IRF1503STRLPBF [INFINEON]
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3;
| 型号： | IRF1503STRLPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 晶体 晶体管 开关 脉冲 局域网 |
| 文件： | 总9页 (文件大小：552K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94526A
AUTOMOTIVE MOSFET
IRF1503
HEXFET® Power MOSFET
Typical Applications
●
14V Automotive Electrical Systems
14V Electronic Power Steering
D
●
VDSS = 30V
Features
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 3.3mΩ
G
ID = 75A
S
Description
Specifically designed for Automotive applications, this
design of HEXFET® Power MOSFETs utilizes the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
HEXFET power MOSFET are a 175°C junction operating
temperature,fastswitchingspeedandimprovedrepetitive
avalanche rating. These combine to make this design an
extremelyefficientandreliabledeviceforuseinAutomotive
applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
240
170
75
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current
A
960
330
2.2
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
VGS
Gate-to-Source Voltage
20
EAS
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
510
980
mJ
EAS (tested)
IAR
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energyꢀ
Operating Junction and
mJ
TJ
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
RθJC
RθCS
RθJA
°C/W
www.irf.com
1
12/11/02
IRF1503
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
75
2.6 3.3
––– 4.0
––– –––
mΩ VGS = 10V, ID = 140A
V
S
VDS = 10V, ID = 250µA
VDS = 25V, ID = 140A
Forward Transconductance
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 130 200
VDS = 30V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 30V, VGS = 0V, TJ = 125°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 140A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
36
41
54
62
nC VDS = 24V
VGS = 10V
17 –––
VDD = 15V
––– 130 –––
ID = 140A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
59 –––
48 –––
RG = 2.5Ω
VGS = 10V
D
S
Between lead,
5.0
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
6mm (0.25in.)
nH
G
from package
13
and center of die contact
Ciss
Input Capacitance
––– 5730 –––
––– 2250 –––
––– 290 –––
––– 7580 –––
––– 2290 –––
––– 3420 –––
VGS = 0V
Coss
Output Capacitance
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 24V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
240
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 960
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 71 110
––– 110 170
V
TJ = 25°C, IS = 140A, VGS = 0V
TJ = 25°C, IF = 140A, VDD = 15V
di/dt = 100A/µs
ns
nC
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.049mH
RG = 25Ω, IAS = 140A. (See Figure 12).
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
.
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
2
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IRF1503
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
BOTTOM4.5V
4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
200
T
= 25°C
T
= 175°C
J
J
T
= 175°C
160
120
80
J
T
= 25°C
J
100
40
V
= 25V
V
= 25V
DS
20µs PULSE WIDTH
DS
20µs PULSE WIDTH
10
0
4.0
5.0
V
6.0
7.0
8.0
9.0
10.0
0
40
80
120
160
200
, Gate-to-Source Voltage (V)
I
D,
Drain-to-Source Current (A)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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3
IRF1503
10000
8000
6000
4000
2000
20
16
12
8
V
C
= 0V,
= C
f = 1 MHZ
+ C C
GS
I = 140A
D
,
V
= 24V
iss
gs
gd
ds
DS
SHORTED
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
Coss
4
Crss
10
0
0
1
0
40
Q
80
120
160
200
100
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
1000
100
10
100.0
10.0
1.0
T
= 175°C
J
100µsec
1msec
T
= 25°C
10msec
J
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1
0.1
1
10
100
0.0
0.4
0.8
1.2
1.6
2.0
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF1503
2.0
1.5
1.0
0.5
0.0
240
200
160
120
80
240A
=
I
D
LIMITED BY PACKAGE
40
V
= 10V
GS
0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
25
50
75
100
125
150
175
T , Junction Temperature
( C)
°
( C)
T
, Case Temperature
J
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF1503
1000
800
600
400
200
0
I
15V
D
TOP
59A
100A
140A
BOTTOM
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
( C)
Starting T , Junction Temperature
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
I
= 250µA
D
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
3mA
T
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRF1503
10000
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
∆
0.01
0.05
0.10
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
600
500
400
300
200
100
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 50% Duty Cycle
= 140A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
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7
IRF1503
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRF1503
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
LOT CODE 9B1M
IRF1010
9246
9B 1M
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW = WEEK
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/02
www.irf.com
9
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