IRF2807Z [INFINEON]
Advanced Process Technology; 先进的工艺技术
| 型号： | IRF2807Z |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology |
| 文件： | 总12页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94659A
IRF2807Z
AUTOMOTIVE MOSFET
IRF2807ZS
Features
IRF2807ZL
O
O
O
O
O
O
Advanced Process Technology
HEXFET® Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
D
VDSS = 75V
Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 9.4mΩ
G
Description
ID = 75A
SpecificallydesignedforAutomotiveapplications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
turesofthisdesign area175°Cjunctionoperating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
S
D2Pak
TO-262
IRF2807ZL
TO-220AB
IRF2807Z
IRF2807ZS
Absolute Maximum Ratings
Parameter
Max.
89
Units
A
I
I
I
I
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
D
D
D
63
75
(Package Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
350
170
DM
P
@TC = 25°C
Maximum Power Dissipation
W
D
Linear Derating Factor
Gate-to-Source Voltage
1.1
W/°C
V
V
± 20
GS
EAS
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
160
200
mJ
E
AS (tested)
Avalanche Current
IAR
EAR
See Fig.12a,12b,15,16
A
Repetitive Avalanche Energy
mJ
°C
T
J
Operating Junction and
-55 to + 175
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.90
–––
62
Units
Rθ
Rθ
Rθ
Rθ
Junction-to-Case
°C/W
JC
CS
JA
JA
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
09/03/03
IRF2807Z/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
75 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– 0.073 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
7.5
–––
–––
–––
–––
–––
–––
71
9.4
4.0
V
GS = 10V, ID = 53A
Ω
m
VGS(th)
V
VDS = VGS, ID = 250µA
gfs
IDSS
Forward Transconductance
67
–––
20
S
V
V
V
V
V
DS = 25V, ID = 53A
DS = 75V, VGS = 0V
DS = 75V, VGS = 0V, TJ = 125°C
GS = 20V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
250
200
-200
110
29
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
nC
GS = -20V
Qg
Qgs
Qgd
td(on)
tr
ID = 53A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
19
VDS = 60V
28
42
V
GS = 10V
DD = 38V
18
–––
–––
–––
–––
–––
ns
V
Rise Time
79
I
D = 53A
G = 6.2Ω
VGS = 10V
td(off)
tf
Turn-Off Delay Time
40
R
Fall Time
45
LD
Internal Drain Inductance
4.5
nH Between lead,
D
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
S
and center of die contact
pF VGS = 0V
DS = 25V
ƒ = 1.0MHz, See Fig. 5
Ciss
Input Capacitance
––– 3270 –––
Coss
Output Capacitance
–––
–––
420
240
–––
–––
V
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
––– 1590 –––
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 60V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
–––
280
440
–––
–––
V
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
Continuous Source Current
–––
–––
89
MOSFET symbol
(Body Diode)
Pulsed Source Current
A
V
showing the
integral reverse
ISM
G
–––
–––
350
S
(Body Diode)
p-n junction diode.
VSD
T = 25°C, I = 53A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
1.3
trr
Qrr
T = 25°C, I = 53A, VDD = 25V
J F
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
46
80
69
120
ns
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.12mH,
RG = 25Ω, IAS = 53A, VGS =10V. Part not
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
recommended for use above this value.
This value determined from sample failure population. 100%
ISD ≤ 53A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
,
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2
www.irf.com
IRF2807Z/S/L
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
1
4.5V
4.5V
0.1
0.01
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
150
125
T
= 175°C
J
T
= 25°C
J
100
75
50
25
0
T
= 175°C
J
T
= 25°C
J
1
V
= 25V
DS
20µs PULSE WIDTH
0.1
4
6
8
10
12
0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
I ,Drain-to-Source Current (A)
D
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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3
IRF2807Z/S/L
12.0
10.0
8.0
100000
V
= 0V,
= C
f = 1 MHZ
GS
I = 53A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
V
= 60V
= 38V
= 15V
= C
DS
DS
DS
rss
oss
gd
= C + C
ds
gd
10000
1000
100
C
iss
C
C
6.0
oss
rss
4.0
2.0
0.0
10
1
10
100
0
10 20 30 40 50 60 70 80
Total Gate Charge (nC)
Q
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T = 175°C
J
100µsec
T
= 25°C
J
1
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0V
GS
0
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage (V)
1
10
100
1000
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF2807Z/S/L
100
90
80
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
I
= 53A
D
Limited By Package
V
= 10V
GS
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Case Temperature (°C)
, Junction Temperature (°C)
C
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs. Temperature
Case Temperature
10
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF2807Z/S/L
15V
300
250
200
150
100
50
I
D
TOP
22A
38A
DRIVER
+
L
V
DS
BOTTOM 53A
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
5.0
4.0
3.0
2.0
1.0
V
G
Charge
I
= 250µA
D
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175 200
V
GS
T , Temperature ( °C )
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRF2807Z/S/L
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
0.01
avalanche losses
0.05
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 53A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
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7
IRF2807Z/S/L
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
+
-
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRF2807Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
3X
3X
0.46 (.018)
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
PART NUMBER
LOT CODE 9B1M
IRF1010
9246
LOGO
9B 1M
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW = WEEK
www.irf.com
9
IRF2807Z/S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEE K 02
AS S E MBL Y
LOT CODE
LINE L
10
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IRF2807Z/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXA
MPLE:
THIS
IS AN IRL3103L
LOT CODE 178
PART NUMBER
9
INTERNATIONAL
RECTIFI
ASSEMBLED ON WW19, 1
997
IN THE ASSEMBLY LINE "C"
ER
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMB
LY
LOT CODE
L
INE C
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11
IRF2807Z/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/03
12
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