IRF6674PBF [INFINEON]
DirectFETPower MOSFET; ??的DirectFET功率MOSFET型号: | IRF6674PBF |
厂家: | Infineon |
描述: | DirectFETPower MOSFET |
文件: | 总9页 (文件大小:251K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97133
IRF6674TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHS Compliant
VDSS
VGS
RDS(on)
9.0mΩ@ 10V
Vgs(th)
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
60V max ±20V max
Qg tot
Qgd
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
24nC
8.3nC
4.0V
l Low Conduction Losses
l High Cdv/dt Immunity
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
Description
The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application noteAN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6674PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input
voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-
DC converters.
Absolute Maximum Ratings
Max.
60
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
13.4
10.7
67
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
A
@ TA = 70°C
@ TC = 25°C
134
98
DM
EAS
IAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
13.4
14
12
10
8
50
40
30
20
10
0
I = 13.4A
D
V
= 48V
= 30V
I
= 13.4A
DS
D
V
DS
6
T
= 125°C
J
4
2
T
= 25°C
14
J
0
4
6
8
10
12
16
0
10
20
30
V
, Gate-to-Source Voltage (V)
GS
Q
Total Gate Charge (nC)
G
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.272mH, RG = 25Ω, IAS = 13.4A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
4/24/08
IRF6674TRPbF
Electrical Characteristic @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250μA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
60
–––
0.07
9.0
–––
–––
11
V
V/°C
mΩ
V
Reference to 25°C, ID = 1mA
ΔΒVDSS/ΔTJ
RDS(on)
–––
–––
3.0
VGS = 10V, ID = 13.4A i
VDS = VGS, ID = 100μA
VGS(th)
4.0
4.9
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
16
-11
–––
–––
–––
–––
–––
24
––– mV/°C
V
DS = 60V, VGS = 0V
20
250
100
-100
–––
36
μA
nA
S
VDS = 48V, VGS = 0V, TJ = 125°C
V
V
V
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
GS = -20V
DS = 25V, ID = 13.4A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS = 30V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
5.4
–––
–––
12
VGS = 10V
ID = 13.4A
See Fig. 15
1.9
nC
8.3
8.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10.2
14
VDS = 16V, VGS = 0V
nC
Gate Resistance
1.0
Ω
VDD = 30V, VGS = 10Vꢁi
td(on)
tr
td(off)
tf
Turn-On Delay Time
7.0
ID = 13.4A
Rise Time
12
RG = 6.2 Ω
Turn-Off Delay Time
12
ns
Fall Time
8.7
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
1350
390
105
1580
290
VDS = 25V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 48V, f=1.0MHz
Output Capacitance
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
MOSFET symbol
Continuous Source Current
(Body Diode) TJ= 25°C
Pulsed Source Current
(Body Diode)ꢁg
–––
–––
67
D
showing the
A
G
ISM
integral reverse
p-n junction diode.
–––
–––
134
S
TJ = 25°C, IS = 13.4A, VGS = 0V i
TJ = 25°C, IF = 13.4A, VDD = 50V
di/dt = 100A/μs c
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
32
1.3
48
54
V
ns
nC
Qrr
36
Notes:
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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IRF6674TRPbF
Absolute Maximum Ratings
Max.
Parameter
Units
3.6
Power Dissipation
Power Dissipation
Power Dissipation
W
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
D
D
D
P
J
2.3
89
270
Peak Soldering Temperature
Operating Junction and
°C
T
T
T
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
35
Units
Rθ
Rθ
Rθ
Rθ
Rθ
Junction-to-Ambient
JA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
1.4
JA
°C/W
JA
–––
1.0
JC
Junction-to-PCB Mounted
–––
J-PCB
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
R4
τι (sec)
Ri (°C/W)
R4
τJ
0.023002 0.000008
0.269754 0.000072
0.770575 0.001409
0.337715 0.005778
τC
τJ
τ1
0.02
0.01
τ
τ
τ
3τ3
τ4
2 τ2
τ1
τ4
0.01
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling, mounting pad with large heatsink.
R is measured at TJ of approximately 90°C.
θ
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
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3
IRF6674TRPbF
100
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
TOP
6.0V
BOTTOM
10
VGS
15V
TOP
10V
6.0V
8.0V
7.0V
6.0V
BOTTOM
≤60μs PULSE WIDTH
Tj = 150°C
≤60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
2.0
1.5
1.0
0.5
1000
I
= 13.4A
= 10V
D
V
GS
100
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
10
1
V
= 10V
DS
≤60μs PULSE WIDTH
0.1
2.0
4.0
6.0
8.0
10.0
12.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
100000
10000
1000
100
50
V
C
= 0V,
f = 1 MHZ
GS
T
= 25°C
A
= C + C , C SHORTED
iss
gs
gd ds
C
= C
rss
gd
40
30
20
10
0
C
= C + C
oss
ds
gd
V
V
V
V
= 7.0V
GS
GS
GS
GS
= 8.0V
= 10V
= 15V
C
iss
C
oss
C
rss
10
0
20
40
60
80
100
1
10
, Drain-to-Source Voltage (V)
100
I , Drain Current (A)
V
D
DS
Fig 9. Typical On-Resistance vs. Drain Current
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
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IRF6674TRPbF
1000
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1msec
1
T
= 25°C
10msec
C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0
0.1
1
10
100
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig11. Maximum Safe Operating Area
Fig 10. Typical Source-Drain Diode Forward Voltage
14
12
10
8
5.0
4.5
4.0
3.5
3.0
2.5
2.0
I
I
= 250μA
= 100μA
D
D
6
4
2
0
25
50
T
75
100
125
150
-75 -50 -25
0
25
, Temperature ( °C )
J
50
75 100 125 150
, Ambient Temperature (°C)
T
J
Fig 13. Typical Threshold Voltage vs.
Fig 12. Maximum Drain Current vs. Ambient Temperature
Junction Temperature
400
I
D
TOP
4.5A
9.3A
26.8A
300
200
100
0
BOTTOM
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
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5
IRF6674TRPbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
VGS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6674TRPbF
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
V***
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G=GATE
D=DRAIN
S=SOURCE
D
D
D
D
S
S
G
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
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7
IRF6674TRPbF
DirectFET Outline Dimension, MZ Outline
(Medium Size Can, Z-Designation).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.038
0.026
0.013
0.050
0.105
0.028
0.003
0.007
A
B
C
D
E
F
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.68 0.72
0.68 0.72
0.93 0.97
0.63 0.67
0.28 0.32
1.13 1.26
2.53 2.66
0.59 0.70
0.03 0.08
0.08 0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.037
0.025
0.011
0.044
0.100
0.023
0.001
0.003
G
H
J
K
L
M
N
P
DirectFET Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
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IRF6674TRPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6674MTRPBF). For 1000 parts on 7"
reel, order IRF6674MTR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
METRIC IMPERIAL
TR1 OPTION (QTY 1000)
METRIC IMPERIAL
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
MAX
N.C
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MIN
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.4/08
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9
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