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IRF250P224 [INFINEON]

Power Field-Effect Transistor, 96A I(D), 250V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,;

IRF250P224


元器件型号：	IRF250P224
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Power Field-Effect Transistor, 96A I(D), 250V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, 局域网开关脉冲晶体管
PDF文件：	总17页 (文件大小：1045K)
下载文档：	下载PDF数据表文档文件
型号参数：IRF250P224参数

IRF250R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-204AE

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478 ETC

IRF250SM

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 22A I(D) | LLCC

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155 ETC

IRF250SMD

N.CHANNEL POWER MOSFET

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112 SEME-LAB

IRF251

N-CHANNEL POWER MOSFETS

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114 SAMSUNG

IRF251

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

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32 IXYS

IRF251

Power Field-Effect Transistor, 30A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204,

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0 VISHAY

IRF251R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 30A I(D) | TO-204AE

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37 ETC

IRF252

N-CHANNEL POWER MOSFETS

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103 SAMSUNG

IRF252

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

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33 IXYS

IRF2525

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-220AB

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56 ETC

IRF252R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-204AE

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20 ETC

IRF253

N-CHANNEL POWER MOSFETS

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104 SAMSUNG

IRF253

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

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26 IXYS

IRF253

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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1 VISHAY

IRF253R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 25A I(D) | TO-204AE

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13 ETC

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