IRF6156PBF [INFINEON]
Power Field-Effect Transistor, 20V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLIPFET-6;
| 型号： | IRF6156PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 20V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLIPFET-6 晶体 晶体管 功率场效应晶体管 开关 |
| 文件： | 总13页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94592A
IRF6156
l Ultra Low RSS(on) per Footprint Area
FlipFET Power MOSFET
l Low Thermal Resistance
l Bi-Directional N-Channel Switch
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
VSS
20V
RSS(on) max
40m @VGS1,2 = 4.5V
IS
±6.5
60m @VGS1,2 = 2.5V
±5.2
l ESD Protection Diode
Description
True chip-scale packaging is available from International Recti-
fier. Through the use of advanced processing techniques and a
unique packaging concept, extremely low on-resistance and the
highestpowerdensitiesintheindustryhavebeenmadeavailable
for battery and load management applications. These benefits,
combined with the ruggedized device design that International
Rectifier is well known for, provide the designer with an
extremely efficient and reliable device.
TheFlipFET package, isone-fifththefootprintofacomparable
TSSOP-8 package and has a profile of less than .8mm. Com-
bined with the low thermal resistance of the die level device, this
makes the FlipFET the best device for applications where
printed circuit board space is at a premium and in extremely thin
application environments such as battery packs, mobile phones
and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Max.
20
Units
VSS
Source-to-Source Voltage
Continuous Current, VGS1 = VGS2 = 4.5V
Continuous Current, VGS1 = VGS2 = 4.5V
Pulsed Current
V
IS @ TA = 25°C
IS @ TA = 70°C
ISM
±6.5
±5.2
33
A
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
2.5
W
D
D
Power Dissipation
1.6
Linear Derating Factor
Gate-to-Source Voltage
20
mW/°C
V
V
T
±12
GS
Operating Junction and
-55 to + 150
°C
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Ambient
Typ.
–––
35
Max.
50
Units
RθJA
°C/W
RθJ-PCB
Junction-to-PCB
–––
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1
09/25/03
IRF6156
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)SSS
V
GS=0V, IS=250µA,See Fig. 23a&b
Source-to-Source Breakdown Voltage 20 ––– –––
V
Fig.23a&b
∆V(BR)SSS/∆TJ
RSS(on)
Reference to 25°C,IS=1mA,
––– mV/°C
Breakdown Voltage Temp. Coefficient ––– 16
Static Source-to-Source On-Resistance ––– 27
––– 43
Ω
m
V
GS1,2 = 4.5V, IS = 6.5A Fig.11a&b
VGS1,2 = 2.5V, IS = 5.2A
SS = VGS, IS = 250µA Fig. 10a&b
VSS = 10V, IS = 6.5A, See Fig. 4
SS = 20V, VGS = 0V,See Fig.23a&b
VSS = 16V, VGS = 0V, TJ = 125°C
SS = 4.5V, VGS = 0V, TJ = 25°C
40
60
VGS(th)
gfs
V
Gate Threshold Voltage
0.45 ––– 1.2
18 ––– –––
––– ––– 1.0
V
Forward Transconductance
S
V
µA
ISSS
Zero Gate Voltage Source Current
––– –––
––– 50
25
V
–––
nA
µA
µA
VSS = 4.5V, VGS = 0V, TJ = 60°C
VGS = 12V, See Fig. 22
VGS = -12V
––– 100 –––
––– 8.0 20
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
––– -8.0 -20
––– 0.20 0.5
––– -0.20 -0.5
V
GS = 4.5V
VGS = -4.5V
Qg
IS = 6.5A
––– 12
––– 1.6
––– 4.4
18
2.4
6.6
Qgs
QG1-S2
td(on)
tr
VSS = 16V
Gate-to-Source Charge
Miller Charge
nC
ns
VGS = 5.0V, See Fig. 14a,b&c
VSS = 10V
Turn-On Delay Time
––– 8.0 –––
IS = 1.0A
Rise Time
––– 13
––– 33
––– 26
–––
–––
–––
td(off)
tf
RG = 3.0Ω
Turn-Off Delay Time
VGS = 5.0V, See Fig. 21a,b&c
VGS = 0V
Fall Time
Ciss
Coss
Crss
Vssf
Input Capacitance
––– 950 –––
––– 210 –––
––– 150 –––
––– ––– 1.2
VSS = 15V
Output Capacitance
pF
V
Reverse Transfer Capacitance
Source-to-Source Diode Forward
Voltage, One Device On
ƒ = 1.0KHz, See Fig. 13a,b,c,d,e&f
See Fig. 17a&b
Iss = 2.5A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Gate voltage applied to both gates.
When mounted on 1 inch square 2oz copper on FR-4.
Figures 1, 2 and 3: One Fet is biased with VGS = 9.0V and curves show response of the second FET.
See Fig.4.
ꢀ Figures 5, 6 and 7: G1 and G2 are shorted. See Fig.9a&b.
The diode connected between the gate and source serves only as protection against ESD.
No gate over voltage rating is implied.
2
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IRF6156
100
10
1
100
10
VGS
VGS
7.0V
5.0V
4.5V
2.5V
1.8V
1.5V
1.2V
1.0V
TOP
7.0V
5.0V
4.5V
2.5V
1.8V
1.5V
1.2V
1.0V
TOP
BOTTOM
BOTTOM
1
1.0V
1.0V
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Source-to-Source Voltage (V)
V
, Source-to-Source Voltage (V)
SS
SS
Fig 2. Typical Output Characteristics.
Fig 1. Typical Output Characteristics.
100.00
10.00
1.00
S2
-
Q2
9V
+
T
= 25°C
J
G2
G1
+
-
T
= 150°C
J
VSS
Q1
S1
V
= 15V
SS
20µs PULSE WIDTH
1.0
1.5
2.0 2.5
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics.
Fig 4. Output and Transfer Test Circuit.
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3
IRF6156
60
50
40
30
20
1200
1000
800
600
400
200
0
V
= 2.5V
GS
V
GS
= 4.5V
I
= 6.5A
4.0
D
0
5
10
15
20
25
30
35
1.0
2.0
3.0
5.0
6.0
7.0
V
Gate -to -Source Voltage (V)
I
, Source Current (A)
GS,
S
Fig 6. Typical On-Resistance vs. Source
Current. ꢀ
Fig 5. Typical On-Resistance vs. Gate
Voltage. ꢀ
100000
10
9
8
7
6
5
4
3
2
1
0
10000
1000
100
10
T
= 150°C
J
1
T
= 25°C
15
J
0.1
0.01
0
5
10
20
25
0
5
10
15
20
V
, Gate-to-Source Voltage (V)
V
, Gate-to-Source Voltage (V)
GS
GS
Fig 7a. Gate-Current vs. Gate-Source
Fig 7b. Gate-Current vs. Gate-Source
Voltage
Voltage
4
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IRF6156
7
6
5
4
3
2
1
0
2.0
1.5
1.0
0.5
I
= 6.5A
D
V
= 4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
T
75
100
125
150
T
J
, Junction Temperature (°C)
, Case Temperature (°C)
C
Fig 8. Normalized On-Resistance
vs. Temperature. ꢀ
Fig 9. Maximum Source Current vs.
Case Temperature.
To Drain
To Drain
S1
Q1
S2
Q2
G2
Q1
G1
Q2
G1
S1
G2
S2
To Source
To Source
Fig 10b. VGS(th) is symmetrical and
can be measured when connected
as shown on figure 10b.
Fig 10a. VGS(th) is symmetrical and
can be measured when connected
as shown on figure 10a.
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5
IRF6156
-
-
S2
S1
2.5V
4.5V
2.5V
4.5V
Q2
Q1
+
+
G2
G1
Q2
Q1
G1
G2
S1
S2
Fig 11a
Fig 11b
RSS(on) is symmetrical and can be measured when connected as shown
in either figures 11a or 11b.
10000
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
1000
Coss
Crss
100
0
5
10
15
20
V
, Source-to-Source Voltage (V)
SS
Fig 12. Typical Capacitance vs.
Source-to-Source Voltage.
6
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IRF6156
33K
-
Low
Capacitance
33K
4.5V
S2
+
10MΩ
S2
Bridge
-
G2
G1
High
G2
G1
16V
+
-
1µF
1µF
1µF
1µF
16V
+
High
+
-
Capacitance
Bridge
S1
S1
4.5V
10MΩ
33K
Low
33K
Fig 13b
Fig 13a
Ciss capacitance is symmetrical and can be measured as shown either in figures 13a or 13b.
-
33K
4.5V
+
H
S2
33K
S2
+
Capacitance
Bridge
16V
G2
G1
L
1µF
G2
G1
Capacitance
Bridge
1µF
-
L
-
H
16V
+
S1
S1
+
33K
4.5V
33K
-
Fig 13c
Fig 13d
Coss capacitance is symmetrical and can be measured as shown either in figures 13c or 13d.
-
33K
4.5V
+
Common
33K
S2
+
S2
16V
G2
G1
L
H
Capacitance
Bridge
-
G2
G1
1µF
Capacitance
Bridge
1µF
H
-
L
16V
S1
+
S1
33K
+
-
Common
4.5V
33K
Fig 13f
Fig 13e
Crss capacitance is symmetrical and can be measured as shown either in figures 13e or 13f.
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7
IRF6156
6.0
I
= 6.5A
D
5.0
4.0
3.0
2.0
1.0
0.0
V
V
= 16V
= 10V
DS
DS
Q
G
Q
Q
GD
QG1-S2
GS
V
G
Charge
0
2
4
6
8
10
12
14
Q
Total Gate Charge (nC)
G
Fig 14. Typical Gate Charge vs.
Fig 14a. Basic Gate Charge Waveform.
Gate-to-Source Voltage.
Current Regulator
-
Current Regulator
S2
4.5
+
V
S2
.5µF
G2
G1
-
2µF
12V
+
G2
G1
50K
+
-
50K
2µ
F
12V
.5µF
+
-
+
-
+
-
S1
S2
4.5
16V
V
16V
S1
S2
-
I
I
G
D
4.5V
+
3mA
G2
G1
G2
G1
+
S1
4.5V
3mA
S1
-
I
I
D
G
Fig 14b
Fig 14c
Gate Charge is symmetrical and can be measured as shown in either figures 14b or 14c.
8
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IRF6156
100.00
10.00
1.00
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
SS
100µsec
T
= 150°C
J
1msec
10msec
T
= 25°C
A
T
= 25°C
J
Tj = 150°C
V
= 0V
GS
Single Pulse
0.10
0.1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
, Source-to-Source Voltage (V)
100
V
, Source-to-Source Diode Forward Voltage (V)
V
ssf
SS
Fig 15. Maximum Safe Operating
Fig 16. Typical Source-Source Diode
Forward Voltage.
Area.
(See Fig.17a&b for Connection)
(-VS)
(-VS)
To Drain
To Drain
-
-
S1
S2
Q1
Q2
4.5V
4.5V
+
+
G1
Q2
G2
Q1
G2
G1
S2
S1
To Source
To Source
Fig 17a
Fig 17b
Vssf is symmetrical and can be measured when connected as shown
either in figures 17a or 17b.
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9
IRF6156
50
40
30
20
10
1.0
0.8
0.6
0.4
0.2
0.0
I
= 250µA
D
0
1.00
10.00
100.00
1000.00
-75 -50 -25
0
25
50
75 100 125 150
Time (sec)
T
, Temperature ( °C )
J
Fig 18. Typical Power vs. Time.
Fig 19. Threshold Voltage vs. Temperature.
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
DM
t
1
t
2
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D =
t
/ t
1 2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 20. Typical Effective Transient Thermal Impedance, Junction-to-Ambient.
10
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IRF6156
R
= 10ohm
4.5V
S
S2
S2
6ohm
V
G2
G1
+
-
-
GS
10V
V
G2
G1
GS
10V
6ohm
+
S1
S1
R
= 10ohm
4.5V
S
Fig 21b
Fig 21a
Switching times are symmetrical and can be measured as shown
in either figures 21a or 21b.
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
90%
V
DS
Fig 21c. Switching Time Waveforms.
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11
IRF6156
S1
S2
Q1
Q2
G2
G1
Q2
Q1
G1
G2
S1
S2
Fig 22b
Fig 22a
IGSS Test Connection
S2
S1
Q1
Q2
G2
Q1
G1
Q2
G1
G2
S1
S2
Fig 23a
Fig 23b
ISSS and V(BR)SSS are symmetrical and can be measured when connected
either as figures 23a or 23b.
12
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IRF6156
Bi-Directional MOSFET Pinout Outline Dimension and Tape and Reel Information
Drawing No. 01-0115
A1 B AL L
LOCATIONMARK
NOT ES:
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
PART NUMBER
LOT NUMBER
DATE CODE
2. CONTROLLINGDIMENSION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
0.10 [.004]
C
0.05 [.002]
C
1.524
[.060]
0.280 [.0110]
0.240 [.0094]
A
B
C
0.10 [.004]
C
PADASSIGNMENTS
A1 = G1
A2 = G2
B1= S1
B2= S2
C1 = S 1
C2 = S 2
0.80
[.032]
2X
2.324
[.092]
0.537 [.0211]
0.507 [.0199]
0.388 [.0153]
0.338 [.0133]
6X Ø
0.812 [.032]
0.752 [.029]
0.15 [.006]
0.08 [.003]
C A B
C
0.20 [.008]
C
0.800 [.032]
Gate 1
A1
Gate 2
A2
Ø 13"
0.800 [.032]
2x
S ource 1
B1
S ource 2
B2
S ource 1
C1
S ource 2
C2
12mm
6X Ø 0.25 [.010]
A1 B AL L
LOCAT ION
RECOMMENDED FOOTPRINT
12mm
FEED DIRECT ION
4mm
NOT ES:
1. T APE AND REEL OUT LINE CONF ORMS T O EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/03
www.irf.com
13
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