IRF3205ZPBF [INFINEON]
AUTOMOTIVE MOSFET; 汽车MOSFET
| 型号： | IRF3205ZPBF |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE MOSFET |
| 文件： | 总13页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95129
IRF3205ZPbF
IRF3205ZSPbF
IRF3205ZLPbF
AUTOMOTIVE MOSFET
Features
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
D
VDSS = 55V
Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 6.5mΩ
l
Lead-Free
G
Description
ID = 75A
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processingtechniquestoachieveextremelylowon-
resistance per silicon area. Additional features of
thisdesign area175°Cjunctionoperatingtempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
thisdesignanextremelyefficientandreliabledevice
foruseinAutomotiveapplicationsandawidevariety
of other applications.
S
TO-220AB
D2Pak
TO-262
IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF
Absolute Maximum Ratings
Parameter
Max.
110
78
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
I
I
I
I
@ T = 25°C
C
D
D
D
@ T = 100°C
C
A
@ T = 25°C
C
75
440
170
DM
P
@T = 25°C
Power Dissipation
C
W
D
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
1.1
± 20
W/°C
V
V
GS
EAS (Thermally limited)
180
250
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (Tested )
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
EAR
mJ
T
J
Operating Junction and
-55 to + 175
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.90
–––
62
Units
°C/W
RθJC
Junction-to-Case
RθCS
RθJA
RθJA
0.50
–––
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount)
www.irf.com
1
3/18/04
IRF3205ZS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
4.9
–––
–––
–––
–––
–––
6.5
4.0
–––
20
V
GS = 10V, ID = 66A
VDS = VGS, ID = 250µA
DS = 25V, ID = 66A
VGS(th)
V
S
gfs
Forward Transconductance
71
V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA VDS = 55V, VGS = 0V
250
200
V
V
V
DS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
nC
GS = 20V
GS = -20V
––– -200
Qg
Qgs
Qgd
td(on)
tr
76
21
30
18
95
45
67
4.5
110
–––
–––
–––
–––
–––
–––
–––
ID = 66A
VDS = 44V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VGS = 10V
VDD = 28V
ID = 66A
Rise Time
td(off)
tf
Turn-Off Delay Time
ns
RG = 6.8 Ω
VGS = 10V
Fall Time
LD
Internal Drain Inductance
Between lead,
nH 6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 3450 –––
Output Capacitance
–––
–––
550
310
–––
–––
V
Reverse Transfer Capacitance
Output Capacitance
––– 1940 –––
Output Capacitance
–––
–––
430
640
–––
–––
V
V
GS = 0V, VDS = 44V, ƒ = 1.0MHz
GS = 0V, VDS = 0V to 44V
Coss eff.
Effective Output Capacitance
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
Continuous Source Current
–––
–––
75
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
440
integral reverse
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
28
1.3
42
38
V
T = 25°C, I = 66A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 66A, VDD = 25V
J F
rr
di/dt = 100A/µs
Q
t
25
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRF3205ZS/LPbF
1000
100
10
1000
100
10
VGS
15V
10V
8ꢀ0V
7ꢀ0V
6ꢀ0V
5ꢀ5V
5ꢀ0V
VGS
15V
10V
8ꢀ0V
7ꢀ0V
6ꢀ0V
5ꢀ5V
5ꢀ0V
TOP
TOP
BOTTOM 4ꢀ5V
BOTTOM 4ꢀ5V
4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
1000
T
= 175°C
J
T
= 25°C
J
100
80
60
40
20
0
T
= 175°C
J
100
10
1
T
= 25°C
J
V
= 10V
DS
20µs PULSE WIDTH
V
DS
= 25V
20µs PULSE WIDTH
8.0 9.0 10.0
, Gate-to-Source Voltage (V)
4.0
5.0
6.0
7.0
11.0
0
20
D,
40
60
80
100
I
Drain-to-Source Current (A)
V
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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3
IRF3205ZS/LPbF
6000
20
16
12
8
V
= 0V,
= C
f = 1 MHZ
GS
I
= 66A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
= 44V
DS
= C
5000
4000
3000
2000
1000
0
rss
oss
gd
VDS= 28V
VDS= 11V
= C + C
ds
gd
Ciss
4
Coss
Crss
0
0
20
40
60
80
100
120
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
100.0
10.0
1.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
2.2
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF3205ZS/LPbF
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
LIMITED BY PACKAGE
I
= 66A
D
V
= 10V
GS
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3205ZS/LPbF
350
300
250
200
150
100
50
15V
ID
27A
47A
TOP
BOTTOM 66A
DRIVER
L
V
DS
D.U.T
AS
R
G
+
-
V
DD
I
A
V
20V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
I
= 250µA
D
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
1K
T
J
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRF3205ZS/LPbF
1000
100
10
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
∆
assuming
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.05
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
200
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 66A
Single Pulse
I
160
120
80
40
0
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
Fig 16. Maximum Avalanche Energy
EAS (AR) = PD (ave)·tav
Vs. Temperature
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7
IRF3205ZS/LPbF
Driver Gate Drive
P.W.
P.W.
Period
DꢀUꢀT
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as DꢀUꢀTꢀ
• ISD controlled by Duty Factor "D"
• DꢀUꢀTꢀ - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
DꢀUꢀTꢀ
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRF3205ZS/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
1
2
3
1- GATE
1- GATE
2- DRAIN
3- SOURCE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMBLED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
AS S E MB LY
LOT CODE
LINE C
www.irf.com
9
IRF3205ZS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
P AR T N U MB E R
D AT E COD E
L OT COD E 8024
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L IN E "L "
IN T E R N AT IONAL
R E CT IF IE R
L OGO
F 530S
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
YE AR
WE E K 02
L IN E
0 = 2000
AS S E MB L Y
L OT COD E
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
L OGO
F 530S
D AT E COD E
P
=
D E S IGN AT E S L E AD-F R E E
P R OD U CT (OP T ION AL )
AS S E M B L Y
L OT CODE
YE AR
W E E K 02
A = AS S E MB L Y S IT E CODE
0 = 2000
10
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IRF3205ZS/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
WEEK 19
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WEEK 19
A= ASSEMBLY SITE CODE
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11
IRF3205ZS/LPbF
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.08mH
This value determined from sample failure population. 100%
tested to this value in production.
RG = 25Ω, IAS = 66A, VGS =10V. Part not
recommended for use above this value.
This is only applied to TO-220AB pakcage.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
from 0 to 80% VDSS
.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101]market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/04
12
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
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INFINEON
IRF3205ZSTRLPBF
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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