IRF612-013 [INFINEON]
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;型号: | IRF612-013 |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 局域网 脉冲 晶体管 |
文件: | 总1页 (文件大小:42K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRF612-013PBF
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF613
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON
IRF613-001
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF613-001PBF
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF613-002
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF613-002PBF
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF613-003PBF
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF613-004
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF613-005
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF613-005PBF
Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
©2020 ICPDF网 联系我们和版权申明