IRF3708LPBF [INFINEON]
SMPS MOSFET HEXFET㈢Power MOSFET; 开关电源MOSFET HEXFET㈢Power MOSFET
| 型号： | IRF3708LPBF |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET HEXFET㈢Power MOSFET |
| 文件： | 总11页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95363
IRF3708PbF
IRF3708SPbF
IRF3708LPbF
SMPS MOSFET
Applications
HEXFET® Power MOSFET
l High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
VDSS
30V
RDS(on) max
ID
12mΩ
62A
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
D2Pak
IRF3708S
TO-262
IRF3708L
l Fully Characterized Avalanche Voltage
TO-220AB
IRF3708
and Current
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
±12
V
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
62
52
A
248
PD @TC = 25°C
PD @TC = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
87
61
W
W
0.58
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 175
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)*
Typ.
Max.
1.73
–––
62
Units
RθJC
RθCS
RθJA
RθJA
–––
0.50
–––
–––
°C/W
40
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 10
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1
6/10/04
IRF3708/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
Static Drain-to-Source On-Resistance –––
8
12.0
V
GS = 10V, ID = 15A
RDS(on)
9.5
13.5 mΩ VGS = 4.5V, ID = 12A
–––
0.6
14.5
–––
–––
–––
–––
–––
29
2.0
VGS = 2.8V, ID = 7.5A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VGS(th)
IDSS
Gate Threshold Voltage
V
–––
–––
–––
–––
20
µA
Drain-to-Source Leakage Current
100
200
-200
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
IGSS
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 15V, ID = 50A
ID = 24.8A
49
––– –––
24 –––
6.7 –––
5.8 –––
S
Qg
–––
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 15V
VGS = 4.5V
14
21
VGS = 0V, ID = 24.8A, VDS = 15V
VDD = 15V
7.2 –––
50 –––
ID = 24.8A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 17.6 –––
––– 3.7 –––
RG = 0.6Ω
VGS = 4.5V
Ciss
Coss
Crss
Input Capacitance
––– 2417 –––
––– 707 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V
ƒ = 1.0MHz
–––
52 –––
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
213
Units
mJ
IAR
Avalanche Current
–––
62
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
––– –––
––– –––
62
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
248
S
––– 0.88 1.3
––– 0.80 –––
V
TJ = 25°C, IS = 31A, VGS = 0V
VSD
Diode Forward Voltage
TJ = 125°C, IS = 31A, VGS = 0V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 41
––– 64
––– 43
62
96
65
ns
TJ = 25°C, IF = 31A, VR=20V
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 31A, VR=20V
nC di/dt = 100A/µs
Qrr
––– 70 105
2
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IRF3708/S/LPbF
1000
100
10
1000
100
10
VGS
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
VGS
TOP
TOP
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
1000
100
10
62A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
V
= 15V
20µs PULSE WIDTH
DS
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
2.0
3.0
4.0
5.0 6.0
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF3708/S/LPbF
3500
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
=
24.8A
GS
V
= 15V
C
= C + C
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
2800
2100
1400
700
0
oss
ds
gd
C
iss
6
4
C
oss
2
C
rss
0
1
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
10us
J
°
100us
T = 25 C
J
1ms
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.1
0.8
1.4
2.0
2.6
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF3708/S/LPbF
RD
70
60
50
40
30
20
10
0
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
0.02
t
SINGLE PULSE
(THERMAL RESPONSE)
1
0.01
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3708/S/LPbF
0.025
0.017
0.015
0.013
0.011
0.009
0.007
0.020
0.015
VGS = 4.5V
0.010
I
= 31A
D
VGS = 10V
0.005
0
50
100
150
200
250
300
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0 10.0
I
, Drain Current ( A )
D
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
600
DS
D.U.T.
-
V
I
G
D
10A
V
GS
TOP
3mA
Charge
20.7A
BOTTOM 24.8A
480
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Gate Charge Test Circuit
360
240
120
0
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
25
50
75
100
125
150
175
I
A
°
20V
Starting T , Junction Temperature ( C)
J
0.01Ω
t
p
I
AS
Fig 15a&b. Unclamped Inductive Test circuit
Fig 15c. Maximum Avalanche Energy
and Waveforms
Vs. Drain Current
6
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IRF3708/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
1
2
3
1- GATE
1- GATE
2- DRAIN
3- SOURCE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMB LED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
INTE RNAT IONAL
RECT IFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S EMBLY
LOT CODE
LINE C
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7
IRF3708/S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
P AR T N U MB E R
L OT COD E 8024
IN T E R N AT ION AL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L IN E "L "
F 530S
D AT E CODE
Y E AR 0 = 2000
W E E K 02
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT COD E
L INE
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
L OGO
F 530 S
D AT E CODE
P
=
D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
AS S E M B L Y
L OT CODE
YE AR
WE E K 02
A = AS S E MB L Y S IT E COD E
0 = 2000
8
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IRF3708/S/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
E XAMPLE : THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WE EK 19
Note: "P" in assembly line
pos ition indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
AS S E MBL Y
LOT CODE
WEE K 19
A = AS S E MB L Y S IT E CODE
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9
IRF3708/S/LPbF
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Starting TJ = 25°C, L = 0.7 mH
RG = 25Ω, IAS = 24.8 A.
This is only applied to TO-220AB package
Data and specifications subject to change without notice.
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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