IRF7314Q [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRF7314Q |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总9页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -93945A
IRF7314Q
HEXFET® Power MOSFET
Typical Applications
VDSS
-20V
RDS(on) max
0.058@VGS = -4.5V
ID
-5.2A
• Anti-lock Braking Systems (ABS)
• Electronic Fuel Injection
• Air bag
0.098@VGS = -2.7V -4.42A
Benefits
• Advanced Process Technology
• Dual P-Channel MOSFET
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Repetitive Avalanche Allowed up to Tjmax
• Automotive [Q101] Qualified
1
2
8
S1
G 1
D1
7
D 1
3
4
6
S2
D2
5
G 2
D 2
SO-8
Top V iew
Description
Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.
The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual
MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-Source Voltage
-20
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
-5.2
-4.3
A
-43
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.4
W
W
1.7
16
± 12
mW/°C
V
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
Avalanche Current
610
mJ
A
IAR
-5.2
EAR
Repetitive Avalanche Energy
Junction and Storage Temperature Range
See Fig.14, 15, 16
-55 to + 175
mJ
°C
TJ , TSTG
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
62.5
°C/W
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1
03/20/02
IRF7314Q
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.009 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.049 0.058
––– 0.082 0.098
-0.7 ––– –––
6.8 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -5.2A
VGS = -2.7V, ID = -4.42A
VDS = VGS, ID = -250µA
VDS = 10V, ID = -5.2A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 150°C
VGS = -12V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 19
––– 2.1 3.2
––– 9.3 14
29
ID = -5.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
pF
VDS = -16V
VGS = -4.5V
––– 18 –––
––– 26 –––
––– 41 –––
––– 38 –––
––– 913 –––
––– 512 –––
––– 260 –––
VDD = -10V
ID = -1.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = -4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = -15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– -3.0
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
–––
-43
–––
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.0
V
TJ = 25°C, IS = -3.0A, VGS = 0V
TJ = 25°C, IF = -3.0A
––– 44
––– 54
66
81
ns
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t ≤ 10sec.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 45mH
RG = 25Ω, IAS = -5.2A.
2
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IRF7314Q
100
10
1
100
10
VGS
VGS
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
TOP
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
TOP
BOTTOM -1.5V
BOTTOM -1.5V
1
-1.5V
-1.5V
0.1
0.01
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
10
1
-5.2A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 175 C
J
V
= -15V
DS
V
= -4.5V
20µs PULSE WIDTH
GS
0.1
1.0
2.0
3.0
4.0 5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7314Q
2000
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= -5.2A
GS
C
= C + C
V
=-16V
iss
gs
gd
gd ,
DS
C
= C
rss
C
= C + C
1600
1200
800
400
0
oss
ds
gd
6
C
iss
4
C
oss
2
C
rss
0
0
8
16
24
32
40
1
10
100
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10
100us
1ms
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.1
0.5
0.8
1.1
1.4
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7314Q
6.0
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7314Q
0.080
0.070
0.060
0.050
0.040
0.030
0.430
0.330
0.230
0.130
0.030
VGS = -2.7V
I
= -5.2A
D
VGS = -4.5V
2.0
4.0
6.0
8.0
0
10
20
30
40
50
-V
GS,
Gate -to -Source Voltage (V)
-I , Drain Current ( A )
D
Fig 11. Typical On-Resistance Vs.
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Q
G
10 V
1600
1200
800
400
0
I
D
Q
Q
GD
GS
TOP
-2.1A
-4.4A
-5.2A
V
G
BOTTOM
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
25
50
75
100
125
150
175
V
GS
°
Starting Tj, Junction Temperature
(
C)
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Fig 13b. Gate Charge Test Circuit
6
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IRF7314Q
100
10
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
∆
avalanche losses
1
0.05
0.10
0.1
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
700
600
500
400
300
200
100
0
TOP
BOTTOM 10% Duty Cycle
= -5.2A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2∆T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
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IRF7314Q
SO-8 Package Details
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
.050 BAS IC
1.27 BAS IC
0.635 BAS IC
e 1 .025 BAS IC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
Part Marking
8
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IRF7314Q
Tape and Reel
T E R M IN A L N U M B E R
1
12.3 ( .48 4
11.7 ( .46 1
)
)
8.1 ( .31 8
7.9 ( .31 2
)
)
FE E D D IR E C TIO N
N O TE S :
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.00
(12.992)
M AX .
14.40 ( .5 66
12.40 ( .4 88
)
)
N O TE S
1. C O N T R O LLIN G D IM E N S IO N : M ILLIM E T ER .
2. O U TL IN E C O N FO R M S T O E IA -481 E IA -541.
:
&
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/02
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9
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