IRF6637 [INFINEON]
DirectFETPower MOSFET; DirectFETPower MOSFET型号: | IRF6637 |
厂家: | Infineon |
描述: | DirectFETPower MOSFET |
文件: | 总9页 (文件大小:263K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 96968
IRF6637
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l Lead and Bromide Free
VDSS
VGS
RDS(on)
RDS(on)
l Low Profile (<0.7 mm)
5.7mΩ@ 10V 8.2mΩ@ 4.5V
30V max ±20V max
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC
4.0nC 1.0nC
20nC
9.9nC
1.8V
l Optimized for both Sync.FET and some Control FET
application
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
MP
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6637 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6637 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6637 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Max.
30
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
14
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
11
@ TA = 70°C
@ TC = 25°C
A
59
110
31
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
11
25
20
15
10
5
12
10
8
I = 11A
D
I
= 14A
V
= 24V
D
DS
VDS= 15V
6
T
= 125°C
J
4
2
T
= 25°C
J
0
2.0
4.0
6.0
8.0
10.0
0
4
8
12
16
20
24
V
, Gate-to-Source Voltage (V)
GS
Fig 1. Typical On-Resistance Vs. Gate Voltage
Q
Total Gate Charge (nC)
G
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.52mH, RG = 25Ω, IAS = 11A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
2/15/05
IRF6637
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
38
–––
26
–––
V
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
D
VGS = 10V, ID = 14A c
VGS = 4.5V, ID = 11A c
VDS = VGS, ID = 250µA
mΩ
5.7
8.2
1.8
-5.4
–––
–––
–––
–––
–––
11
7.7
10.8
2.35
VGS(th)
Gate Threshold Voltage
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
V
V
V
V
DS = 24V, VGS = 0V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
1.0
150
100
-100
–––
17
µA
nA
S
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
GS = -20V
VDS = 15V, ID = 11A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS = 15V
GS = 4.5V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
3.1
1.0
4.0
2.9
5.0
9.9
1.2
12
–––
–––
6.0
V
nC
ID = 11A
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 15
VDS = 16V, VGS = 0V
nC
Ω
Gate Resistance
VDD = 16V, VGS = 4.5Vꢁc
ID = 11A
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
15
Clamped Inductive Load
Turn-Off Delay Time
14
ns
Fall Time
3.8
V
GS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1330 –––
VDS = 15V
Output Capacitance
–––
–––
430
150
–––
–––
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
MOSFET symbol
Continuous Source Current
(Body Diode)
–––
–––
2.9
showing the
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)ꢁd
–––
–––
110
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V c
TJ = 25°C, IF = 11A
di/dt = 500A/µs c
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
13
1.0
20
30
V
ns
nC
Qrr
20
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
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IRF6637
Absolute Maximum Ratings
Max.
Parameter
Units
2.3
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
W
D
D
D
P
J
1.5
89
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
55
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJA
–––
–––
3.0
RθJA
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.018
100
10
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
R5
Ri (°C/W) τi (sec)
R5
0.02
0.01
τ
τ
J τJ
τ
0.6676
1.0462
1.5611
29.282
25.455
0.000066
0.000896
0.004386
0.68618
32
Cτ
1
τ
1 τ1
τ
τ
τ
2τ2
3τ3
4τ4
5τ5
Ci= τi/Ri
Ci= τi/Ri
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
TC measured with thermocouple incontact with top (Drain) of part.
Surface mounted on 1 in. square Cu board, steady state.
ꢀ R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
board (still air).
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IRF6637
1000
100
10
1000
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
1
BOTTOM
BOTTOM
2.5V
1
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
2.5V
Tj = 150°C
Tj = 25°C
1
0.1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
V
= 15V
DS
≤60µs PULSE WIDTH
I
= 14A
D
VGS = 4.5V
= 10V
V
GS
T
T
T
= 150°C
= 25°C
= 40°C
J
J
J
1
0.1
1.5
2.0
2.5
3.0
3.5
4.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
10000
1000
100
20
V
C
= 0V,
f = 1 MHZ
GS
T
= 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
J
= C + C , C SHORTED
iss
gs
gd ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
16
12
8
C
iss
C
oss
C
rss
4
0
20
40
60
80
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
D
Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
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IRF6637
1000
100
10
1000.0
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
100µsec
1msec
10msec
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.1
0.10
1.00
10.00
100.00
0.2
0.4
0.6
0.8
1.2
V
, Drain-toSource Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
60
50
40
30
20
10
0
I
= 250µA
D
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T
, Junction Temperature ( °C )
J
T
, Case Temperature (°C)
C
Fig 13. Typical Threshold Voltage vs. Junction
Fig 12. Maximum Drain Current vs. Case Temperature
Temperature
160
I
D
TOP
BOTTOM
4.9A
7.5A
11A
120
80
40
0
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy Vs. Drain Current
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5
IRF6637
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
VGS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
I
AS
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
td(on)
td(off)
tr
Pulse Width < 1µs
Duty Factor < 0.1%
tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6637
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MP Outline
(Medium Size Can, P-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G- Gate
D- Drain
S- Source
D
D
D
D
S
S
G
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7
IRF6637
DirectFET Outline Dimension, MP Outline
(Medium Size Can, P-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
CODE
MAX
MAX
MIN
6.25
4.80
3.85
0.35
0.58
0.58
0.75
0.53
0.63
1.59
2.87
0.59
0.03
0.08
MAX
0.250
0.199
0.156
0.018
0.032
0.032
0.031
0.022
0.026
0.068
0.119
0.028
0.003
0.007
NOTE: CONTROLLING
DIMENSIONS ARE IN MM
A
B
C
D
E
F
6.35
5.05
3.95
0.45
0.62
0.62
0.79
0.57
0.67
1.72
3.04
0.70
0.08
0.17
0.246
1.889
0.152
0.014
0.023
0.023
0.030
0.021
0.025
0.063
0.113
0.023
0.001
0.003
G
H
J
K
L
M
N
P
DirectFET Part Marking
8
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IRF6637
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6637). For 1000 parts on 7" reel,
order IRF6637TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN MAX
IMPERIAL
CODE
MIN
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/05
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9
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IRF6643
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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