IRF3706STRR [INFINEON]
Power Field-Effect Transistor, 75A I(D), 20V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3;
| 型号： | IRF3706STRR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 75A I(D), 20V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93936A
IRF3706
IRF3706S
IRF3706L
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
VDSS
RDS(on) max
ID
Converters with Synchronous Rectification
for Telecom and Industrial Use
20V
8.5mΩ
77A
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
D2Pak
IRF3706S
TO-262
IRF3706L
TO-220AB
IRF3706
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-to-Source Voltage
± 12
V
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
77
54
A
280
PD @TC = 25°C
PD @TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
88
44
W
W
0.59
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 175
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.7
Units
RθJC
RθCS
RθJA
RθJA
–––
0.50
–––
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)ꢀ
–––
62
°C/W
40
Notes through ꢀare on page 11
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1
7/5/00
IRF3706/3706S/3706L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.Units
Conditions
VGS = 0V, ID = 250µA
0.021 ––– V/°C Reference to 25°C, ID = 1mA
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
–––
–––
0.6
6.0
7.3
8.5
VGS = 10V, ID = 36A
RDS(on)
Static Drain-to-Source On-Resistance
10.5 mΩ VGS = 4.5V, ID = 28A
11
22
2.0
20
VGS = 2.8V, ID = 18A
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS(th)
IDSS
Gate Threshold Voltage
–––
–––
–––
–––
V
–––
–––
–––
–––
µA
Drain-to-Source Leakage Current
100
200
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
––– -200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 16V, ID = 57A
ID = 28A
53
––– –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
23
35
12
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
8.0
nC VDS = 10V
VGS = 4.5V
5.5 8.3
16 24
VGS = 0V, VDS = 10V
VDD = 10V
6.8 –––
87 –––
17 –––
4.8 –––
ID = 28A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2410 –––
––– 1070 –––
––– 140 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
220
Units
mJ
IAR
Avalanche Current
–––
28
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
77
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
280
S
––– 0.88 1.3
––– 0.82 –––
V
TJ = 25°C, IS = 36A, VGS = 0V
VSD
Diode Forward Voltage
TJ = 125°C, IS = 36A, VGS = 0V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 45
––– 65
––– 49
68
98
74
ns
TJ = 25°C, IF = 36A, VR=20V
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 36A, VR=20V
nC di/dt = 100A/µs
Qrr
––– 78 120
2
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IRF3706/3706S/3706L
1000
100
10
1000
VGS
10V
VGS
TOP
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
BOTTOM2.5V
100
2.5V
2.5V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 175 C
J
T = 25 C
J
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000
71A
=
I
D
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
100
V
= 15V
DS
V
= 10V
20µs PULSE WIDTH
GS
10
2.5
3.5
4.5
5.5 6.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF3706/3706S/3706L
10
8
100000
I
D
= 28A
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
ds
SHORTED
V
V
= 16V
= 10V
iss
gs
gd
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
Ciss
6
Coss
4
Crss
10
2
10
0
1
100
0
10
20
30
40
50
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 175 C
J
100us
1ms
°
T = 25 C
J
10ms
1
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.2
1
10
100
0.6
1.0
1.4
1.8
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF3706/3706S/3706L
RD
80
60
40
20
0
VDS
VGS
D.U.T.
RG
+VDD
-
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3706/3706S/3706L
500
400
300
200
100
0
1 5V
I
D
TOP
12A
24A
28A
BOTTOM
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
4.5 V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF3706/3706S/3706L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRF3706/3706S/3706L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415 )
3.78 (.149)
-
B
-
10.29 (.405 )
2.87 (.1 13)
2.62 (.1 03)
4 .69 (.18 5)
4 .20 (.16 5)
3.54 (.139)
1.3 2 (.05 2)
1.2 2 (.04 8)
-
A
-
6.4 7 (.2 55)
6.1 0 (.2 40)
4
15 .24 (.60 0)
14 .84 (.58 4)
1.15 (.04 5)
M IN
LE A D A S S IG N M E N TS
1 - G A T E
1
2
3
2 - D R A IN
3 - S O U R C E
4 - D R A IN
1 4.09 (.5 55)
1 3.47 (.5 30)
4.06 (.160)
3.55 (.140)
0.93 (.0 37)
0.69 (.0 27)
0.55 (.02 2)
0.46 (.01 8)
3X
3 X
1 .40 (.05 5)
3 X
1 .15 (.04 5)
0.3 6 (.014 )
M
B
A
M
2.9 2 (.115 )
2.6 4 (.104 )
2 .54 (.10 0)
2X
N O TE S :
1
2
D IM E N S IO N IN G
&
TO LE R A N C IN G P E R A N S I Y 14 .5 M , 1 982.
3
4
O U TL IN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B .
C O N TR O LLIN G D IM E N S IO N : IN C H
H E A T S IN K
&
LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E XAM PL E : TH IS IS A N IR F 1010
W ITH AS SE M BLY
A
INTE R N AT ION AL
R E C TIFIE R
PA R T N U M BE R
LO T C O D E 9B 1M
IR F 1010
9246
LO G O
9B
1M
D ATE C O D E
(YYW W )
A S SE M B LY
LOT
C O D E
YY
=
YEA R
= W EE K
W W
8
www.irf.com
IRF3706/3706S/3706L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
M AX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
M INIMUM RECOM MENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIM ENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.
CONTROLLING DIM ENSION : INCH.
HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
D2Pak Part Marking Information
A
INTERNATIONAL
RECTIFIER
PART NUM BER
F530S
LOGO
9246
1M
DATE CODE
(YYW W )
9B
ASSEM BLY
YY
=
YEAR
= W EEK
LOT CODE
W W
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9
IRF3706/3706S/3706L
TO-262 Package Outline
TO-262 Part Marking Information
10
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IRF3706/3706S/3706L
D2Pak Tape & Reel Information
TR R
1 .60 (.0 63)
1 .50 (.0 59)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEE D D IREC TIO N
TR L
11.60 (.457)
11.40 (.449)
1 .85 (.0 73)
1 .65 (.0 65)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED D IRE CTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
60.00 (2.362)
M IN.
30.40 (1.197)
M AX.
NO TES
1. CO M FORM S TO EIA-418.
2. CO NTROLLING DIM ENSIO N: M ILLIM ETER.
3. DIM ENSION M EASURED
:
26.40 (1.039)
24.40 (.961)
4
@ HUB.
3
4. INCLUDES FLANGE DISTORTION
@
O UTER EDGE.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is only applied to TO-220AB package
max. junction temperature.
Starting TJ = 25°C, L = 0.54mH
RG = 25Ω, IAS = 28A.
ꢀThis is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 7/00
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11
相关型号：
IRF3707STRLPBF
Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
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