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IRF631-010_技术文档

IRF631-010 [INFINEON]

Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
IRF631-010
型号: IRF631-010
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

文件: 总1页 (文件大小:42K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

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