IRF635-011 [INFINEON]

Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;

IRF635-011


型号：	IRF635-011
厂家：	Infineon
描述：	Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
文件：	总1页 (文件大小：42K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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