IRF1405ZPBF [INFINEON]
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 75A ); 汽车MOSFET ( VDSS = 55V , RDS ( ON) = 4.9米ヘ, ID = 75A )型号: | IRF1405ZPBF |
厂家: | Infineon |
描述: | AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 75A ) |
文件: | 总13页 (文件大小:809K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97018
IRF1405ZPbF
IRF1405ZSPbF
AUTOMOTIVE MOSFET
IRF1405ZLPbF
Features
HEXFET® Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D
VDSS = 55V
RDS(on) = 4.9mΩ
G
ID = 75A
Description
S
SpecificallydesignedforAutomotiveapplications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
binetomakethisdesignanextremelyefficientand
reliable device for use in Automotive applications
and a wide variety of other applications.
D2Pak
TO-262
TO-220AB
IRF1405ZPbF
IRF1405ZSPbF IRF1405ZLPbF
Absolute Maximum Ratings
Parameter
Max.
150
110
75
Units
I
I
I
I
@ T = 25°C
C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
D
D
D
@ T = 100°C
C
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
@ T = 25°C
C
600
230
DM
P
@T = 25°C
Power Dissipation
C
W
D
Linear Derating Factor
1.5
± 20
W/°C
V
V
Gate-to-Source Voltage
GS
EAS (Thermally limited)
270
420
mJ
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (Tested )
IAR
See Fig.12a, 12b, 15, 16
A
EAR
mJ
Repetitive Avalanche Energy
Operating Junction and
T
J
-55 to + 175
T
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
STG
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.65
–––
62
Units
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
07/22/05
IRF1405Z/S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
3.7
–––
–––
–––
–––
–––
4.9
4.0
–––
20
VGS = 10V, ID = 75A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 75A
VGS(th)
V
S
gfs
Forward Transconductance
88
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA VDS = 55V, VGS = 0V
250
200
V
DS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA VGS = 20V
––– -200
V
GS = -20V
ID = 75A
DS = 44V
Qg
Qgs
Qgd
td(on)
tr
120
31
180
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
V
46
VGS = 10V
VDD = 25V
ID = 75A
18
Rise Time
110
48
td(off)
tf
Turn-Off Delay Time
ns RG = 4.4Ω
Fall Time
82
VGS = 10V
LD
Internal Drain Inductance
4.5
Between lead,
D
S
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 44V, ƒ = 1.0MHz
Ciss
Input Capacitance
––– 4780 –––
Coss
Output Capacitance
–––
–––
770
410
–––
–––
V
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
––– 2730 –––
Coss
Output Capacitance
–––
–––
600
910
–––
–––
V
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
I
Continuous Source Current
–––
–––
75
S
(Body Diode)
A
showing the
integral reverse
G
I
Pulsed Source Current
–––
–––
600
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
30
1.3
46
45
V
T = 25°C, I = 75A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 75A, VDD = 25V
J F
rr
di/dt = 100A/µs
Q
t
30
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.10mH
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population.
100% tested to this value in production.
RG = 25Ω, IAS = 75A, VGS =10V. Part not
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS
.
2
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IRF1405Z/S/LPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
200
175
150
T
= 150°C
J
T
= 25°C
J
125
100
75
50
25
0
T
= 175°C
J
T
= 25°C
J
V
= 25V
DS
20µs PULSE WIDTH
1
4
6
8
10
12
0
25 50 75 100 125 150 175 200
V
, Gate-to-Source Voltage (V)
I ,Drain-to-Source Current (A)
D
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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3
IRF1405Z/S/LPbF
100000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 75A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
V
V
= 44V
= 28V
rss
oss
gd
= C + C
DS
DS
ds
gd
10000
1000
100
C
iss
6.0
C
4.0
oss
C
rss
2.0
0.0
1
10
100
0
20
40
60
80
100
120
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000.00
100.00
10.00
1.00
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
1msec
V
= 0V
Single Pulse
GS
10msec
0.10
1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF1405Z/S/LPbF
150
125
100
75
2.5
2.0
1.5
1.0
0.5
I
= 75A
D
V
= 10V
Limited By Package
GS
50
25
0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Case Temperature (°C)
, Junction Temperature (°C)
C
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF1405Z/S/LPbF
15V
500
400
300
200
100
0
I
D
TOP
31A
53A
DRIVER
L
V
DS
BOTTOM 75A
D.U.T
AS
R
G
+
-
V
DD
I
A
V
20V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
G
Charge
I
= 250µA
D
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175 200
V
GS
T
, Temperature ( °C )
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRF1405Z/S/LPbF
10000
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
∆
assuming
Tj = 25°C due to
avalanche losses
0.01
0.05
0.10
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
300
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 75A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
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7
IRF1405Z/S/LPbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRF1405Z/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: "P" in assembly line
position indicates "Lead-Free"
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9
IRF1405Z/S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
25
10
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IRF1405Z/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
OR
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11
IRF1405Z/S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/05
12
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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