IRF460SCX [INFINEON]

500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - Screening Level TX;


型号：	IRF460SCX
厂家：	Infineon
描述：	500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - Screening Level TX
文件：	总7页 (文件大小：969K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD- 90467B

IRF460

500V, N-CHANNEL

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTORS

THRU-HOLE -TO-3 (TO-204AE)

Product Summary

Part Number

BV_DSS

RDS(on)

I_D

IRF460

500V

21A

0.27

TO-3 (TO-204AE)

Description

Features

HEXFET^®MOSFET technology is the key to IR Hirel advanced

line of power MOSFET transistors. The efficient geometry and

unique processing of this latest “State of the Art” design

achieves: very low on-state resistance combined with high trans

conductance; superior reverse energy and diode recovery dv/dt

capability.

 Repetitive Avalanche Ratings

 Dynamic dv/dt Rating

 Hermetically Sealed

 Simple Drive Requirements

The HEXFET transistors also feature all of the well established

advantages of MOSFETs such as voltage control, very fast

switching and temperature stability of the electrical parameters.

They are well suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers

and high energy pulse circuits.

Absolute Maximum Ratings

Symbol

Value

Parameter

Units

I_D1@ V_GS= 10V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 10V, T_C= 100°C Continuous Drain Current

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

300

2.4

± 20

1200

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V_GS

E_AS

I_AR

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

3.5

-55 to + 150

T_STG

°C

300 (0.063 in. (1.6mm) from case for 10s)

11.5 (Typical)

Weight

For footnotes refer to the page 2.

2019-07-29

International Rectifier HiRel Products, Inc.

IRF460

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Symbol

BV_DSS

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

Test Conditions

V_GS= 0V, I_D= 1.0mA

V/°C Reference to 25°C, I_D= 1.0mA

500

–––

BV_DSS/T_J

Breakdown Voltage Temp. Coefficient

0.78 –––

––– 0.27

––– 0.31

_GS= 10V, I_D2= 14A 

_GS= 10V, I_D2= 21A 

R_DS(on)

Static Drain-to-Source On-Resistance



V_GS(th)

I_DSS

Gate Threshold Voltage

2.0

–––

4.0

250

100

V_DS= V_GS, I_D= 250µA

V_DS= 400V, V_GS= 0V

Zero Gate Voltage Drain Current

µA

_DS= 400V,V_GS= 0V,T_J=125°C

V_GS= 20V

V_GS= -20V

I_GSS

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

––– -100

Q_G

Q_GS

Q_GD

t_d(on)

–––

190

I_D1= 21A

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

V_DS= 250V

135

120

130

V_GS= 10V

V_DD= 250V

I_D1= 21A

–––

t_d(off)

t_f

R_G= 2.35

V_GS= 10V

Measured from Drain lead (6mm /

0.25 in from package) to Source

lead (6mm/ 0.25 in from package)

Ls +L_D

Total Inductance

–––

6.1

–––

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 4300 –––

––– 1000 –––

–––

V_GS= 0V

V_DS= 25V

ƒ = 1.0MHz

250

–––

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) 

Diode Forward Voltage

Min. Typ. Max. Units

Test Conditions

I_S

––– –––

I_SM

V_SD

t_rr

1.8

T_J= 25°C,I_S= 21A, V_GS= 0V

T_J= 25°C ,I_F= 21A,V_DD50V

di/dt = 100A/µs 

Reverse Recovery Time

Reverse Recovery Charge

––– ––– 580

––– ––– 8.1

µC

Q_rr

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

t_on

Forward Turn-On Time

Thermal Resistance

Symbol

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

R_JC

R_JA

–––

0.42

°C/W

Junction-to-Ambient (Typical socket mount)

–––

Footnotes:

Repetitive Rating; Pulse width limited by maximum junction temperature.

V_DD= 50V, starting T_J= 25°C, L= 5.44mH, Peak I_L= 21A, V_GS= 10V.

I_SD 21A, di/dt  160A/µs, V_DD500V, T_J150°C.Suggested R_G= 2.35Ω

 Pulse width  300 µs; Duty Cycle  2%

2019-07-29

International Rectifier HiRel Products, Inc.

IRF460

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

2019-07-29

International Rectifier HiRel Products, Inc.

IRF460

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 10. Maximum Avalanche Energy

Fig 9. Maximum Drain Current Vs. Case Temperature

Vs. Drain Current

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

International Rectifier HiRel Products, Inc.

2019-07-29

IRF460

(BR)DSS

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

Fig 13a. Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

Fig 14a. Switching Time Test Circuit

Fig 14b. Switching Time Waveforms

2019-07-29

International Rectifier HiRel Products, Inc.

IRF460

Case Outline and Dimensions - TO-204AE (Modified TO-3)

www.infineon.com/irhirel

Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555

Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776

San Jose, California 95134, USA Tel: +1 (408) 434-5000

Data and specifications subject to change without notice.

2019-07-29

International Rectifier HiRel Products, Inc.

IRF460

IMPORTANT NOTICE

The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The

data contained herein is a characterization of the component based on internal standards and is intended to

demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and

analysis to determine suitability in the application environment to confirm compliance to your system requirements.

With respect to any example hints or any typical values stated herein and/or any information regarding the application of

the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without

limitation warranties on non- infringement of intellectual property rights and any third party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s product and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any

customer’s technical departments to evaluate the suitability of the product for the intended applications and the

completeness of the product information given in this document with respect to applications.

For further information on the product, technology, delivery terms and conditions and prices, please contact your local

sales representative or go to (www.infineon.com/hirel).

WARNING

Due to technical requirements products may contain dangerous substances. For information on the types in question,

please contact your nearest Infineon Technologies office.

2019-07-29

International Rectifier HiRel Products, Inc.

IRF460SCX [INFINEON]

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