IRF2907ZS-7PPBF_15 [INFINEON]
Advanced Process Technology;型号: | IRF2907ZS-7PPBF_15 |
厂家: | Infineon |
描述: | Advanced Process Technology |
文件: | 总10页 (文件大小:300K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97031D
IRF2907ZS-7PPbF
Features
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
D
VDSS = 75V
Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 3.8mΩ
G
Description
S
ID = 160A
This HEXFET® Power MOSFET utilizes the latest
processing techniques and advanced packaging
technology to achieve extremely low on-resistance
andworld-classcurrentratings. Additionalfeatures
of this design are a 175°C junction operating tem-
perature, fastswitchingspeedandimprovedrepeti-
tive avalanche rating . These features combine to
make this design an extremely efficient and reliable
device for use in Server & Telecom OR'ing and low
voltage Motor Drive Applications.
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
Absolute Maximum Ratings
Parameter
Max.
180
120
160
700
300
Units
A
I
I
I
I
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
D
D
D
Continuous Drain Current, VGS @ 10V (See Fig. 9)
(Package Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
DM
P
@TC = 25°C
W
Maximum Power Dissipation
Linear Derating Factor
D
2.0
± 20
W/°C
V
V
Gate-to-Source Voltage
GS
EAS
160
410
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS (tested)
IAR
EAR
See Fig.12a,12b,15,16
A
mJ
°C
Repetitive Avalanche Energy
T
J
-55 to + 175
Operating Junction and
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.50
–––
62
Units
°C/W
RθJC
Junction-to-Case
RθCS
RθJA
RθJA
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
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1
07/23/10
IRF2907ZS-7PPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
75 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆Β
V
∆
VDSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.066 ––– V/°C Reference to 25°C, ID = 1mA
R
DS(on) SMD
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
V
GS = 10V, ID = 110A
DS = VGS, ID = 250µA
3.0
–––
–––
–––
–––
–––
–––
170
55
3.8
4.0
mΩ
V
VGS(th)
V
gfs
IDSS
94
–––
20
S
VDS = 25V, ID = 110A
Forward Transconductance
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
nA
V
V
V
V
DS = 75V, VGS = 0V
DS = 75V, VGS = 0V, TJ = 125°C
GS = 20V
250
200
-200
260
–––
–––
–––
–––
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
GS = -20V
Qg
Qgs
Qgd
td(on)
tr
nC ID = 110A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
V
DS = 60V
GS = 10V
66
V
21
ns VDD = 38V
ID = 110A
Rise Time
90
td(off)
tf
Turn-Off Delay Time
92
RG = 2.6Ω
VGS = 10V
Fall Time
44
D
S
LD
Internal Drain Inductance
4.5
nH Between lead,
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
Ciss
Input Capacitance
––– 7580 –––
pF
Coss
Output Capacitance
–––
–––
970
540
–––
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
Coss
––– 3750 –––
––– 650 –––
––– 1110 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
–––
–––
160
MOSFET symbol
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
ISM
–––
–––
700
S
(Body Diode)
p-n junction diode.
VSD
T = 25°C, I = 110A, V = 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
1.3
V
J
S
GS
trr
Qrr
T = 25°C, I = 110A, VDD = 38V
–––
–––
35
40
53
60
ns
nC
J
F
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.026mH, RG = 25Ω, IAS = 110A, VGS =10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
R is measured at TJ of approximately 90°C.
θ
VDSS
.
2
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IRF2907ZS-7PPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 175°C
Tj = 25°C
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
150
100
50
1000
T
= 25°C
J
100
10
1
T
= 175°C
J
T
= 25°C
J
T
= 175°C
J
V
= 10V
DS
380µs PULSE WIDTH
V
= 25V
DS
≤
60µs PULSE WIDTH
0
0.1
0
25
50
75
100
125
150
1
2
3
4
5
6
7
8
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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3
IRF2907ZS-7PPbF
100000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 110A
D
C
C
C
+ C , C
SHORTED
V
V
V
= 60V
= 38V
= 15V
iss
gs
gd
ds
DS
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
10000
1000
100
C
iss
6.0
C
oss
4.0
C
rss
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
50
100
150
200
V
Q
G
Total Gate Charge (nC)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
1msec
100µsec
10msec
T
= 25°C
J
LIMITED BY PACKAGE
1
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
1.2
GS
0.1
0.1
0.1
1.0
10.0
100.0
0.0
0.2
V
0.4
0.6
0.8
1.0
1.4
V
, Drain-toSource Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF2907ZS-7PPbF
200
160
120
80
3.0
2.5
2.0
1.5
1.0
0.5
I
= 180A
= 10V
D
Limited By Package
V
GS
40
0
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
25
50
75
100
125
150
175
T
T
, Case Temperature (°C)
J
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
0.02
0.01
Ri (°C/W) τi (sec)
0.01
0.001
τ
J τJ
τ
τ
Cτ
0.1072
0.2787
0.1143
0.000096
0.002614
0.013847
τ
1τ1
τ
2 τ2
3τ3
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF2907ZS-7PPbF
15V
700
600
500
400
300
200
100
0
DRIVER
+
L
V
DS
I
D
TOP
24A
34A
BOTTOM 110A
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
V
G
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
I
I
I
= 250µA
= 1.0mA
= 1.0A
50KΩ
D
D
D
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
3mA
-75 -50 -25
0
T
25 50 75 100 125 150 175 200
, Temperature ( °C )
I
I
D
G
Current Sampling Resistors
J
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRF2907ZS-7PPbF
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
0.01
0.05
0.10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
200
150
100
50
TOP
BOTTOM 1% Duty Cycle
= 110A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
J
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
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7
IRF2907ZS-7PPbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRF2907ZS-7PPbF
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRF2907ZS-7PPbF
D2Pak - 7 Pin Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
10
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