IRF611-011PBF
更新时间：2024-09-18 17:15:41
品牌：INFINEON
描述：Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
概述
数据手册IRF611-011PBF 概述
Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRF611-011PBF 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| IRF611-013 | INFINEON | Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 获取价格 |
|
| IRF611-013PBF | INFINEON | Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 获取价格 |
|
| IRF611R | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.3A I(D) | TO-220AB | 获取价格 |
|
| IRF612 | FAIRCHILD | N-Channel Power MOSFETs, 3.5A, 150-200V | 获取价格 |
|
| IRF612 | NJSEMI | Trans MOSFET N-CH 200V 2A 3-Pin(3+Tab) TO-220AB | 获取价格 |
|
| IRF612-001 | INFINEON | Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 获取价格 |
|
| IRF612-001PBF | INFINEON | Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 获取价格 |
|
| IRF612-002 | INFINEON | Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 获取价格 |
|
| IRF612-002PBF | INFINEON | Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 获取价格 |
|
| IRF612-003 | INFINEON | Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 获取价格 |
|
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