IRF5M3415SCX [INFINEON]

150V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - Screening Level TX;


型号：	IRF5M3415SCX
厂家：	Infineon
描述：	150V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - Screening Level TX 局域网开关脉冲晶体管
文件：	总7页 (文件大小：910K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD- 94286B

IRF5M3415

150V, N-CHANNEL

HEXFET^®MOSFET TECHNOLOGY

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number

BV_DSS

RDS(on)

I_D

IRF5M3415

150V

35A

0.049

TO-254AA

Features

Description

Fifth Generation HEXFET^®power MOSFET technology

is the key to IR Hirel utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the fast

switching speed and ruggedized device design that

 Low RDS(on)

 Avalanche Energy Ratings

 Dynamic dv/dt Rating

 Simple Drive Requirements

 Hermetically Sealed

 Light Weight

HEXFET^®

power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such as

switching power supplies, motor controls, inverters,

choppers, audio amplifiers and high-energy pulse

circuits.

Absolute Maximum Ratings

Symbol

Value

Parameter

Units

I_D1@ V_GS= 10V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 10V, T_C= 100°C Continuous Drain Current

140

125

1.0

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V_GS

E_AS

I_AR

± 20

290

E_AR

dv/dt

T_J

12.5

2.0

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery 

Operating Junction and

Storage Temperature Range

Lead Temperature

-55 to + 150

T_STG

°C

300 (0.063in./1.6mm from case for 10s)

9.3 (Typical)

Weight

For footnotes refer to the page 2.

2021-04-29

International Rectifier HiRel Products, Inc.

IRF5M3415

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Symbol

BV_DSS

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

Test Conditions

V_GS= 0V, I_D= 250µA

150

–––

BV_DSS/T_J

R_DS(on)

Breakdown Voltage Temp. Coefficient

0.18 –––

––– 0.049

V/°C Reference to 25°C, I_D= 1.0mA

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V_GS= 10V, I_D2= 22A 



V_GS(th)

2.0

–––

4.0

–––

250

100

V_DS= V_GS, I_D= 250µA

V_DS= 15V, I_D2= 22A 

V_DS= 150V, V_GS= 0V

V_DS= 120V,V_GS= 0V,T_J=125°C

V_GS= 20V

Gfs

I_DSS

Forward Transconductance

–––

Zero Gate Voltage Drain Current

µA

I_GSS

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

––– -100

V_GS= -20V

I_D2= 22A

Q_G

Q_GS

Q_GD

t_d(on)

–––

200

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

V_DS= 120V

V_GS= 10V

V_DD= 75V

I_D2= 22A

t_d(off)

t_f

R_G= 2.5

V_GS= 10V

Measured from Drain lead (6mm /0.25

Ls +L_D

Total Inductance

–––

6.8

–––

nH in from package) to Source lead

(6mm/ 0.25 in from package)

C_iss

C_oss

C_rss

Input Capacitance

––– 2730 –––

V_GS= 0V

V_DS= 25V

ƒ = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

–––

570

285

–––

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) 

Diode Forward Voltage

Min. Typ. Max. Units

Test Conditions

I_S

––– –––

––– ––– 140

––– ––– 1.3

––– ––– 390

––– ––– 3.3

I_SM

V_SD

t_rr

T_J= 25°C,I_S= 22A, V_GS= 0V

T_J= 25°C ,I_F= 22A,V_DD25V

di/dt = 100A/µs 

Reverse Recovery Time

µC

Q_rr

t_on

Reverse Recovery Charge

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Min.

Typ.

Max.

Units

R_JC

–––

1.0

°C/W

Footnotes:









Repetitive Rating; Pulse width limited by maximum junction temperature.

V_DD= 25V, starting T_J= 25°C, L = 1.2mH, Peak I_L= 22A, V_GS= 10V, R_G=25Ω.

I_SD22A, di/dt  70A/µs, V_DD150V, T_J150°C.

Pulse width  300 µs; Duty Cycle  2%

2021-04-29

International Rectifier HiRel Products, Inc.

IRF5M3415

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

2021-04-29

International Rectifier HiRel Products, Inc.

IRF5M3415

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 10. Maximum Avalanche Energy

Fig 9. Maximum Drain Current Vs.Case Temperature

Vs. Drain Current

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

International Rectifier HiRel Products, Inc.

2021-04-29

IRF5M3415

(BR)DSS

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

Fig 13a. Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

Fig 14a. Switching Time Test Circuit

Fig 14b. Switching Time Waveforms

2021-04-29

International Rectifier HiRel Products, Inc.

IRF5M3415

Note: For the most updated package outline, please see the website: TO-254AA

Case Outline and Dimensions - Low-Ohmic TO-254AA

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will

produce fumes containing beryllium.

www.infineon.com/irhirel

Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555

Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776

San Jose, California 95134, USA Tel: +1 (408) 434-5000

Data and specifications subject to change without notice.

2021-04-29

International Rectifier HiRel Products, Inc.

IRF5M3415

IMPORTANT NOTICE

The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The

data contained herein is a characterization of the component based on internal standards and is intended to

demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and

analysis to determine suitability in the application environment to confirm compliance to your system requirements.

With respect to any example hints or any typical values stated herein and/or any information regarding the application of

the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without

limitation warranties on non- infringement of intellectual property rights and any third party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s product and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any

customer’s technical departments to evaluate the suitability of the product for the intended applications and the

completeness of the product information given in this document with respect to applications.

For further information on the product, technology, delivery terms and conditions and prices, please contact your local

sales representative or go to (www.infineon.com/irhirel).

WARNING

Due to technical requirements products may contain dangerous substances. For information on the types in question,

please contact your nearest Infineon Technologies office.

2021-04-29

International Rectifier HiRel Products, Inc.

IRF5M3415SCX [INFINEON]

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