IRF644FPBF [INFINEON]
Power Field-Effect Transistor, 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB;型号: | IRF644FPBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
文件: | 总11页 (文件大小:325K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRF644FXPBF
Power Field-Effect Transistor, 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
IRF644NLPBF
Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
INFINEON
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