IRF540NSPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRF540NSPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总11页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95130
IRF540NSPbF
IRF540NLPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
HEXFET® Power MOSFET
D
VDSS = 100V
l Fully Avalanche Rated
l Lead-Free
RDS(on) = 44mΩ
G
Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
ID = 33A
S
D2Pak
IRF540NSPbF IRF540NLPbF
TO-262
The through-hole version (IRF540NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
33
23
A
110
PD @TC = 25°C
Power Dissipation
130
W
W/°C
V
Linear Derating Factor
0.87
± 20
16
VGS
IAR
Gate-to-Source Voltage
Avalanche Current
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
13
mJ
V/ns
7.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.15
Units
RθJC
RθJA
°C/W
Junction-to-Ambient (PCB mount)**
–––
40
www.irf.com
1
3/18/04
IRF540NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 44
mΩ VGS = 10V, ID = 16A
2.0
21
––– 4.0
––– –––
V
S
VDS = VGS, ID = 250µA
Forward Transconductance
VDS = 50V, ID = 16A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 71
––– ––– 14
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 16A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 10V, See Fig. 6 and 13
––– –––
21
–––
–––
–––
–––
11 –––
35 –––
39 –––
35 –––
VDD = 50V
ID = 16A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 5.1Ω
VGS = 10V, See Fig. 10
Between lead,
6mm (0.25in.)
D
S
4ꢀ5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
from package
7ꢀ5
and center of die contact
VGS = 0V
Ciss
Coss
Crss
EAS
Input Capacitance
––– 1960 –––
––– 250 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
40 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 700ꢀ185 mJ IAS = 16A, L = 1.5mH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
33
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
110
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.2
––– 115 170
––– 505 760
V
TJ = 25°C, IS = 16A, VGS = 0V
TJ = 25°C, IF = 16A
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L =1.5mH
RG = 25Ω, IAS = 16A. (See Figure 12)
ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
ꢀ This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Uses IRF540N data and test conditions.
,
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRF540NS/LPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 175 C
J
°
T = 25 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.5
33A
=
I
D
3.0
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
100
°
T = 175 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
10
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5.0
6.0
7.0 8.0
9.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF540NS/LPbF
3000
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 16A
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
rss
gd
2500
2000
1500
1000
500
C
= C + C
oss
ds
gd
C
iss
C
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
0
0
20
40
60
80
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
1
100
10
1
°
T = 175 C
J
100µsec
1msec
°
T = 25 C
J
T
= 25°C
10msec
A
T = 175°C
J
V
= 0 V
GS
Single Pulse
0.1
0.2
0.1
0.6
1.0
1.4
1.8
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF540NS/LPbF
35
30
25
20
15
10
5
RD
VDS
VGS
DꢀUꢀTꢀ
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10aꢀ Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10bꢀ Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF540NS/LPbF
400
300
200
100
0
I
15V
D
TOP
6.5A
11.3A
BOTTOM 16A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12aꢀ Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12cꢀ Maximum Avalanche Energy
Vs# Drain Current
I
AS
Fig 12bꢀ Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13bꢀ Gate Charge Test Circuit
Fig 13aꢀ Basic Gate Charge Waveform
6
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IRF540NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
DꢀUꢀT*
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• DꢀUꢀTꢀ - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of DꢀUꢀT for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5ꢀ0V for Logic Level and 3V Drive Devices
Fig 14ꢀ For N-channel HEXFET® power MOSFETs
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7
IRF540NS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
P AR T N U MB E R
L OT CODE 8024
IN T E R N AT IONAL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L INE "L "
F 530S
DAT E CODE
YE AR 0 = 2000
WE E K 02
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT CODE
L INE
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
L OGO
F 530S
D AT E COD E
P
=
D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
AS S E MB L Y
L OT COD E
YE AR
W E E K 02
A = AS S E MB L Y S IT E COD E
0 = 2000
8
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IRF540NS/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
Note: "P" in assembly line
pos ition indicates "Lead-F ree"
AS S E MBL Y
LOT CODE
LINE C
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WE EK 19
A= ASSEMBLY SITE CODE
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9
IRF540NS/LPbF
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/04
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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