IRF7379QPBF [INFINEON]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET


型号：	IRF7379QPBF
厂家：	Infineon
描述：	HEXFET㈢ Power MOSFET HEXFET㈢功率MOSFET
文件：	总10页 (文件大小：245K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 96111

IRF7379QPbF

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

Dual N and P Channel MOSFET

SurfaceMount

Available in Tape & Reel

150°COperatingTemperature

Automotive [Q101] Qualified

Lead-Free

N-CHANNEL MOSFET

N-Ch P-Ch

V_DSS30V

-30V

P-CHANNEL MOSFET

R_DS(on)0.045Ω 0.090Ω

Top View

Description

Specifically designed for Automotive applications, these

HEXFET^®Power MOSFET's in a Dual SO-8 package utilize

the lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET's are a

150°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating. These

benefits combine to make this design an extremely efficient

and reliable device for use in Automotive applications and

a wide variety of other applications.

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it

ideal in a variety of power applications. This dual, surface

mount SO-8 can dramatically reduce board space and is

also available in Tape & Reel.

SO-8

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

-30

V_SD

Drain-to-Source Voltage

5.8

4.6

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

-4.3

-3.4

-34

P_D@T_A= 25°C

2.5

W/°C

Linear Derating Factor

0.02

± 20

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

5.0

-5.0

V/ns

°C

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance Ratings

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

www.irf.com

07/23/07

IRF7379QPbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

N-Ch 30

P-Ch -30

—

V_GS= 0V, I_D= 250µA

V_GS= 0V, I_D= -250µA

Reference to 25°C, I_D= 1mA

Reference to 25°C, I_D= -1mA

V_(BR)DSS

Drain-to-SourceBreakdownVoltage

N-Ch

P-Ch

—

0.032

-0.037

0.038 0.045

0.055 0.075

0.070 0.090

0.130 0.180

—

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

V/°C

V_GS= 10V, I_D= 5.8A

_GS= 4.5V, I_D= 4.9A

N-Ch

P-Ch

R_DS(ON)

Static Drain-to-Source On-Resistance

Ω

V_GS= -10V, I_D=- 4.3A

V_GS= -4.5V, I_D=- 3.7A

V_DS= V_GS, I_D= 250µA

V_DS= V_GS, I_D= -250µA

V_DS= 15V, I_D= 2.4A

V_DS= -24V, I_D= -1.8A

N-Ch 1.0

P-Ch -1.0

N-Ch 5.2

P-Ch 2.5

—

V_GS(th)

g_fs

Gate Threshold Voltage

ForwardTransconductance

—

N-Ch

P-Ch

N-Ch

P-Ch

—

1.0

-1.0

-25

±100

2.9

7.9

9.0

—

_DS= 24 V, V_GS= 0V

V_DS= -24V, V_GS= 0V

V_DS= 24 V, V_GS= 0V, T_J= 125°C

I_DSS

Drain-to-SourceLeakageCurrent

µA

V_DS= -24V, V_GS= 0V, T_J= 125°C

V_GS= ± 20V

I_GSS

Q_g

Gate-to-SourceForwardLeakage

Total Gate Charge

N-P ––

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-P

—

N-Channel

I_D= 2.4A, V_DS= 24V, V_GS= 10V

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-SourceCharge

Gate-to-Drain("Miller")Charge

Turn-OnDelayTime

RiseTime

—

P-Channel

I_D= -1.8A, V_DS= -24V, V_GS= -10V

6.8

7.7

4.0

6.0

520

440

180

200

N-Channel

V_DD= 15V, I_D= 2.4A, R_G= 6.0Ω,

R_D= 6.2Ω

t_d(off)

t_f

Turn-OffDelayTime

FallTime

P-Channel

V_DD= -15V, I_D= -1.8A, R_G= 6.0Ω,

R_D= 8.2Ω

L_D

L_S

Internal Drain Inductace

Internal Source Inductance

Between lead, 6mm (0.25in.) from

package and center of die contact

N-P

—

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

C_iss

C_oss

C_rss

Input Capacitance

N-Channel

V_GS= 0V, V_DS= 25V, ƒ = 1.0MHz

Output Capacitance

P-Channel

V_GS= 0V, V_DS= -25V, ƒ = 1.0MHz

Reverse Transfer Capacitance

Source-Drain Ratings and Characteristics

Parameter

N-Ch

Min. Typ. Max. Units

Conditions

—

3.1

-3.1

-34

1.0

-1.0

I_S

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

DiodeForwardVoltage

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

I_SM

V_SD

T_J= 25°C, I_S= 1.8A, V_GS= 0V

T_J= 25°C, I_S= -1.8A, V_GS= 0V

N-Channel

t_rr

ReverseRecoveryTime

T_J= 25°C, I_F= 2.4A, di/dt = 100A/µs

P-Channel

Q_rr

ReverseRecoveryCharge

T_J= 25°C, I_F= -1.8A, di/dt = -100A/µs

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature. ( See fig. 10 )

N-Channel I_SD≤ 2.4A, di/dt ≤ 73A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

P-Channel I_SD≤ -1.8A, di/dt ≤ 90A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

Surface mounted on FR-4 board, t ≤ 10sec.

www.irf.com

IRF7379QPbF

N-Channel

1000

100

VGS

15V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

4.5V

20µs PULSE WIDTH

= 25°C

= 150°C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

T = 25°C

T = 150°C

T = 25°C

V_DS= 15V

20µs PULSE WIDTH

= 0V

0.1

₁₀A

0.0

0.5

1.0

1.5

2.0

2.5

, Source-to-Drain Voltage (V)

V_GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

www.irf.com

IRF7379QPbF

N-Channel

2.0

0.20

= 4.0A

0.16

0.12

0.08

0.04

0.00

1.5

1.0

0.5

0.0

VGS = 4.5V

VGS = 10V

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160

, Drain Current (A)

T , Junction Temperature (°C)

Fig 6. Typical On-Resistance Vs. Drain

Fig 5. Normalized On-Resistance

Current

Vs.Temperature

0.08

0.07

0.06

0.05

0.04

0.03

ID = 5.8A

, Gate-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate

Voltage

www.irf.com

IRF7379QPbF

N-Channel

1000

800

600

400

200

= 0V,

f = 1MHz

= 2.4A

= 24V

iss

rss

oss

= C + C

SHORTED

= C

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 11

100

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 8. Typical Capacitance Vs.

Fig 9. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

Notes:

1. Duty factor D =

2. Peak T =P

SINGLE PULSE

t / t

x Z

(THERMAL RESPONSE)

+ T

thJA

0.1

0.00001

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com

IRF7379QPbF

P-Channel

100

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

TOP

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

TOP

BOTTOM - 4.5V

-4.5V

20µs PULSE WIDTH

= 25°C

= 150°C

100

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 11. Typical Output Characteristics

Fig 12. Typical Output Characteristics

100

T_J= 25°C

T_J= 150°C

T = 150°C

T = 25°C

V_DS= -15V

20µs PULSE WIDTH

= 0V

0.1

₁₀A

0.0

0.3

0.6

0.9

1.2

1.5

-V_GS, Gate-to-Source Voltage (V)

-V , Source-to-Drain Voltage (V)

Fig 13. Typical Transfer Characteristics

Fig 14. Typical Source-Drain Diode

Forward Voltage

www.irf.com

IRF7379QPbF

P-Channel

0.50

0.40

0.30

0.20

0.10

0.00

2.0

1.5

1.0

0.5

0.0

= -3.0A

VGS = -4.5V

VGS = -10V

= -10V

-60 -40 -20

20 40 60 80 100 120 140 160

-I , Drain Current (A)

, Junction Temperature (°C)

Fig 16. Typical On-Resistance Vs. Drain

Fig 15. Normalized On-Resistance

Current

Vs.Temperature

0.16

0.14

0.12

0.10

0.08

0.06

ID = -4.3A

-V

, Gate-to-Source Voltage (V)

Fig 17. Typical On-Resistance Vs. Gate

Voltage

www.irf.com

IRF7379QPbF

P-Channel

1000

= -3.0A

= -24V

= 0V,

f = 1MHz

iss

rss

oss

= C + C

SHORTED

= C

= C + C

800

600

400

200

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 22

100

Q , Total Gate Charge (nC)

-V , Drain-to-Source Voltage (V)

Fig 19. Typical Gate Charge Vs.

Fig 18. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

Notes:

1. Duty factor D =

2. Peak T =P

SINGLE PULSE

t / t

x Z

(THERMAL RESPONSE)

+ T

thJA

0.1

0.00001

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com

IRF7379QPbF

SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

IRF7379QPbF

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.07/2007

www.irf.com

IRF7379QPBF [INFINEON]

相关型号：

IRF7379QTRPBF

IRF7379TR

IRF737LC

IRF737LC-002

IRF737LC-002PBF

IRF737LC-003

IRF737LC-003PBF

IRF737LC-004

IRF737LC-004PBF

IRF737LC-005

IRF737LC-005PBF

IRF737LC-006