IRF2204L [INFINEON]
AUTOMOTIVE MOSFET; 汽车MOSFET
| 型号： | IRF2204L |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE MOSFET |
| 文件： | 总11页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94502
AUTOMOTIVE MOSFET
IRF2204S
IRF2204L
Typical Applications
HEXFET® Power MOSFET
●
Electric Power Steering
●
14 Volts Automotive Electrical Systems
D
VDSS = 40V
Features
●
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
R
DS(on) = 3.6mΩ
G
ID = 170A
S
Repetitive Avalanche Allowed up to Tjmax
Description
SpecificallydesignedforAutomotiveapplications,thisHEXFET®
Power MOSFET utilizes the lastest processing techniques to
achieveextremelylow on-resistancepersiliconarea. Additional
featurestothisdesignarea175°Cjunctionoperatingtemperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications
and a wide variety of other applications.
D2Pak
IRF2204S
TO-262
IRF2204L
Absolute Maximum Ratings
Parameter
Max.
170
120
850
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TC = 25°C
Power Dissipation
200
W
W/°C
V
Linear Derating Factor
1.3
VGS
EAS
IAR
Gate-to-Source Voltage
± 20
460
Single Pulse Avalanche Energy
Avalanche Current
mJ
See Fig.12a, 12b, 15, 16
A
EAR
TJ
Repetitive Avalanche Energy
Operating Junction and
mJ
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.75
Units
RθJC
RθJA
°C/W
Junction-to-Ambient
–––
40
www.irf.com
1
07/01/02
IRF2204S/IRF2204L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
3.0 3.6
––– 4.0
mΩ VGS = 10V, ID = 130A
V
S
VDS = 10V, ID = 250µA
VDS = 10V, ID = 130A
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
120 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 130 200
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 130A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
35
39
52
59
nC VDS = 32V
VGS = 10V
VDD = 20V
15 –––
––– 140 –––
––– 62 –––
––– 110 –––
ID = 130A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.5Ω
VGS = 10V
D
Between lead,
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
6mm (0.25in.)
nH
G
from package
7.5
and center of die contact
S
Ciss
Input Capacitance
––– 5890 –––
––– 1570 –––
––– 130 –––
––– 8000 –––
––– 1370 –––
––– 2380 –––
VGS = 0V
Coss
Output Capacitance
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
Coss
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
––– –––
170
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 850
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 68 100
––– 120 180
V
TJ = 25°C, IS = 130A, VGS = 0V
ns
TJ = 25°C, IF = 130A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF2204S/IRF2204L
10000
1000
100
10
10000
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
10
BOTTOM
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T
= 25
C
J
T
= 175
C
J
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
100.00
10.00
2.5
210A
=
I
D
T
= 175°C
J
2.0
1.5
1.0
0.5
0.0
T
= 25°C
J
V
= 25V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
°
4.0
5.0
V
6.0
7.0
8.0
9.0
10.0
T , Junction Temperature
(
C)
J
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF2204S/IRF2204L
100000
12
10
8
I
V
= 0V,
f = 1 MHZ
= 130A
D
GS
V
V
=
=
32V
20V
C
= C + C
,
C
SHORTED
DS
DS
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
Ciss
Coss
6
Crss
4
2
10
0
0
30
Q
60
90
120
150
1
10
, Drain-to-Source Voltage (V)
100
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
C
T
= 175
J
100
10
100µsec
1msec
°
C
T
= 25
J
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0 V
GS
2.0
1
0.1
0.0
0.5
1.0
1.5
2.5
1
10
, Drain-toSource Voltage (V)
100
V
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF2204S/IRF2204L
175
150
125
100
75
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
50
V
DS
25
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.1
0.10
0.05
t
1
t
2
0.02
Notes:
SINGLE PULSE
0.01
(THERMAL RESPONSE)
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF2204S/IRF2204L
900
750
600
450
300
150
0
1 5V
I
D
TOP
52A
91A
BOTTOM
130A
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
D D
-
I
A
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
°
( C)
150
175
Starting Tj, Junction Temperature
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
4.0
Q
Q
GD
GS
3.5
3.0
2.5
2.0
1.5
1.0
V
G
I
= 250µA
D
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
V
GS
T
3mA
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRF2204S/IRF2204L
1000
100
10
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
∆
avalanche losses
0.05
0.10
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
500
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 210A
Single Pulse
I
400
300
200
100
0
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC
Iav = 2∆T/ [1.3·BV·Zth]
Fig 16. Maximum Avalanche Energy
EAS (AR) = PD (ave)·tav
Vs. Temperature
www.irf.com
7
IRF2204S/IRF2204L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T*
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 17. For N-channel HEXFET® power MOSFETs
8
www.irf.com
IRF2204S/IRF2204L
D2Pak Package Outline
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW 02,
RECTIFIER
LOGO
2000
F530S
IN THE ASSEMBLY LINE "
L"
DAT E CODE
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
www.irf.com
9
IRF2204S/IRF2204L
TO-262 Package Outline
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLYLINE "C"
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
10
www.irf.com
IRF2204S/IRF2204L
D2Pak Tape & Reel Information
TR R
1 .60 (.0 63)
1 .50 (.0 59)
1.60 (.063)
4.10 (.161)
3.90 (.153)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEE D D IREC TIO N
TR L
11.60 (.457)
11.40 (.449)
1 .85 (.0 73)
1 .65 (.0 65)
24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
1.75 (.069)
10.90 (.429)
10.70 (.421)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED D IRE CTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
M IN.
30.40 (1.197)
M AX.
NO TES
1. CO MFORM S TO EIA-418.
2. CO NTROLLING DIM ENSIO N: M ILLIM ETER.
3. DIM ENSION M EASURED
:
26.40 (1.039)
24.40 (.961)
4
@ HUB.
3
4. INCLUDES FLANGE DISTORTION
@
O UTER EDGE.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.06mH
RG = 25Ω, IAS = 130A. (See Figure 12).
ISD ≤ 130A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
ꢀCoss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/02
www.irf.com
11
相关型号：
IRF2204PBF
Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
INFINEON
IRF220E
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
INFINEON
IRF220EA
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
INFINEON
IRF220EB
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON
IRF220EC
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON
IRF220ECPBF
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON
©2020 ICPDF网 联系我们和版权申明