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IRF5N3205_05 [INFINEON]

HEXFET POWER MOSFET SURFACE MOUNT (SMD-1); HEXFET功率MOSFET表面贴装（ SMD - 1 ）
IRF5N3205_05
型号： IRF5N3205_05
厂家： Infineon    Infineon
描述：

HEXFET POWER MOSFET SURFACE MOUNT (SMD-1)
HEXFET功率MOSFET表面贴装（ SMD - 1 ）
文件： 总7页 (文件大小：171K)
中文：  中文翻译
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PD-94302B  
HEXFET® POWER MOSFET  
SURFACE MOUNT (SMD-1)  
IRF5N3205  
55V, N-CHANNEL  
Product Summary  
Part Number  
BV  
RDS(on)  
ID  
DSS  
IRF5N3205  
55V  
0.008Ω 55A*  
Fifth Generation HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachievethelowestpossibleon-resistance  
per silicon unit area. This benefit, combined with the  
fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
providesthedesignerwithanextremelyefficientdevice  
for use in a wide variety of applications.  
SMD-1  
Features:  
n
n
n
n
n
n
n
Low RDS(on)  
Avalanche Energy Ratings  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
These devices are well-suited for applications such  
as switching power supplies, motor controls, inverters,  
choppers, audio amplifiers and high-energy pulse  
circuits.  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
55*  
55*  
D
D
GS  
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
220  
DM  
@ T = 25°C  
P
D
125  
W
W/°C  
V
C
Linear Derating Factor  
1.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
140  
mJ  
A
AS  
I
55  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
12.5  
2.7  
mJ  
V/ns  
AR  
dv/dt  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Package Mounting Surface Temp.  
Weight  
300 (for 5s)  
2.6 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
05/17/05  
IRF5N3205  
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
Drain-to-Source Breakdown Voltage  
55  
—
—
V
V
= 0V, I = 250µA  
D
DSS  
GS  
V/°C Reference to 25°C, I = 1.0mA  
∆BV  
/∆T Temperature Coefficient of Breakdown  
—
0.053  
—
DSS  
J
D
Voltage  
R
V
Static Drain-to-Source On-State  
Resistance  
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
—
—
0.008  
Ω
V
= 10V, I = 55A  
GS D  
Ã
DS(on)  
2.0  
55  
—
—
—
—
—
4.0  
—
25  
V
S ( )  
V
DS  
= V , I = 250µA  
GS(th)  
fs  
GS  
D
Ω
g
V
=15V, I  
= 55A Ã  
DS  
V
DS  
I
= 55V ,V =0V  
DSS  
DS GS  
µA  
—
250  
V
= 44V,  
DS  
= 0V, T =125°C  
V
GS  
J
I
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Total Inductance  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0  
100  
-100  
170  
32  
74  
30  
300  
65  
35  
V
=-20V  
= -20V  
GSS  
GSS  
GS  
nA  
nC  
V
GS  
Q
Q
Q
V
=10V, I = 55A  
g
gs  
gd  
d(on)  
r
GS D  
V
= 44V  
DS  
t
t
t
t
V
DD  
GS  
= 27.5V, I = 55A,  
= 10V, R = 2.5Ω  
D
G
V
ns  
d(off)  
f
L
+ L  
—
Measured from the center of drain  
pad to the center of source pad  
S
D
nH  
l
C
C
C
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
—
—
—
3600  
1200  
435  
—
—
—
V
= 0V, V  
= 25V  
f = 1.0MHz  
iss  
oss  
rss  
GS DS  
pF  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min Typ Max Units  
Test Conditions  
I
I
V
t
Q
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode) À  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
—
—
—
—
—
—
—
—
—
—
55*  
220  
1.3  
130  
410 nC  
S
SM  
SD  
rr  
A
V
ns  
T = 25°C, I = 55A, V  
= 0V Ã  
j
S
GS  
T = 25°C, I = 55A, di/dt ≤ 100A/µs  
j
F
V
≤ 25V Ã  
RR  
DD  
t
on  
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
* Current is limited by package  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
Junction-to-Case  
—
—
1.0  
°C/W  
thJC  
Note: Corresponding Spice and Saber models are available on International Rectifier Website.  
For footnotes refer to the last page  
2
www.irf.com  
IRF5N3205  
1000  
100  
10  
1000  
100  
10  
VGS  
15V  
VGS  
15V  
TOP  
TOP  
10V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
BOTTOM 4.5V  
BOTTOM 4.5V  
4.5V  
4.5V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
T = 25 C  
J
°
T = 150 C  
J
°
1
0.1  
1
0.1  
1
10  
100  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1000  
100  
10  
2.0  
1.5  
1.0  
0.5  
0.0  
55A  
=
I
D
°
T = 25 C  
J
°
T = 150 C  
J
V
= 25V  
DS  
20µs PULSE WIDTH  
V
=10V  
GS  
4.0  
5.0  
6.0  
7.0 8.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
V
, Gate-to-Source Voltage (V)  
GS  
T , Junction Temperature ( C)  
J
Fig 4. Normalized On-Resistance  
Fig 3. Typical Transfer Characteristics  
Vs.Temperature  
www.irf.com  
3
IRF5N3205  
20  
16  
12  
8
8000  
6000  
4000  
2000  
I
D
= 55A  
V
= 0V,  
f = 1MHz  
gd , ds  
GS  
C
= C + C  
gs  
C
SHORTED  
iss  
V
V
V
= 44V  
= 27V  
= 11V  
DS  
DS  
DS  
C
= C  
gd  
= C + C  
ds  
rss  
C
oss  
gd  
C
iss  
C
oss  
4
C
rss  
FOR TEST CIRCUIT  
SEE FIGURE 13  
0
1
0
10  
100  
0
40  
80  
120  
160  
200  
V
, Drain-to-Source Voltage (V)  
Q
, Total Gate Charge (nC)  
DS  
G
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-SourceVoltage  
Gate-to-SourceVoltage  
1000  
1000  
100  
10  
OPERATION IN THIS AREA  
LIMITED BY R (on)  
DS  
°
T = 150 C  
J
100  
10  
1
100µs  
°
T = 25 C  
1ms  
J
1
Tc = 25°C  
Tj = 150°C  
Single Pulse  
10ms  
V
= 0 V  
GS  
0.1  
0.4  
0.8  
1.2  
1.6  
1
10  
100  
V
,Source-to-Drain Voltage (V)  
SD  
V
, Drain-toSource Voltage (V)  
DS  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
ForwardVoltage  
4
www.irf.com  
IRF5N3205  
RD  
100  
80  
60  
40  
20  
0
VDS  
LIMITED BY PACKAGE  
VGS  
D.U.T.  
RG  
+VDD  
-
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
75  
100  
125  
150  
°
, Case Temperature ( C)  
T
C
10%  
V
GS  
Fig 9. Maximum Drain Current Vs.  
t
t
r
t
t
f
d(on)  
d(off)  
CaseTemperature  
Fig 10b. Switching Time Waveforms  
10  
1
D = 0.50  
0.20  
0.10  
P
2
DM  
0.1  
t
0.05  
1
t
SINGLE PULSE  
(THERMAL RESPONSE)  
0.02  
0.01  
2
Notes:  
1. Duty factor D = t / t  
1
2. Peak T =P  
x Z  
+ T  
C
J
DM  
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRF5N3205  
250  
200  
150  
100  
50  
I
D
TOP  
24.6A  
35A  
BOTTOM 55A  
15V  
DRIVER  
+
L
V
DS  
.
D.U.T  
R
G
V
DD  
-
I
A
AS  
VGS  
2
0.01  
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit  
0
25  
50  
75  
100  
125  
150  
V
°
(BR)DSS  
Starting T , Junction Temperature ( C)  
J
t
p
Fig 12c. Maximum Avalanche Energy  
Vs. DrainCurrent  
I
AS  
Current Regulator  
Same Type as D.U.T.  
Fig 12b. Unclamped Inductive Waveforms  
50KΩ  
.2µF  
12V  
.3µF  
Q
G
+
V
10V  
DS  
D.U.T.  
-
Q
Q
GD  
GS  
V
GS  
V
3mA  
G
I
I
D
G
Current Sampling Resistors  
Charge  
Fig 13b. Gate Charge Test Circuit  
Fig 13a. Basic Gate Charge Waveform  
6
www.irf.com  
IRF5N3205  
Footnotes:  
 Repetitive Rating; Pulse width limited by  
ƒ I  
SD  
≤ 55A, di/dt ≤ 217A/µs,  
≤ 55V, T ≤ 150°C  
maximum junction temperature.  
V
DD  
J
‚ V  
= 25 V, Starting T = 25°C, L= 0.09mH  
DD  
Peak I  
J
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  
= 55A, V  
= 10V, R = 25Ω  
G
AS  
GS  
Case Outline and Dimensions — SMD-1  
PAD ASSIGNMENTS  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.  
Data and specifications subject to change without notice. 05/2005  
www.irf.com  
7

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