IRF220ED [INFINEON]
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,;型号: | IRF220ED |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, |
文件: | 总11页 (文件大小:325K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRF220EDPBF
Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON
IRF220PBF
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON
IRF222R
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
RENESAS
©2020 ICPDF网 联系我们和版权申明