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IRF7207TR [INFINEON]

Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
IRF7207TR
型号： IRF7207TR
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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中文：  中文翻译
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PD - 91879A  
IRF7207  
HEXFET® Power MOSFET  
l Generation 5 Technology  
l P-Channel Mosfet  
l Surface Mount  
A
1
2
8
D
S
S
VDSS = -20V  
7
D
l Available in Tape & Reel  
l Dynamic dv/dt Rating  
l Fast Switching  
3
4
6
S
D
5
G
D
RDS(on) = 0.06Ω  
Top View  
Description  
Fifth Generation HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance  
per silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that  
HEXFETpowerMOSFETsarewellknownfor,provides  
the designer with an extremely efficient and reliable  
device for use in a wide variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devices can be used in an application with dramatically  
reduced board space. The package is designed for  
vapor phase, infra red, or wave soldering techniques.  
Power dissipation of greater than 0.8W is possible in a  
typical PCB mount application.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
-20  
V
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
Power Dissipation  
-5.4  
-4.3  
A
-43  
PD @TC = 25°C  
PD @TC = 70°C  
2.5  
W
Power Dissipation  
1.6  
Linear Derating Factor  
0.02  
W/°C  
VGS  
Gate-to-Source Voltage  
± 12  
-16  
V
V
VGSM  
EAS  
Gate-to-Source Voltage Single Pulse tp<10µs  
Single Pulse Avalanche Energy‚  
140  
dv/dt  
TJ, TSTG  
Peak Diode Recovery dv/dt ƒ  
-5.0  
V/ns  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientꢀ  
Typ.  
–––  
Max.  
50  
Units  
°C/W  
RθJA  
www.irf.com  
1
6/5/00  
IRF7207  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
-20 ––– –––  
V
VGS = 0V, ID = -250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient  
––– -0.011 ––– V/°C Reference to 25°C, ID = -1mA  
––– ––– 0.06  
––– ––– 0.10  
-0.7 ––– –––  
8.3 ––– –––  
––– ––– -1.0  
––– ––– -25  
––– ––– -100  
––– ––– 100  
VGS = -4.5V, ID = -5.4A „  
VGS = -2.7V, ID = -2.7A „  
VDS = VGS, ID = -250µA  
VDS = -10V, ID = -5.4A  
VDS = -16V, VGS = 0V  
VDS = -16V, VGS = 0V, TJ = 125°C  
VGS = 12V  
RDS(on)  
Static Drain-to-Source On-Resistance  
Ω
VGS(th)  
gfs  
GateThresholdVoltage  
V
S
Forward Transconductance  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = -12V  
Qg  
––– 15  
22  
ID = -5.4A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
––– 2.2 3.3  
––– 5.7 8.6  
––– 11 –––  
––– 24 –––  
––– 43 –––  
––– 41 –––  
––– 780 –––  
––– 410 –––  
––– 200 –––  
nC VDS = -10V  
VGS = -4.5V, „  
VDD = -10V  
ID = -1.0A  
ns  
pF  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 6.0Ω  
RD = 10Ω, „  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
VDS = -15V  
ƒ = 1.0MHz,  
Reverse Transfer Capacitance  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
D
IS  
MOSFET symbol  
showing the  
––– ––– -3.1  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
––– ––– -43  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
––– ––– -1.0  
V
TJ = 25°C, IS = -3.1A, VGS = 0V ƒ  
TJ = 25°C, IF = -3.1A  
––– 42  
––– 50  
63  
75  
ns  
Qrr  
nC di/dt = -100A/µs ƒ  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ ISD ≤ -5.4A, di/dt ≤ -79A/µs, VDD ≤ V(BR)DSS  
,
max. junction temperature.  
TJ ≤ 150°C  
‚ Starting TJ = 25°C, L = 9.6mH  
RG = 25Ω, IAS = -5.4A.  
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.  
ꢀ When mounted on 1 inch square copper board, t<10 sec  
2
www.irf.com  
IRF7207  
100  
10  
1
100  
10  
1
VGS  
VGS  
TOP  
-7.00V  
-5.00V  
-4.50V  
-3.50V  
-3.00V  
-2.70V  
-2.50V  
TOP  
-7.00V  
-5.00V  
-4.50V  
-3.50V  
-3.00V  
-2.70V  
-2.50V  
BOTTOM -2.25V  
BOTTOM -2.25V  
-2.25V  
-2.25V  
20µs PULSE WIDTH  
°
T = 150 C  
J
20µs PULSE WIDTH  
°
T = 25 C  
J
0.1  
1
10  
0.1  
1
10  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
100  
2.0  
-5.4A  
=
I
D
°
T = 25 C  
J
1.5  
1.0  
0.5  
0.0  
°
T = 150 C  
J
10  
V
= -10V  
DS  
-4.5V  
=
V
GS  
20µs PULSE WIDTH  
1
2.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
3.0  
4.0  
5.0  
6.0  
°
T , Junction Temperature ( C)  
J
-V , Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRF7207  
10  
8
1600  
I
D
= -5.4A  
V
= 0V,  
f = 1MHz  
C
GS  
C
= C + C  
SHORTED  
ds  
iss  
gs  
gd ,  
gd  
V
=-10V  
C
= C  
gd  
DS  
rss  
C
= C + C  
oss  
ds  
1200  
800  
400  
0
6
C
iss  
4
C
oss  
rss  
C
2
FOR TEST CIRCUIT  
SEE FIGURE 13  
0
1
10  
100  
0
5
10  
15  
20  
25  
30  
-V , Drain-to-Source Voltage (V)  
DS  
Q
, Total Gate Charge (nC)  
G
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
100  
10  
1
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
°
T = 150 C  
J
100us  
1ms  
°
T = 25 C  
J
°
10ms  
T = 25 C  
A
J
°
T = 150 C  
V
= 0 V  
GS  
1.2  
Single Pulse  
0.1  
0.4  
0.6  
0.7  
0.9  
1.1  
1.4  
1
10  
100  
-V ,Source-to-Drain Voltage (V)  
SD  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRF7207  
400  
300  
200  
100  
0
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I
D
TOP  
-2.4A  
-4.3A  
BOTTOM -5.4A  
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
°
T , Case Temperature ( C)  
C
°
Starting T , Junction Temperature ( C)  
J
Fig 9. Maximum Drain Current Vs.  
Fig 10. Maximum Avalanche Energy  
Case Temperature  
Vs. Drain Current  
100  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
P
DM  
0.02  
0.01  
t
1
t
2
Notes:  
SINGLE PULSE  
(THERMAL RESPONSE)  
1. Duty factor D =  
t / t  
1 2  
2. Peak T =P  
J
x Z  
+ T  
10  
DM  
thJA  
A
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRF7207  
SO-8 Package Details  
INC HES  
MILLIMETER S  
DIM  
D
MIN  
M AX  
.0688  
.0098  
.018  
MIN  
1.35  
0.10  
0.36  
0.19  
4.80  
3.81  
MAX  
1.75  
0.25  
0.46  
0.25  
4.98  
3.99  
5
-
7
2
B -  
A
.0532  
.0040  
.014  
A1  
B
8
1
6
3
5
4
5
H
E
A
C
D
E
.0075  
.189  
.0098  
.196  
0 .25 (.01 0)  
M
A M  
-
-
.150  
.157  
e
e
.050 BASIC  
.025 BASIC  
1.27 BASIC  
K
x 4 5°  
6X  
e1  
e1  
H
K
0.635 BASIC  
.2284  
.011  
0.16  
0°  
.2440  
5.80  
0.28  
0.41  
0°  
6.20  
0.48  
1.27  
8°  
θ
A
.019  
.050  
8°  
- C  
-
0.1 0 (.0 04 )  
6
C
8 X  
L
8X  
L
A 1  
B
8 X  
θ
0.2 5 (.010 )  
M
C A S B S  
R E C O M M E N D E D F O O T P R IN T  
N O T E S :  
0.7 2 (.028  
8X  
)
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .  
2. C O N T R O LL IN G D IM E N S IO N : IN C H .  
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).  
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .  
6.46 ( .2 55  
)
1.78 (.0 70 )  
8X  
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S  
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).  
D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O  
A
S U B S TR A TE ..  
6
1 .27  
(
.05 0  
)
3 X  
Part Marking  
6
www.irf.com  
IRF7207  
Tape and Reel  
T E R M IN A L N U M B E R  
1
12.3 ( .48 4  
11.7 ( .46 1  
)
)
8.1 ( .31 8  
7.9 ( .31 2  
)
)
FE E D D IR E C TIO N  
N O TE S :  
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .  
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).  
3 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -5 4 1.  
33 0.00  
(12.992)  
M AX .  
14.40 ( .5 66  
12.40 ( .4 88  
)
)
N O TE S  
1. C O N T R O LLIN G D IM E N S IO N : M ILLIM E T ER .  
2. O U TL IN E C O N FO R M S T O E IA -481 E IA -541.  
:
&
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000  
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111  
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086  
IR SOUTHEAST ASIA: 1KimSengPromenade, GreatWorldCityWestTower, 13-11, Singapore237994Tel:++ 65 (0)8384630  
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936  
Data and specifications subject to change without notice. 6/00  
www.irf.com  
7

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