.10
V
= 25V
DS
20µs PULSE WIDTH
0.01
5
6
7
8
9
10
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF1312/S/L
20
16
12
8
100000
I = 57A
V
= 0V,
f = 1 MHZ
GS
D
V
= 64V
DS
C
= C
+
C
,
C
ds
iss
SHORTED
gs
gd
VDS= 40V
VDS= 16V
C
= C
gd
rss
C
= C + C
oss
ds gd
10000
1000
100
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100.0
10.0
1.0
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
10msec
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF1312/S/L
100
80
60
40
20
0
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
SINGLE PULSE
1
0.02
0.01
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF1312/S/L
500
400
300
200
100
0
15V
I
D
TOP
23A
40A
57A
DRIVER
+
L
BOTTOM
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF1312/S/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRF1312/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF10
10
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
1789
ASSEM
BLED ON WW 19, 1997
HE ASSEMBLY LINE "C"
IN T
DATE CODE
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WEEK 19
LINE C
8
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IRF1312/S/L
D2Pak Package Outline
D2Pak Part Marking Information
THIS IS AN IRF5
LOT CO
30S WITH
DE 8024
EMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
PART NUMBER
INTE
RNATIONAL
RECTIFIER
LOGO
ASS
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
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9
IRF1312/S/L
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-262 Part Marking Information
EXA
MPLE:
THIS
IS AN IRL3103L
LOT CODE 178
PART NUMBER
9
INTERNATIONAL
RECTIFI
ASSEMBLED ON WW 19, 1
997
ER
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMB
LOT CODE
LY
L
INE C
10
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IRF1312/S/L
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
26.40 (1.039)
24.40 (.961)
4
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 0.15mH
R
G = 25Ω, IAS = 57A. (See Figure 12)
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
This is only applied to TO-220AB package
ISD ≤ 57A, di/dt ≤ 410A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
TO-220AB package is not recommended for Surface Mount Application
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.7/02
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11
相关型号：
IRF1312STRLPBF
Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRF1312STRRPBF
Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
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