IRF350 [INFINEON]
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A); 晶体管N沟道（ VDSS = 400V ， RDS（ON） = 0.300ohm ，ID = 14A）
| 型号： | IRF350 |
| 厂家： | 
Infineon |
| 描述： | TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A) |
| 文件： | 总7页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90339F
IRF350
JANTX2N6768
JANTXV2N6768
REPETITIVEAVALANCHEANDdv/dtRATED
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
[REF:MIL-PRF-19500/543]
400V, N-CHANNEL
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRF350
400V
0.300Ω
14A
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
TO-3
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
14
9.0
D
GS
C
A
I
D
= 10V, T = 100°C Continuous Drain Current
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
56
DM
@ T = 25°C
P
D
150
W
W/°C
V
C
1.2
V
GS
Gate-to-Source Voltage
±20
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
11.3
14
mJ
AS
I
A
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
15
mJ
AR
dv/dt
4.0
V/ns
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
For footnotes refer to the last page
www.irf.com
1
01/22/01
IRF350
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
400
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
0.46
V/°C
DSS
J
D
R
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.300
0.400
4.0
V
= 10V, I =9.0A➀
GS D
DS(on)
Ω
V
=10V, I =14A ➀
GS
D
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
6.0
—
V
V
DS
= V , I =250µA
GS(th)
fs
GS
D
Ω
g
—
S (
)
V
> 15V, I
=9.0A➀
DS
DS
I
25
V =320V, V =0V
DS GS
DSS
µA
—
250
V
=320V
DS
= 0V, T = 125°C
V
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
52
5.0
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
110
18
V
=20V
GSS
GS
nA
nC
I
V
GS
=-20V
GSS
Q
V
=10V, ID 14A
GS =
g
Q
Q
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
V
DS
=200V
gs
65
gd
d(on)
r
t
t
35
V
DD
=200V, I =14A,
D
190
170
130
—
R
G
=2.35Ω
n s
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
L
L
Total Inductance
nH
S +
D
Measured from the center of
drain pad to center of source
pad
C
C
C
Input Capacitance
—
—
—
2600
680
V
= 0V, V =25V
iss
GS DS
Output Capacitance
—
—
pF
f = 1.0MHz
oss
rss
Reverse Transfer Capacitance
250
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
—
—
—
—
14
56
S
A
I
Pulse Source Current (Body Diode) ➀
SM
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.7
V
T = 25°C, I =14A, V
= 0V ➀
j
SD
S
GS
t
1200 nS
250 µc
T = 25°C, I =14A, di/dt ≤100A/µs
j
rr
F
Q
RR
V
≤50V ➀
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction to Case
—
—
—
—
0.83
30
thJC
thJA
°C/W
Junction to Ambient
Typical socket mount
For footnotes refer to the last page
2
www.irf.com
IRF350
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF350
13 a& b
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF350
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF350
15V
DRIVER
L
V
D S
D.U.T
AS
R
G
+
-
V
D D
I
A
10V
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRF350
Foot Notes:
➀➀ I
SD
≤14A, di/dt ≤145A/µs,
≤ 400V, T ≤ 150°C
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
V
DD
J
Suggested RG =2.35 Ω
➀➀➀V
=50V, starting T = 25°C,
DD
J
➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Peak I = 14A,
L
Case Outline and Dimensions —TO-204AA (Modified TO-3)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 01/01
www.irf.com
7
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