IRF6613TR1PBF [INFINEON]
Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3;
| 型号： | IRF6613TR1PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 瞄准线 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95881B
IRF6613
HEXFET® Power MOSFET
l Application Specific MOSFETs
l Ideal for Synchronous Rectification in Isolated
DC-DC Converters
VDSS
40V
RDS(on) max
3.4mΩ@VGS = 10V
4.1mΩ@VGS = 4.5V
Qg(typ.)
42nC
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunity for synchro-
nous FET applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VDS
40
Drain-to-Source Voltage
V
±20
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
150
I
I
I
I
@ TC = 25°C
D
D
D
23
@ TA = 25°C
@ TA = 70°C
A
18
180
DM
89
P
P
P
@TC = 25°C
@TA = 25°C
@TA = 70°C
Power Dissipation
D
D
D
2.8
Power Dissipation
1.8
Power Dissipation
W
mJ
A
EAS
IAR
200
Single Pulse Avalanche Energy
Avalanche Current
18
0.022
-40 to + 150
Linear Derating Factor
W/°C
°C
T
T
Operating Junction and
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJA
–––
–––
1.4
RθJA
°C/W
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
–––
Notes through are on page 2
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1
9/30/05
IRF6613
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
–––
1.35
–––
–––
–––
–––
–––
93
–––
–––
V
∆ΒVDSS/∆TJ
RDS(on)
38
––– mV/°C Reference to 25°C, ID = 1mA
mΩ
2.6
3.1
–––
-5.8
–––
–––
–––
–––
–––
42
3.4
4.1
V
GS = 10V, ID = 23A e
VGS = 4.5V, ID = 18A e
DS = VGS, ID = 250µA
VGS(th)
Gate Threshold Voltage
2.25
V
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
-100
–––
63
µA VDS = 32V, VGS = 0V
V
V
V
DS = 32V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
GS = 20V
GS = -20V
gfs
VDS = 15V, ID = 18A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
11.5
3.3
12.6
14.6
15.9
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 20V
nC
VGS = 4.5V
ID = 18A
See Fig. 6 and 16
nC VDS = 16V, VGS = 0V
DD = 16V, VGS = 4.5Vꢁe
Turn-On Delay Time
18
V
Rise Time
47
ID = 18A
td(off)
tf
Turn-Off Delay Time
27
ns Clamped Inductive Load
Fall Time
4.9
Ciss
Coss
Crss
Input Capacitance
––– 5950 –––
VGS = 0V
Output Capacitance
–––
–––
990
460
–––
–––
pF
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
–––
–––
110
MOSFET symbol
(Body Diode)
A
showing the
G
ISM
Pulsed Source Current
–––
–––
180
integral reverse
(Body Diode)ꢁc
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
38
1.0
57
63
V
TJ = 25°C, IS = 18A, VGS = 0V e
Reverse Recovery Time
Reverse Recovery Charge
ns TJ = 25°C, IF = 18A
di/dt = 100A/µs e
nC
Qrr
42
Notes:
ꢀ Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of
part.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.2mH,
RG = 25Ω, IAS = 18A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
R is measured at TJ of approximately 90°C.
θ
2
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IRF6613
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
2.7V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
2.0
1.5
1.0
0.5
I
= 23A
D
V
= 10V
GS
100.0
10.0
1.0
T
= 150°C
J
T
= 25°C
= 15V
J
V
DS
≤ 60µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
12
V
C
= 0V,
f = 1 MHZ
GS
I = 18A
= C + C , C SHORTED
D
V
= 32V
iss
gs
gd ds
DS
VDS= 20V
C
= C
10
8
rss
gd
C
= C + C
ds
oss
gd
Ciss
6
Coss
Crss
4
2
0
100
0
20
40
60
80
100
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF6613
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100.0
T
= 150°C
J
100µsec
10.0
1.0
1
T
= 25°C
J
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
V
= 0V
GS
10msec
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
0
1
10
100
1000
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
150
2.5
2.0
1.5
1.0
0.5
120
90
60
30
0
I
= 250µA
D
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
T
, Temperature ( °C )
J
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1
0.6784
17.299
17.566
9.4701
0.00086
0.57756
8.94
τ
τ
J τJ
τ
A
τ
τ
τ
1τ1
τ
τ
2τ2
3τ3
4τ4
0.01
0.001
0.0001
Ci= τi/Ri
106
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF6613
1000
800
600
400
200
0
7.0
6.0
5.0
4.0
3.0
2.0
I
I
= 23A
D
D
TOP
6.7A
8.1A
18A
BOTTOM
T
T
= 125°C
J
= 25°C
8.0
J
2.0
4.0
6.0
10.0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy Vs. Drain Current
15V
LD
VDS
DRIVER
+
L
V
DS
+
-
VDD
D.U.T
AS
R
G
V
DD
-
D.U.T
I
A
V
GS
VGS
0.01Ω
t
p
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 13a. Unclamped Inductive Test Circuit
Fig 14a. Switching Time Test Circuit
VDS
V
(BR)DSS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 14b. Switching Time Waveforms
Fig 13b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
Vgs(th)
3mA
I
I
D
G
Current Sampling Resistors
Qgs1
Qgs2
Qgd
Qgodr
Fig 15. Gate Charge Test Circuit
Fig 16. Gate Charge Waveform
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5
IRF6613
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
V
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Re-Applied
Voltage
RG
+
-
Body Diode
Inductor Current
Forward Drop
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
6
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IRF6613
DirectFET Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX
MIN
CODE MIN
MAX
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.028
0.003
0.007
6.35
5.05
A
B
C
D
E
F
0.246
0.189
6.25
4.80
3.85
0.35
0.78
0.88
1.78
0.98
0.63
0.88
2.46
0.59
0.03
0.08
NOTE: CONTROLLING
DIMENSIONS ARE IN MM
3.95 0.152
0.45 0.014
0.82
0.92
1.82
1.02
0.67
0.031
0.035
0.070
0.039
0.025
G
H
J
1.01 0.035
2.63 0.097
K
L
0.70
0.08
0.17
M
N
P
0.023
0.001
0.003
DirectFET Part Marking
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7
IRF6613
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6613). For 1000 parts on 7" reel,
order IRF6613TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN
MAX
IMPERIAL
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.9/05
8
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