IRF614SPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF614SPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：1719K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95984
IRF614SPbF
Lead-Free
www.irf.com
1
12/21/04
IRF614SPbF
2
www.irf.com
IRF614SPbF
www.irf.com
3
IRF614SPbF
4
www.irf.com
IRF614SPbF
www.irf.com
5
IRF614SPbF
6
www.irf.com
IRF614SPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14 For N Channel HEXFETS
www.irf.com
7
IRF614SPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
AS S EMBLED ON WW 02, 2000
IN THE ASSEMBLYLINE "L"
F530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
Note: "P" in as sembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB LY
LOT CODE
WE EK 02
A = ASSEMBLYSITE CODE
8
www.irf.com
IRF614SPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/04
www.irf.com
9
相关型号：
IRF614STRLPBF
TRANSISTOR 2.7 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
VISHAY
IRF614STRRPBF
Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
VISHAY
IRF615-001
Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF615-001PBF
Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF615-002
Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF615-002PBF
Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF615-003
Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF615-003PBF
Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRF615-004
Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF615-005
Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRF615-005PBF
Power Field-Effect Transistor, 2.2A I(D), 250V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
©2020 ICPDF网 联系我们和版权申明