IRF6218 [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRF6218 |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总7页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95862
SMPS MOSFET
IRF6218
HEXFET® Power MOSFET
Applications
l Reset Switch for Active Clamp
VDSS
RDS(on) max
ID
150m @VGS = -10V
-150V
-27A
Reset DC-DC converters
Benefits
D
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
G
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
S
Absolute Maximum Ratings
Parameter
Max.
-150
± 20
-27
Units
VDS
VGS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
I
I
I
@ T = 25°C
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
D
D
C
@ T = 100°C
C
-19
-110
250
DM
P
@T = 25°C
C
W
Maximum Power Dissipation
D
Linear Derating Factor
1.6
W/°C
dv/dt
T
J
Peak Diode Recovery dv/dt
Operating Junction and
8.2
V/ns
°C
-55 to + 175
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.61
–––
62
Units
Rθ
°C/W
JC
CS
JA
Junction-to-Case
Rθ
Rθ
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Notes through are on page 7
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1
04/22/04
IRF6218
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-150 ––– –––
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
V
Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
-3.0
–––
–––
–––
–––
120
–––
–––
150
-5.0
-25
V
GS = -10V, ID = -16A
VDS = VGS, ID = -250µA
DS = -120V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
GS = -20V
VGS = 20V
mΩ
V
VGS(th)
IDSS
Drain-to-Source Leakage Current
µA
V
––– -250
––– -100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
–––
100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = -50V, ID = -16A
gfs
11
–––
71
21
32
21
70
35
30
–––
110
–––
–––
–––
–––
–––
–––
S
Qg
–––
–––
–––
–––
–––
–––
–––
ID = -16A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -120V
VGS = -10V
VDD = -75V
ns ID = -16A
RG = 3.9Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
VGS = -10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 2210 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
370
89
–––
–––
V
DS = -25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz
––– 2220 –––
–––
–––
170
340
–––
–––
VGS = 0V, VDS = -120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to -120V
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
210
-16
Units
mJ
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
I
D
Continuous Source Current
–––
–––
-27
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
––– -110
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
150
860
-1.6
–––
–––
V
T = 25°C, I = -16A, V = 0V
J S GS
SD
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = -16A, VDD = -25V
J F
rr
di/dt = -100A/µs
Q
nC
rr
2
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IRF6218
1000
100
10
1000
100
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
TOP
BOTTOM
BOTTOM
1
-4.5V
-4.5V
1
0.1
0.01
60µs PULSE WIDTH
Tj = 175°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
I
= -27A
D
V
= -10V
GS
T
= 25°C
J
2.0
1.5
1.0
0.5
T
= 175°C
J
10
V
= 50V
DS
≤
60µs PULSE WIDTH
1.0
2
4
6
8
10 12
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
, Junction Temperature (°C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRF6218
100000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = -16A
D
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
V
= 120V
= 75V
= 30V
DS
DS
DS
C
= C
rss
gd
= C + C
C
oss
ds
gd
10000
1000
100
C
C
iss
6.0
oss
4.0
C
rss
2.0
10
0.0
1
10
100
0
10 20 30 40 50 60 70 80
Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
Q
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000.00
100.00
10.00
1.00
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
V
= 0V
10msec
GS
1
0.10
1
10
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-V , Drain-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF6218
30
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
10%
Fig 9. Maximum Drain Current vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
Cτ
0.264
0.206
0.140
0.000285
0.001867
0.013518
τ
1τ1
τ
0.02
0.01
2 τ2
3τ3
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF6218
400
350
300
250
200
150
1000
900
800
700
600
500
400
300
200
100
0
V
= -10V
GS
I
= -27A
D
100
0
4
5
6
7
8
9
10
11
12
20
40
60
80
-I , Drain Current (A)
-V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
-VGS
50KΩ
.3µF
.2µF
12V
Q
Q
GD
GS
900
-
V
+
DS
V
D.U.T.
G
I
D
800
V
GS
TOP
-4.6A
-6.3A
Charge
-3mA
700
600
500
400
300
200
100
0
I
I
BOTTOM -16A
G
D
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
A
I
AS
DRIVER
-20V
0.01
t
Ω
p
25
50
75
100
125
150
175
t
p
15V
V
(BR)DSS
Starting T , Junction Temperature (°C)
J
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
vs. Drain Current
and Waveforms
6
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IRF6218
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
- B -
3.78 (.149)
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
PART NUMBER
LOT CODE 9B1M
IRF1010
9246
LOGO
9B 1M
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW = WEEK
Notes:
ISD ≤ -17A, di/dt ≤ -520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction
temperature.
Starting TJ = 25°C, L = 1.6mH, RG = 25Ω, IAS = -17A.
ꢀ R is measured at TJ of approximately 90°C.
q
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/04
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7
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