IRF511-010PBF [INFINEON]

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;

IRF511-010PBF


型号：	IRF511-010PBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 局域网脉冲晶体管
文件：	总1页 (文件大小：42K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

IRF511-011

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

INFINEON

IRF511-011PBF

5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET

INFINEON

IRF511-012PBF

5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET

INFINEON

IRF511-013

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

INFINEON

IRF511-013PBF

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

INFINEON

IRF511R

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5.6A I(D) | TO-220AB

ETC

IRF512

N-Channel Power MOSFETs, 5.5 A, 60-100V

FAIRCHILD

IRF512

N-Channel Enhancement-Mode Vertical DMOS Power FETs

SUPERTEX

IRF512

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

HARRIS

IRF512

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOTOROLA

IRF512

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

VISHAY

IRF512-001PBF

4.9A, 100V, 0.74ohm, N-CHANNEL, Si, POWER, MOSFET

INFINEON

©2020 ICPDF网联系我们和版权申明